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IRLR7821TRPBF
30V Single N-Channel HEXFET Power MOSFET in a D-Pak package
PD - 95091 B
IRLR7821PbF
IlRLU7821PbF
HEXFET® Power MOSFET
International
TOR Rectifier
Applications
o High Frequency Synchronous Buck Voss RDS(on) max titg
Converters for Computer Processor Power 30V 10mf2 10nC
q High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use 1ti,aiii,it, 4iit
o Lead-Free "tri/ l, _
Benefits
. Very Low RDS(on) at 4.5V l/ss D-Pak l-Pak
o Ultra-Low Gate Impedance IRLR7821PbF IRLU7821PbF
0 Fully Characterized Avalanche Voltage
and Current
Absolute Maximum Ratings
Parameter Max. Units
Vos Drain-to-Source Voltage 30 V
Vas Gate-to-Source Voltage t 20
ID @ To = 25°C Continuous Drain Current, Vss © 10V 65©
ID @ TC = 100°C Continuous Drain Current, Ves © 10V 47© A
'DM Pulsed Drain Current CO 260
PD @Tc = 25°C Maximum Power Dissipation 75 W
PD @Tc = 100°C Maximum Power Dissipation 37.5
Linear Derating Factor 0.50 W/°C
TJ Operating Junction and -55 to + 175 'C
TSTG Storage Temperature Range
Thermal Resistance
Parameter Typ. Max. Units
ROJC Junction-to-Case - 2.0
ROJA Junction-to-Ambient (PCB Mount)6) - 50 °C/W
ROJA Junction-to-Ambient - 110
Notes OD through S are on page 11
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IRLR/U7821PbF
International
Static © T J = 25''C (unless otherwise specified) TOR Rectifier
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 30 - - V l/ss = 0V, ID = 250pA
ABVDSS/ATJ Breakdown Voltage Temp. Coefficient -- 23 - mV/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance - 7.5 10 mn Vss = 10V, b = 15A ©
- 9.5 12.5 Ves = 4.5V, ID = 12A Cr)
VGS(lh) Gate Threshold Voltage 1.0 - - V Vrss = Vss, ID = 250pA
AVGS(th) Gate Threshold Voltage Coefficient - -5.3 - mV/°C
loss Drain-to-Source Leakage Current - - 1.0 pA l/os = 24V, Vas = 0V
-- -- 150 Vrss = 24V, Vss = 0V, To = 125°C
less Gate-to-Source Forward Leakage - - 100 nA Ves = 20V
Gate-to-Source Reverse Leakage - - -100 l/ss = -20V
gfs Forward Transconductance 46 - - S Vrss = 15V, ID = 12A
ch Total Gate Charge - 10 14
Qgs1 Pre-Vth Gate-to-Source Charge - 2.0 - Vos = 16V
0952 Post-Vth Gate-to-Source Charge - 1.2 - nC Vss = 4.5V
di Gate-to-Drain Charge - 2.5 - lo = 12A
ngdr Gate Charge Overdrive - 4.3 - See Fig. 16
st Switch Charge (0952 + the) _ 3.7 -
Qoss Output Charge - 8.5 - nC VDS = 16V, Vss = 0V
tum.) Turn-On Delay Time - 11 - vDD = 15V, Vas = 4.5V ©
t, Rise Time - 4.2 - ID = 12A
td(off) Turn-Off Delay Time -- 10 - ns Clamped Inductive Load
t, Fall Time - 3.2 -
Ciss Input Capacitance - 1030 - Vss = 0V
Coss Output Capacitance - 360 - pF VDS = 15V
Crss Reverse Transfer Capacitance - 120 - f = 1.0MHz
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy©© - 230 mJ
|AR Avalanche Current CD - 12 A
EAR Repetitive Avalanche Energy CO - 7.5 m J
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 65© MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - - 260 integral reverse G
(Body Diode) coco p-n junction diode. S
Vso Diode Forward Voltage -- -- 1.0 v TJ = 25°C, Is = 12A, VGS = OV ©
in Reverse Recovery Time - 26 38 ns TJ = 25°C, IF = 12A, VDD = 15V
Q,, Reverse Recovery Charge - 15 23 nC di/dt = 100A/ps ©
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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