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IRLR3715Z-IRLR3715ZPBF-IRLU3715Z
20V Single N-Channel HEXFET Power MOSFET in a D-Pak package
PD - 94650A
International IRLR3715Z
TOR Rectifier IRLU3715Z
HEXFET® Power MOSFET
Applications
q High Frequency Synchronous Buck Voss RDS(on) max Ctg
Converters for Computer Processor Power 20V 11mg 7.2nC
q High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use 1;ki,i)t, 4it
'. ff4 1*
'ii'i's' 1, ,
Benefits
o Very Low RDS(on) at 4.5V VGS
o Ultra-Low Gate Impedance
. D-Pak l-Pak
0 Fully Characterized Avalanche Voltage IRLR3715Z IRLU3715Z
and Current
Absolute Maximum Ratings
Parameter Max. Units
Vos Drain-to-Source Voltage 20 V
VGS Gate-to-Source Voltage i 20
ID @ TC = 25°C Continuous Drain Current, V(3S @ 10V 4969 A
ID @ Tc = 100°C Continuous Drain Current, N/ss @ 10V 35©
lroM Pulsed Drain Current (D 200
PD @Tc = 25°C Maximum Power Dissipation 40 W
PD @Tc = 100°C Maximum Power Dissipation 20
Linear Derating Factor 0.27 W/°C
TJ Operating Junction and -55 to + 175 ''C
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Thermal Resistance
Parameter Typ. Max. Units
ROJC Junction-to-Case - 3.75 "CAN
RNA Junction-to-Ambient (PCB Mount) © - 50
RNA Junction-to-Ambient - 1 10
Notes OD through S are on page 11
1
04/02/03
IRLR/U3715Z
International
Static @ To = 25°C (unless otherwise specified) TOR Rectifier
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 20 - - V VGS = 0V, ID = 250pA
ABVDSS/ATJ Breakdown Voltage Temp. Coefficient - 13 - mV/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance - 8.8 11 mg V65 = 10V, ID = 15A ©
- 12.4 15.5 VGS = 4.5V, ID = 12A ©
VGS(lh) Gate Threshold Voltage 1.65 2.1 2.55 V Vros = Vss, ID = 250pA
AVGS(th)/ATJ Gate Threshold Voltage Coefficient - -4.8 - mV/°C
loss Drain-to-Source Leakage Current - - 1.0 pA Vos = 16V, VGS = 0V
- - 150 Vos = 16V, VGS = 0V, T: = 125°C
less Gate-to-Source Forward Leakage - - 100 nA V65 = 20V
Gate-to-Source Reverse Leakage - - -100 VGS = -20V
gts Forward Transconductance 33 - - S Vos = 10V, ID = 12A
09 Total Gate Charge - 7.2 11
0951 Pre-Vth Gate-to-Source Charge - 2.3 - Vos = 10V
Qgs2 Post-Vth Gate-to-Source Charge - 0.90 - nC Vss = 4.5V
di Gate-to-Drain Charge - 2.6 - ID = 12A
ngdr Gate Charge Overdrive - 1.4 - See Fig. 16
st Switch Charge (Qgs2 + di) - 3.5 -
Qoss Output Charge - 3.8 - nC Vos = 10V, VGS = 0V
td(on) Turn-On Delay Time - 7.8 - VDD = 10V, I/ss = 4.5V ©
t, Rise Time - 13 - ID = 12A
td(off) Turn-Off Delay Time - 10 - ns Clamped Inductive Load
t, Fall Time - 4.3 -
Ciss Input Capacitance - 810 - Vss = OV
Coss Output Capacitance - 270 - pF Vos = 10v
Crss Reverse Transfer Capacitance - 150 - f = 1.0MHz
Avalanche Characteristics
Parameter
ng se va ergy
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 49© MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - - 200 integral reverse G
(Body Diode) (D p-n junction diode. S
Vso Diode Forward Voltage - - 1.0 V TJ = 25°C, ls = 12A, VGS = 0V ©
trr Reverse Recovery Time - 11 17 ns TJ = 25°C, IF = 12A, Va, = 10V
er Reverse Recovery Charge - 3.5 5.3 nC di/dt = 100A/ps ©
tun Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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