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IRLR4343
55V Single N-Channel HEXFET Power MOSFET in a D-Pak package
PD - 95851
lniemoiiqhol DIGITAL AUDIO MOSFET IRLR4343
TOR Rectifier IRLU4343
IRLU4343-701
Features
q Advanced Process Technology
. Key Parameters Optimized for Class-D Audio Key Parameters
Amplifier Applications VDS 55 V
. Low RDSON for Improved Efficiency =
. Low Q9 and st for Better THD and Improved RDS(ON) typ. @ l/ss - 10V 42 mg
Efficiency RDS(ON) typ. @ I/ss - 4.5V 57 m9
. Low Qrr for Better THD and Lower EMI Qg typ. 28 nC
. 175°C Operating Junction Temperature for Tu max 175 "C
Ruggedness
o Repetitive Avalanche Capability for Robustness and
Reliability
. Multiple Package Options D 4is
‘ " D-Pak l-Pak
G IRLR4343 IRLU4343
I-Pak Leadform 701
S IRLU4343-701
Refer to page 10 for package outline
Description
This Digital Audio HEXFETO is specifically designed for Class-D audio amplifier applications. This MosFET utilizes the latest
processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery
and internal Gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD
and EMI. Additional features of this MosFET are 175°C operating junction temperature and repetitive avalanche capability.
These features combine to make this MosFET a highly efficient, robust and reliable device for Class-D audio amplifier
applications.
Absolute Maximum Ratings
Parameter Max. Units
Vos Drain-to-Source Voltage 55 V
I/ss Gate-to-Source Voltage :20
ID @ Tc = 25''C Continuous Drain Current, VGS @ 10V 26 A
lo @ Tc = 100°C Continuous Drain Current, VGS @ 10V 19
G, Pulsed Drain Current co 80
PD @Tc = 25°C Power Dissipation 79 W
PD @Tc = 100°C Power Dissipation 39
Linear Derating Factor 0.53 W/°C
Tu Operating Junction and -40 to + 175 "C
TSTG Storage Temperature Range
Clamping Pressure © - N
Thermal Resistance
Parameter Typ. Max. Units
Ru: Junction-to-Case s - 1.9
RNA Junction-to-Ambient (PCB Mounted) sa - 50 °CNV
RQJA Junction-to-Ambient (free air) s - 110
Notes (O through are on page 10
1
3/26/04
IRLR/U4343 & IRLU4343-701 International
122R Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVDss Drain-to-Source Breakdown Voltage 55 - - V l/ss = 0V, ID = 250pA
ABVDSS/ATJ Breakdown Voltage Temp. Coefficient - 15 - mV/°C Reference to 25°C, lo = 1mA
R9303”) Static Drain-to-Source On-Resistance - 42 50 m9 N/ss = 10V, Irs = 4.7A ©
- 57 65 VGS = 4.5V, ID = 3.8A ©
VGS(th) Gate Threshold Voltage 1.0 - - v vDs = Vss, ID = 250pA
AVGS(.h)/ATJ Gate Threshold Voltage CoefMient - -4.4 - mV/°C
loss Drain-to-Source Leakage Current - - 2.0 pA VDs = 55V, Ves = 0V
- - 25 I/rs = 55V, VGS = 0V, Tu = 125°C
less Gate-to-Source Forward Leakage - - 100 nA N/ss = 20V
Gate-to-Source Reverse Leakage - - -1OO Veg = -20V
ge, Forward Transconductance 8.8 - - S Vos = 25V, '0 = 19A
Qg Total Gate Charge - 28 42 V05 = 44V
Qgs Pre-N/th Gate-to-Source Charge - 3.5 - l/ss = 10V
di Gate-to-Drain Charge - 9.5 - ID = 19A
ngdr Gate Charge Overdrive - 15 - See Fig. 6 and 19
tum“) Turn-On Delay Time - 5.7 - VDD = 28V, l/ss = 10V ©
t, Rise Time - 19 - Ir, = 19A
tum) Turn-Off Delay Time - 23 - ns RG = 2.59
t, Fall Time - 5.3 -
Ciss Input Capacitance - 740 - Ves = 0V
Coss Output Capacitance - 150 - pF VDs = 50V
Crss Reverse Transfer Capacitance - 59 - f = 1.0MHz, See Fig.5
Coss Effective Output Capacitance - 250 - Ves = 0V, Vos = 0V to -44V n
LD Internal Drain Inductance - 4.5 - Between lead, f \
nH 6mm (0.25in.) 05L
Ls Internal Source Inductance - 7.5 - from package "ir,
and center of die contact ©
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy© - 160 mJ
IAR Avalanche Current © See Fig. 14, 15, 17a, 17b A
EAR Repetitive Avalanche Energy © m]
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
Is @ Tc = 25°C Continuous Source Current - - 26 MOSFET symbol "r-----,"
(Body Diode) A showing the _,
ISM Pulsed Source Current - - 80 integral reverse G DJ
(Body Diode) G) p-n junction diode. e
VSD Diode Forward Voltage - - 1.2 V TJ = 25°C, ls = 19A, VGs = 0V ©
trr Reverse Recovery Time - 52 78 ns T: = 25''C, IF = 19A
Q,, Reverse Recovery Charge - 100 150 nC di/dt = 100A/ps ©
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