IRLR3715ZTRRPBF ,20V Single N-Channel HEXFET Power MOSFET in a D-Pak packageApplicationsV R maxQgDSS DS(on) High Frequency Synchronous Buck Converters for Computer Process ..
IRLR3717 ,20V Single N-Channel HEXFET Power MOSFET in a D-Pak packageApplications HEXFET Power MOSFET High Frequency Synchronous BuckV R maxQgDSS DS(on) Converters ..
IRLR3717TRPBF ,20V Single N-Channel HEXFET Power MOSFET in a D-Pak packageApplications HEXFET Power MOSFET High Frequency Synchronous BuckV R maxQgDSS DS(on) Converters ..
IRLR3802 ,12V Single N-Channel HEXFET Power MOSFET in a D-Pak packageApplications.Benefits Ultra-Low Gate Impedance Very Low RDS(on) Fully Characterized Avalanche Vo ..
IRLR3802TRPBF ,12V Single N-Channel HEXFET Power MOSFET in a D-Pak packageApplications. Lead-FreeBenefits Ultra-Low Gate Impedance Very Low RDS(on) Fully Characterized A ..
IRLR3915 ,55V Single N-Channel HEXFET Power MOSFET in a D-Pak packageapplications.IRLR3915 IRLU3915Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous D ..
ISPLSI2032VE , 3.3V In-System Programmable High Density SuperFAST™ PLD
ISPLSI2032VE110LT44 , 3.3V In-System Programmable High Density SuperFAST™ PLD
ISPLSI2032VE110LT44 , 3.3V In-System Programmable High Density SuperFAST™ PLD
ISPLSI2032VE-110LT44 , 3.3V In-System Programmable High Density SuperFAST™ PLD
ISPLSI2032VE-110LT44 , 3.3V In-System Programmable High Density SuperFAST™ PLD
ISPLSI2032VE-110LT44 , 3.3V In-System Programmable High Density SuperFAST™ PLD
IRLR3715ZTRRPBF
20V Single N-Channel HEXFET Power MOSFET in a D-Pak package
PD - 95088A
International IRLlR3715ZPbF
TOR Rectifier IRLU3715ZPbF
HEXFET® Power MOSFET
Applications
q High Frequency Synchronous Buck Voss RDS(on) max tily
Converters for Computer Processor Power 20V 1 1 mg 7.2nC
q High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use 14iir, 4iit
o Lead-Free Ri' I. _
Benefits I.
D-Pak l-Pak
o Ultra-Low Ga/e.lmp.efan.ce IRLR3715Z IRLU37152
. Fully Characterized Avalanche Voltage
and Current
Absolute Maximum Ratings
Parameter Max. Units
VDs Drain-to-Source Voltage 20 V
VGs Gate-to-Source Voltage 1 20
ID @ To = 25°C Continuous Drain Current, Vas @ 10V 49© A
ID @ To = 100°C Continuous Drain Current, Vss @ 10V 35©
IDM Pulsed Drain Current (D 200
PD @TC = 25°C Maximum Power Dissipation 40 W
PD @TC = 100°C Maximum Power Dissipation 20
Linear Derating Factor 0.27 WPC
TJ Operating Junction and -55 to + 175 °C
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Thermal Resistance
Parameter Typ. Max. Units
ROJC Junction-to-Case - 3.75 °C/W
RNA Junction-to-Ambient (PCB Mount) © - 50
RNA Junction-to-Ambient - 110
Notes OD through S are on page 11
1
12/7/04
IRLR/U3715ZPbF
International
Static © T J = 25°C (unless otherwise specified) TOR Rectifier
Parameter Min. Typ. Max. Units Conditions
BVoss Drain-to-Source Breakdown Voltage 20 - - V Vas = 0V, ID = 250pA
ABVDSS/ATJ Breakdown Voltage Temp. Coefficient -- 13 - mV/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance - 8.8 11 mQ I/ss = 10V, ID = 15A OD
- 12.4 15.5 Vas--4.5V, ID: 12A ©
VGS(th) Gate Threshold Voltage 1.65 2.1 2.55 V l/rss = Vss, ID = 250pA
AN/sam/AT: Gate Threshold Voltage Coefficient - -4.8 - mV/°C
loss Drain-to-Source Leakage Current - - 1.0 pA Vos = 16V, Vas = 0V
-- -- 150 VDS = 16V, Vss = 0V, T: = 125°C
less Gate-to-Source Forward Leakage - - 100 nA Vss = 20V
Gate-to-Source Reverse Leakage - - -100 Vas = -20V
gfs Forward Transconductance 33 - - S I/rss = 10V, ID = 12A
a, Total Gate Charge - 7.2 11
0951 Pre-Vth Gate-to-Source Charge - 2.3 - Vos = 10V
0952 Post-Vth Gate-to-Source Charge - 0.90 - nC Vss = 4.5V
di Gate-to-Drain Charge - 2.6 - lo = 12A
ngdr Gate Charge Overdrive - 1.4 - See Fig. 16
st Switch Charge (0932 + di) - 3.5 _
Qoss Output Charge - 3.8 --.- nC Vos = 10v, l/ss = OV
tam) Turn-On Delay Time - 7.8 - VDD = 10V, Vss = 4.5V co
t, Rise Time - 13 - ID = 12A
td(off) Turn-Off Delay Time - 10 - ns Clamped Inductive Load
t, Fall Time - 4.3 -
Ciss Input Capacitance - 810 - Vss = ov
Coss Output Capacitance - 270 - pF Vos = 10V
Crss Reverse Transfer Capacitance - 150 - f = 1.0MHz
Avalanche Characteristics
Parameter
u se e ergy
e rrent
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 49© MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - - 200 integral reverse G
(Body Diode) Ci) p-n junction diode. s
Vso Diode Forward Voltage - -- 1.0 V TJ = 25°C, ls = 12A, l/tss = 0V ©
in Reverse Recovery Time - 11 17 ns T., = 25°C, IF = 12A, VDD = 10V
2, Reverse Recovery Charge - 3.5 5.3 nC di/dt = 100NUS ©
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
