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30V Single N-Channel HEXFET Power MOSFET in a D-Pak package
International
TOR Rectifier
Applications
o High Frequency Synchronous Buck
Converters for Computer Processor Power
q High Frequency Isolated DC-DC
PD - 94538B
IRLR7821
IRLU7821
HEXFET' Power MOSFET
Voss RDS(on) max 09
30V 10mf2 10nC
Converters with Synchronous Rectification
for Telecom and Industrial Use xtiiir, 4iitt
Benefits _ l l, _
q Very Low RDS(on) at 4.5V VGS
o Ultra-Low Gate Impedance D P k I P k
. - a - a
. Fully Characterized Avalanche Voltage IRLR7821 IRLU7821
and Current
Absolute Maximum Ratings
Parameter Max. Units
Vos Drain-to-Source Voltage 30 V
VGS Gate-to-Source Voltage , 20
ID @ TC = 25°C Continuous Drain Current, I/ss @ 10V 650D
ID @ Tc = 100''C Continuous Drain Current, I/ss @ 10V 47@ A
IDM Pulsed Drain Current co 260
Po @Tc = 25°C Maximum Power Dissipation s 75 W
Pro @Tc = 100°C Maximum Power Dissipation © 37.5
Linear Derating Factor 0.50 W/°C
T J Operating Junction and -55 to + 175 "C
TSTG Storage Temperature Range
Thermal Resistance
Parameter Typ. Max. Units
RoJc Junction-to-Case - 2.0
Ross Junction-to-Ambient (PCB Mount) © - 50 ''C/W
ROJA Junction-to-Ambient - 110
Notes C) through s are on page 11
4/ 5/ 04
IRLR/U7821
International
Static @ T, = 25°C (unless otherwise specified) TOR Rectifier
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 30 - - V Vss = 0V, ID = 250pA
ABVDSS/ATJ Breakdown Voltage Temp. Coemcient - 23 - mV/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance - 7.5 10 mn I/ss = 10V, ID = 15A ©
- 9.5 12.5 Vss = 4.5V, ID = 12A ©
Vesan) Gate Threshold Voltage 1.0 - - V Ws = VGS, b = 250pA
AVGsan) Gate Threshold Voltage Coefficient - -5.3 - mV/°C
loss Drain-to-Source Leakage Current - - 1.0 pA Vos = 24V, VGS = 0V
- - 150 Ws = 24V, Vss = 0V, T: = 125°C
less Gate-to-Source Forward Leakage - - 100 nA l/ss = 20V
Gate-to-Source Reverse Leakage - - -100 Vss = -20V
gts Forward Transconductance 46 - - S Ws = 15V, ID = 12A
Qg Total Gate Charge - 10 14
0951 Pre-Vth Gate-to-Source Charge - 2.0 - Vos = 16V
Qgs2 Post-Vth Gate-to-Source Charge - 1.2 - nC VGS = 4.5V
an Gate-to-Drain Charge - 2.5 - ID = 12A
ngdr Gate Charge Overdrive - 4.3 - See Fig. 16
st Switch Charge (0952 + di) _ 3.7 -
Qoss Output Charge - 8.5 - nC Vros = 16V, VGS = 0V
tum) Turn-On Delay Time - 11 - VDD = 15V, Vss = 4.5V ©
t, Rise Time - 4.2 - ID = 12A
tum) Turn-Off Delay Time - 10 - ns Clamped Inductive Load
h Fall Time - 3.2 -
Ciss Input Capacitance - 1030 - N/ss = 0V
Cass Output Capacitance - 360 - pF Vros = 15V
Crss Reverse Transfer Capacitance - 120 - f = 1.0MHz
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy©© - 230 mJ
|AR Avalanche Current CO _ 12 A
EAR Repetitive Avalanche Energy CD - 7.5 mJ
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - 65© MOSFET symbol D
(Body Diode) A showing the
G, Pulsed Source Current - - 260 integral reverse G
(Body Diode) COO) p-n iunction diode. s
Vso Diode Forward Voltage - - 1.0 v T J = 25°C, IS = 12A, VGS = 0v ©
tn Reverse Recovery Time - 26 38 ns T J = 25°C, IF = 12A, VDD = 15V
ar, Reverse Recovery Charge - 15 23 nC di/dt = 100A/ps Cr)
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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