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IRLR3714Z
20V Single N-Channel HEXFET Power MOSFET in a D-Pak package
PD - 94794
International IRLR3714Z
TOR Rectifier IRLU3714Z
HEXFET® Power MOSFET
Applications
o High Frequency Synchronous Buck Voss RDS(on) max 09
Converters for Computer Processor Power 20V 15mf2 4.7nC
q High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
Benefits iii)
o Very Low RDS(on) at 4.5V VGS ,
o Ultra-Low Gate Impedance
0 Fully Characterized Avalanche Voltage
and Current D-Pak I-Pak
IRLR3714Z IRLU3714Z
Absolute Maximum Ratings
Parameter Max. Units
Vos Drain-to-Source Voltage 20 V
VGS Gate-to-Source Voltage i 20
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 37©
ID @ Tc = 100°C Continuous Drain Current, Veg @ 10V 26 A
IDM Pulsed Drain Current (D 144
PD @Tc = 25°C Maximum Power Dissipation © 35 W
PD @Tc = 100°C Maximum Power Dissipation © 18
Linear Derating Factor 0.23 W/°C
TJ Operating Junction and -55 to + 175 °C
TSTG Storage Temperature Range
Soldering Temperature, tor 10 seconds 300 (1.6mm from case)
Thermal Resistance
Parameter Typ. Max. Units
Rox, Junction-to-Case - 4.28
ROJA Junction-to-Ambient (PCB Mount) s - 50 ''CIW
ROJA Junction-to-Ambient - 110
Notes OD through S are on page 11
1
10/7/03
IRLR/U3714Z International
TOR Rectifier
Static @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 20 - - V Vss = 0V, ID = 250pA
ABN/ross/AT: Breakdown Voltage Temp. Coemcient - 14 - mV/°C Reference to 25''C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance - 12 15 m9 I/ss = 10V, b = 15A ©
- 20 25 Vss = 4.5V, ID = 12A ©
VGS(th) Gate Threshold Voltage 1.65 2.1 2.55 V Ws = VGS, ID = 250pA
AVGS(th)/ATJ Gate Threshold Voltage Coefficient - -5.2 - mV/°C
loss Drain-to-Source Leakage Current - - 1.0 pA Ws = 16V, VGS = 0V
- - 150 V05 = 16V, VGS = 0V, T: = 125°C
less Gate-to-Source Forward Leakage - - 100 nA VGS = 20V
Gate-to-Source Reverse Leakage - - -100 Vss = -20V
gfs Forward Transconductance 21 - - S VDS = 10V, ID = 12A
09 Total Gate Charge - 4.7 7.1
0951 Pre-Vth Gate-to-Source Charge - 1.7 - Vos = 10V
0952 Post-Vth Gate-to-Source Charge - 0.7 - nC I/ss = 4.5V
di Gate-to-Drain Charge - 1.7 - lo = 12A
ngdr Gate Charge Overdrive - 0.6 - See Fig. 16
st Switch Charge (Qgs2 + di) - 2.4 -
Qoss Output Charge - 2.6 - nC Vos = 10V, VGs = 0V
td(on) Turn-On Delay Time - 5.4 - VDD = 15V, VGs = 4.5VO
t, Rise Time - 7.6 - ID = 12A
tam) Turn-Off Delay Time - 9.2 - ns Clamped Inductive Load
it Fall Time - 4.3 -
Ciss Input Capacitance - 560 - I/ss = 0V
Coss Output Capacitance - 180 - pF Ws = 10V
Crss Reverse Transfer Capacitance - 95 - f = 1.0MHz
Avalanche Characteristics
Parameter . Max.
EAS ngle se va nche 31
IAR va urre 12
EAR an nergy 3.5
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 37© MOSFET symbol C)
(Body Diode) A showing the L,-,--,
ISM Pulsed Source Current - - 144 integral reverse C) (rd,
(Body Diode) C) p-n junction diode. c
Vso Diode Forward Voltage - - 1.0 V TJ = 25°C, Is = 12A, VGs = 0V ©
trr Reverse Recovery Time - 21 32 ns Tu = 25°C, IF = 12A, VDD = 10V
er Reverse Recovery Charge - 8.5 13 nC di/dt = 100A/ps ©
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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