IRLR7807ZPBF ,30V Single N-Channel HEXFET Power MOSFET in a D-Pak packageIRLR7807ZPbFIRLU7807ZPbF
IRLR7807ZPBF ,30V Single N-Channel HEXFET Power MOSFET in a D-Pak packageApplicationsHEXFET Power MOSFET High Frequency Synchronous BuckV R max Qg (typ.) Converters fo ..
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IRLR7807ZPBF-IRLR7807ZTRRPBF
30V Single N-Channel HEXFET Power MOSFET in a D-Pak package
International
ISER Rectifier
PD - 95777A
lRLR7807ZPbF
IRLU7807ZPbF
Applications HEXFET© Power MOSFET
o High Frequency Synchronous Buck
Converters for Computer Processor Power VDSS RDS(on) max 09 (typ.)
o Lead-Free
30V 13.8mQ 7.0nC
Benefits
. Very Low RDS(on) at 4.5V VGS tiiiit 'git
Cd _ '
. Ultra-Low Gate Impedance 'tr l, Rls' V
o Fully Characterized Avalanche Voltage l,
and Current
D-Pak I-Pak
IRLR7807Z IRLU7807Z
Absolute Maximum Ratings
Parameter Max. Units
Vos Drain-to-Source Voltage 30 V
VGS Gate-to-Source Voltage * 20
ID @ To = 25°C Continuous Drain Current, N/ss @ 10V 43©
ID @ Tc = 100°C Continuous Drain Current, VGS @ 10V 30© A
IDM Pulsed Drain Current CO 170
Pro @Tc = 25°C Maximum Power Dissipation s 40 W
PD @Tc = 100°C Maximum Power Dissipation s 20
Linear Derating Factor 0.27 W/°C
To Operating Junction and -55 to + 175 "C
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Thermal Resistance
Parameter Typ. Max. Units
RoJC Junction-to-Case - 3.75
ROJA Junction-to-Ambient (PCB Mount) s - 50 "C/W
ROJA Junction-to-Ambient - 110
Notes OD through S are on page 11
1
12/8/04
|RLR/U7807ZPbF
International
TOR Rectifier
Static @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 30 - - V Vss = 0V, ID = 250pA
ABVoss/ATJ Breakdown Voltage Temp. Coemcient - 23 - mV/°C Reference to 25°C, ID = 1 mA
RDS(on) Static Drain-to-Source On-Resistance - 11 13.8 mg VGS = 10V, b = 15A ©
- 14.5 18.2 Vss = 4.5V, ID = 12A OD
VGS(th) Gate Threshold Voltage 1.35 1.8 2.25 V Vos = VGS, ID = 250pA
AVGS(th)/ATJ Gate Threshold Voltage Coefficient - -4.5 - mV/°C
loss Drain-to-Source Leakage Current - - 1.0 PA Ws = 24V, VGS = 0V
- - 150 Vos = 24V, N/ss = 0V, T: = 125°C
less Gate-to-Source Forward Leakage - - 100 nA VGS = 20V
Gate-to-Source Reverse Leakage - - -100 Vss = -20V
gfs Forward Transconductance 51 - - S Vos = 15V, ID = 12A
Qg Total Gate Charge - 7.0 11
Qgs1 Pre-Vth Gate-to-Source Charge - 1.8 - Vos = 15V
Qgs2 Post-Vth Gate-to-Source Charge - 0.7 - nC VGS = 4.5V
an Gate-to-Drain Charge - 2.7 - ID = 12A
ngdr Gate Charge Overdrive - 1.8 - See Fig. 16
Qsw Switch Charge (Qgs2 + di) - 3.4 -
Qoss Output Charge - 4.0 - nC Vos = 15V, VGS = 0V
td(on) Turn-On Delay Time - 7.1 - VDD = 15V, VGs = 4.5V®
t, Rise Time - 28 - ID = 12A
td(off) Turn-Off Delay Time - 9.8 - ns Clamped Inductive Load
tr Fall Time - 3.5 -
Ciss Input Capacitance - 780 - VGS = 0V
Coss Output Capacitance - 180 - pF Vos = 15V
Crss Reverse Transfer Capacitance - 100 - f = 1.0MHz
Avalanche Characteristics
Parameter
EAS val nergy
epe va
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 43© MOSFET symbol C)
(Body Diode) A showing the L,-a,
ISM Pulsed Source Current - - 170 integral reverse G (tL',
(Body Diode) C) p-n junction diode. cl
Vso Diode Forward Voltage - - 1.0 V To = 25°C, Is = 12A, VGS = 0V ©
in Reverse Recovery Time - 23 35 ns T J = 25°C, IF = 12A, VDD = 15V
er Reverse Recovery Charge - 14 21 n0 di/dt = 100A/ps ©
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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