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IRLR3802TRPBF
12V Single N-Channel HEXFET Power MOSFET in a D-Pak package
International
TOR Rectifier
PD - 95089A
IF1LR3802PbF
llRLU3802PbF
. . HEXFET@ Power MOSFET
Applications
0 High Frequency 3.3V and 5V input Point- Voss RDS(on) max 09
of-Load Synchronous Buck Converters
12V 8.5mQ 27nC
q Power Management for Netcom,
Computing and Portable Applications.
0 Lead-Free
Benefits 14iiit
o Ultra-Low Gate Impedance 'Rt'" l,
. Very Low RDS(on) l, , .
0 Fully Characterized Avalanche Voltage "
and Current D-Pak I-Pak
IRLR3802 IRLU3802
Absolute Maximum Ratings
Symbol Parameter Max. Units
Vos Drain-Source Voltage 12 V
VGS Gate-to-Source Voltage t 12 V
ID @ To = 25°C Continuous Drain Current, VGS @ 4.5V 84 (D
ID @ To = 100°C Continuous Drain Current, Vas @ 4.5V 60© A
IDM Pulsed Drain Current© 320
PD @Tc = 25°C Maximum Power Dissipation 88 W
PD @Tc = 100°C Maximum Power Dissipation 44 W
Linear Derating Factor 0.59 mW/°C
To , TSTG Junction and Storage Temperature Range -55 to + 175 ''C
Thermal Resistance
Parameter Typ. Max. Units
Fuuc Junction-to-Case - 1 .7
RNA Junction-to-Ambient (PCB mount)' -- 4O °C/W
ReJA Junction-to-Ambient - 1 10
Notes (O through 69 are on page 9
1
12/7/04
IRLR/U3802PbF International
TOR Rectifier
Static © TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 12 - - V l/ss = 0V, ID = 250PA
ABVross/ATu Breakdown Voltage Temp. Coefficient - 0.009 - V/°C Reference to 25°C, ID = 1mA ©
Roswn) Static Drain-to-Source On-Resistance - 6.5 8.5 mn Vas = 4.5V, ID = 15A ©
- - 30 Vas = 2.8V, lo =12A
VGS(th) Gate Threshold Voltage 0.6 - 1.9 V Vos = I/ss, ID = 250pA
AVGSahyATJ Gate Threshold Voltage Coefficient - -3.2 - mV/°C
loss Drain-to-Source Leakage Current - - 100 HA Vros = 9.6V, Vss = 0V
- - 250 VDs = 9.6V, Vss = 0V, Tu = 125°C
lass Gate-to-Source Forward Leakage - - 200 n A Vas = 12V
Gate-to-Source Reverse Leakage - - -200 Vas = -12V
gfs Forward Transconductance 31 - - S Vos = 6.0V, ID = 12A
tA, Total Gate Charge - 27 41
0951 Pre-Vth Gate-Source Charge - 3.6 - VDs = 6.0V
0932 Post-Vth Gate-Source Charge - 2.0 - l/ss = 5.0V
di Gate-to-Drain Charge - 10 - nC ID = 6.0A
ngd, Gate Charge Overdrive - 11 - See Fig.16
st Switch Charge (0952 + di) - 12 -
Qoss Output Charge - 28 - nC Vos = 10V, 1/ss = 0V
tdmn) Turn-On Delay Time - 11 - l/oo = 6.0V, Vss = 4.5V©
tr Rise Time - 14 - ns ID = 12A
td(oit) Turn-Off Delay Time - 21 - Clamped Inductive Load
t, Fall Time - 17 -
Ciss Input Capacitance - 2490 - Vas = 0V
Cass Output Capacitance - 2150 - pF Vos = 6.0V
Crss Reverse Transfer Capacitance - 530 - f = 1.0MHz
Avalanche Characteristics
Symbol Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy© - 300 mJ
IAR Avalanche Current© - 20 A
Diode Characteristics
Symbol Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - 84 © MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current integral reverse G
(Body Diode) OD - - 320 p-n junction diode. s
VSD Diode Forward Voltage - 0.81 1.2 V Tu=25oC,ls=12A,Vss=0V ©
- 0.65 - Tu = 125°C, Is = 12A, Vss = 0V ©
trr Reverse Recovery Time - 52 78 ns Tu = 25°C, IF = 12A, VR=20V
Qrr Reverse Recovery Charge - 54 81 nC di/dt = 100A/ps ©
trr Reverse Recovery Time - 50 75 ns TJ = 125°C, IF = 12A, VR=20V
0,, Reverse Recovery Charge - 50 75 nC di/dt = 1OOA/ps ©
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