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ISPLSI2032E-110LT48 , In-System Programmable SuperFAST High Density PLD
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IRLR3715
20V Single N-Channel HEXFET Power MOSFET in a D-Pak package
PD - 94177
International
ti R ifi
TOR ech Ier SMPS MOSFET IRLR3715
IRLU3715
HEXFET® Power MOSFET
Applications
. High Frequency Isolated DC-DC VDSS Rns(on) max ID
Converters with Synchronous Rectification 20V 14mn 54A
for Telecom and Industrial Use
. High Frequency Buck Converters for
Computer Processor Power
Benefits tgk,
o Ultra-Low Gate Impedance
0 Very Low RDS(on) at 4.5V VGS
0 Fully Characterized Avalanche Voltage
d Current D-Pak l-Pak
an IRLR3715 IRLU3715
Absolute Maximum Ratings
Symbol Parameter Max. Units
VDS Drain-Source Voltage 20 V
VGs Gate-to-Source Voltage l 20 V
ID @ Tc = 25°C Continuous Drain Current, Vss @ 10V 54@
ID @ To = 100°C Continuous Drain Current, Vss @ 10V 3869 A
IDM Pulsed Drain CurrentC) 210
Pro @Tc = 25°C Maximum Power Dissipation 71 W
PD @TA = 25°C Maximum Power Dissipation© 3.8 W
Linear Derating Factor 0.48 W/''C
T J, TSTG Junction and Storage Temperature Range -55 to + 175 ''C
Thermal Resistance
Parameter Typ. Max. Units
Rac J unction-to-C ase - 2.1
ReJA Junction-to-Ambient - 110 °C/W
Ram Junction-to-Ambient (PCB mount)© - 50
Notes C) through s are on page 10
1
06/28/01
lRLR/U3715 International
TOR Rectifier
Static @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 20 - - V VGS = 0V, ID = 250pA
AV(BR)DSSIATJ Breakdown Voltage Temp. Coemcient - 0.022 - V/°C Reference to 25°C, ID = 1mA
. . . - 11 14 VGs=10V, lro=26A ©
RDS(on) Static Drain-to-Source On-Resistance - 15 20 m9 VGS = 4.5V, ID = 21A ©
VGS(th) Gate Threshold Voltage 1.0 - 3.0 V Vos = VGS, ID = 250pA
loss Drain-to-Source Leakage Current _- _- 12000 pA VS: __- 12x x2: . g, T: = 125°C
less Gate-to-Source Forward Leakage - - 200 n A VGS = 16V
Gate-to-Source Reverse Leakage - - -200 VGs = -16V
Dynamic @ Tu = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 26 - - S Vos = 10V, ID = 21A
Qg Total Gate Charge - 11 17 ID = 21A
Qgs Gate-to-Source Charge - 3.8 - nC Vros = 10V
qu Gate-to-Drain ("Miller") Charge - 4.4 - VGs = 4.5V
Qoss Output Gate Charge - 11 17 V63 = 0V, Vos = 10V
tdmn) Turn-On Delay Time - 6.4 - VDD = 10V
tr Rise Time - 73 - ns ID = 21A
tdrom Turn-Off Delay Time - 12 - Rs = 1.89
tf Fall Time - 5.1 - Vss = 4.5V ©
Ciss Input Capacitance - 1060 - VGs = 0V
Cos, Output Capacitance - 700 - Vros = 10V
Crss Reverse Transfer Capacitance - 120 - pF f = 1.0MHz
Avalanche Characteristics
Symbol Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy© - 110 m]
IAR Avalanche Current© - 21 A
Diode Characteristics
Symbol Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - 54CO MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current integral reverse G
(Body Diode) OD - - 210 p-n junction diode. s
VSD Diode Forward Voltage - 0.9 1.3 V TJ=25°C, Is=21A,VGs=OV ©
- 0.8 - TJ =125oC,ls = 21A, VGS = 0V ©
tn Reverse Recovery Time - 37 56 ns T: = 25°C, Is: = 21A, VR=20V
Qrr Reverse Recovery Charge - 28 42 nC di/dt = 100Alps ©
tn Reverse Recovery Time - 38 57 ns To = 125°C, IF = 21A, VR=20V
Qrr Reverse Recovery Charge - 3O 45 n0 di/dt = 100/Vps ©
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