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IRLR7807ZTR
Leaded 30V Single N-Channel HEXFET Power MOSFET in a D-Pak package
International
TOR Rectifier
Applications
0 High Frequency Synchronous Buck
PD - 94662
IRLR7807Z
IRLU7807Z
HEXFET6 Power MOSFET
Converters for Computer Processor Power VDSS RDS(on) max Qg (typ.)
Benefits 30V 13.8mQ 7.0nC
0 Very Low RDS(on) at 4.5V VGS
o Ultra-Low Gate Impedance
. Fully Characterized Avalanche Voltage
and Current iii)
D-Pak I-Pak
|RLR7807Z IRLU7807Z
Absolute Maximum Ratings
Parameter Max. Units
I/os Drain-to-Source Voltage 30 V
VGS Gate-to-Source Voltage d: 20
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 43(ii)
ID @ Tc = 100°C Continuous Drain Current, VGS @ 10V 30C4) A
IDM Pulsed Drain Current OD 170
Pro @Tc = 25°C Maximum Power Dissipation s 40 W
Po @Tc = 100°C Maximum Power Dissipation S 20
Linear Derating Factor 0.27 W/°C
To Operating Junction and -55 to + 175 ''C
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Thermal Resistance
Notes C)
Parameter
Junction-to-Case
Junction-to-Ambient
through (S) are on page 11
4/7/03
IRLR/U7807Z International
. . . . TOR ilectifier
Static @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 30 - - V Vss = 0V, ID = 250pA
ABI/oss/AT: Breakdown Voltage Temp. Coemcient - 23 - mV/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance - 11 13.8 mg VGS = 10V, ID = 15A ©
- 14.5 18.2 Vss = 4.5V, ID = 12A ©
VGS(lh) Gate Threshold Voltage 1.35 1.8 2.25 V Vos = VGS, ID = 250pA
AVGS(th)/ATJ Gate Threshold Voltage Coefficient .- -4.5 - mV/°C
Iross Drain-to-Source Leakage Current - - 1.0 pA Vos = 24V, I/ss = 0V
- - 150 Vos = 24V, VGS = 0V, TJ = 125°C
less Gate-to-Source Forward Leakage - - 100 nA VGS = 20V
Gate-to-Source Reverse Leakage - - -100 Vss = -20V
gfs Fowvard Transconductance 51 - - S Vos = 15V, ID = 12A
Q, Total Gate Charge - 7.0 11
0951 Pre-Vth Gate-to-Source Charge - 1.8 - Vos = 15V
Qgs2 Post-Vth Gate-to-Source Charge - 0.7 - nC Vss = 4.5V
qu Gate-to-Drain Charge - 2.7 - ID = 12A
ngdr Gate Charge Overdrive - 1.8 - See Fig. 16
Qsw Switch Charge (Qgs2 + di) - 3.4 -
Qoss Output Charge - 4.0 - nC Vos = 15V, VGS = 0V
tum) Turn-On Delay Time - 7.1 - VDD = 15V, I/ss = 4.51/©
t, Rise Time - 28 - ID = 12A
tam) Turn-Off Delay Time - 9.8 - ns Clamped Inductive Load
tr Fall Time - 3.5 -
Ciss Input Capacitance - 780 - Vss = 0V
Coss Output Capacitance - 180 - pF Vos = 15V
Crss Reverse Transfer Capacitance - 100 - f = 1.0MHZ
Avalanche Characteristics
Parameter Max.
E AS ng va 28
IAR va 1 2
EAR va 4.0
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 43© MOSFET symbol C)
(Body Diode) A showing the if
ISM Pulsed Source Current - - 170 integral reverse 6
(Body Diode) C) p-n junction diode. cl
Vso Diode Forward Voltage - - 1.0 V TJ = 25''C, IS = 12A, VGS = 0V ©
trr Reverse Recovery Time - 23 35 ns T J = 25°C, IF = 12A, VDD = 15V
er Reverse Recovery Charge - 14 21 nC di/dt = 100A/ps ©
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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