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IRLR3915
55V Single N-Channel HEXFET Power MOSFET in a D-Pak package
International
TOR Rectifier
AUTOMOTIVE MOSFET
PD - 94543
IRLR3915
IRLU3915
Features HEXFET® Power MOSFET
. Advanced Process Technology
. Ultra Low On-Resistance D
q 175°C Operating Temperature Vross = 55V
q Fast Switching
o Repetitive Avalanche Allowed up to Tjmax G A RDS(on) = 14mf2
Description
Specifically designed for Automotive applications, s ID = 30A
this HEXFET© Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance persilicon area. Additional features
of this product are a 175°C junction operating ' r», Iftrt
temperature, fast switching speed and improved "cl 'f't, 'Rtr1i.,,,
repetitive avalanche rating. These features com- l, 's
bine to make this design an extremely efficient and
reliable device for use in Automotive applications
and a wide variety of other applications. D-Pak I-Pak
IRLR3915 IRLU3915
Absolute Maximum Ratings
Parameter Max. Units
ID © Tc = 25°C Continuous Drain Current, Vss @ 10V (Silicon limited) 61
ID @ To = 100°C Continuous Drain Current, l/ss @ 10V (See Fig.9) 43 A
ID @ To = 25°C Continuous Drain Current, l/ss @ 10V (Package limited) 30
IBM Pulsed Drain Current (D 240
Pro ©Tc = 25°C Power Dissipation 120 W
Linear Derating Factor 0.77 W/°C
Vss Gate-to-Source Voltage 1 16 V
EAS Single Pulse Avalanche Energy© 200 mJ
EAS (6 sigma) Single Pulse Avalanche Energy Tested Value© 600
IAR Avalanche CurrentC0 See Fig.12a, 12b, 15, 16 A
EAR Repetitive Avalanche Energy© mJ
T J Operating Junction and -55 to + 175
TSTG Storage Temperature Range ''C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Thermal Resistance
Parameter Typ. Max. Units
RQJC Junction-to-Case - 1 .3
RQJA Junction-to-Ambient (PCB mount)© - 50 "C/W
ReJA Junction-to-Ambient- 1 10
HEXFET(R) is a registered trademark of International Rectifier.
1
09/06/02
IRLR/U3915
International
TOR Rectifier
Electrical Characteristics © Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55 - - V Vss = 0V, ID = 250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.057 - V/°C Reference to 25°C, ID = 1mA
Roswn) Static Drain-to-Source On-Resistance - 12 14 mn VGS = 10V, ID = 30A ©
- 14 17 Vai; = 5.0V, ID = 26A ©
VGsah) Gate Threshold Voltage 1.0 - 3.0 V Vrss = 10V, ID = 250pA
gfs Forward Transconductance 42 - - S Vros = 25V, ID = 30A
loss Drain-to-Source Leakage Current _ - 20 PA Vos = 55V, Vss = 0V
- - 250 Vos = 55V, VGS = 0V, TJ = 125°C
lass Gate-to-Source Forward Leakage - - 200 nA VGS = 16V
Gate-to-Source Reverse Leakage - - -200 I/ss = -16V
% Total Gate Charge - 61 92 ID = 30A
095 Gate-to-Source Charge - 9.0 14 nC Vros = 44V
di Gate-to-Drain ("Miller") Charge - 17 25 VGS = 10W9
td(ron) Turn-On Delay Time - 7.4 - ns VDD = 28V
t, Rise Time - 51 - ID = 30A
td(St) Turn-Off Delay Time - 83 - Rs = 8.59
if Fall Time - 100 - Veg = 10V (9
u, Internal Drain Inductance - 4.5 - Between lead, D
nH 6mm (0.25in.)
LS Internal Source Inductance - 7.5 - from package GQ )
and center of die contact s
Ciss Input Capacitance - 1870 - VGS = 0V
Coss Output Capacitance - 390 - Vos = 25V
Crss Reverse Transfer Capacitance - 74 - pF f = 1.0MHz, See Fig. 5
Coss Output Capacitance - 2380 - Vss = 0V, VDs = 1.0V, f = 1.0MHz
Cass Output Capacitance - 290 - VGS = 0V, VDS = 44V, f = 1.0MHz
Coss eff. Effective Output Capacitance s - 540 - Vas = 0V, Vos = 0V to 44V
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current MOSFET symbol D
(Body Diode) - - 61 A showing the
ISM Pulsed Source Current integral reverse G
(Body Diode) (D - - 240 p-n junction diode. s
l/sro Diode Forward Voltage - - 1.3 V To = 25°C, Is = 30A, l/ss = 0V (4)
trr Reverse Recovery Time - 62 93 ns Tu = 25°C, V = 30A, VDD = 25xikl V
Qrr Reverse Recovery Charge - 110 170 nC di/dt = 100A/ps ©
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by L3+LD)
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