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IRLR3705ZTRPBF-IRLU3705ZPBF
55V Single N-Channel HEXFET Power MOSFET in a D-Pak package
International
TOR Rectifier
Features
Logic Level
Advanced Process Technology
Ultra Low On-Resistance
175°C OperatingTemperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
Description
This HEXFETO Power MOSFET utilizesthe latest
processing techniques to achieve extremely low
on-resistance persilicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating.These features combine
to make this design an extremely efficient and
reliabledeviceforuseinawidevarietyofapplications.
Absolute Maximum Ratings
PD - 95956A
lF1LF13705ZPbF
llRLU3705ZPbF
HEXFET© Power MOSFET
VDSS = 55V
G ' rR, RDS(on) = 8.0mQ
s ID = 42A
D-Pak l-Pak
IRLR3705ZPbF IRLU3705ZPbF
Parameter Max. Units
ID © Tc = 25°C Continuous Drain Current, Ves @ 10V (Silicon Limited) 89
ID © TC = 100°C Continuous Drain Current, Ves @ 10V 63 A
ID © Tc = 25°C Continuous Drain Current, Vos @ 10V (Package Limited) 42
IDM Pulsed Drain Current (D 360
PD @Tc = 25°C Power Dissipation 130 W
Linear Derating Factor 0.88 W/°C
VGs Gate-to-Source Voltage t 16 V
EAS(rherrmwyiimited) Single Pulse Avalanche Energy© 110 mJ
EAs(Tested) Single Pulse Avalanche Energy Tested Value © 190
IAre Avalanche Current CD See Fig.12a,12b,15,16 A
EAR Repetitive Avalanche Energy Cs) md
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range ''C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting Torque, 6-32 or M3 screw 10 Ibf-in (1 .1N'm)
Thermal Resistance
Parameter Typ. Max. Units
RedC Junction-to-Case © - 1.14
ReJA Junction-to-Ambient (PCB mount) COS - 40 °C/W
FteJA Junction-to-Ambient © - 110
HEXFET® is a registered trademark of International Rectifier.
1
10/01/10
IRLR/U3705ZPbF
International
TOR Rectifier
Electrical Characteristics © T, = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55 - - V Vss = 0V, ID = 250uA
AV(BR)DSSIATJ Breakdown Voltage Temp. Coefficient - 0.053 - V/°C Reference to 25°C, ID = 1mA
RDSM) Static Drain-to-Source On-Resistance - 6.5 8.0 mn Vas = 10V, ID = 42A ©
- - 11 Vss = 5.0V, ID = 34A ©
- --- 12 VGS=4.5V, ID=21A®
Vegan) Gate Threshold Voltage 1.0 - 3.0 V Vos = Vas, ID = 250pA
gfs Forward Transconductance 89 - - S l/ns = 25V, ID = 42A
loss Drain-to-Source Leakage Current -- - 20 PA Vos = 55V, l/ss = 0V
- - 250 Vos = 55V, Vas = 0V, TJ = 125°C
IGSS Gate-to-Source Forward Leakage - - 200 nA Vss = 16V
Gate-to-Source Reverse Leakage - - -200 Vss = -16V
q, Total Gate Charge - 44 66 ID = 42A
Qgs Gate-to-Source Charge - 13 - nC Vrrs = 44V
di Gate-to-Drain ("Miller") Charge -- 22 -- Ves = 5.0V ©
td(on) Turn-On Delay Time - 17 - VDD = 28V
t, Rise Time - 150 - ID = 42A
td(0ff) Turn-Off Delay Time -- 33 -- ns Rs = 4.2 Q
tf Fall Time - 70 - Vss = 5.0V ©
LD Internal Drain Inductance - 4.5 - Between lead,
nH 6mm (0.25in.)
Ls Internal Source Inductance - 7.5 - from package
and center of die contact
Ciss Input Capacitance -- 2900 -- Vas = 0V
Coss Output Capacitance - 420 - Vos = 25V
Crss Reverse Transfer Capacitance - 230 - pF f = 1.0MHz
Coss Output Capacitance - 1550 - Vss = 0V, l/rss = 1.0V, f = 1.0MHz
Coss Output Capacitance - 320 - Ves = 0V, Vos = 44V, f = 1.0MHz
Coss eff. Effective Output Capacitance - 500 - Vas = 0V, Vos = 0V to 44V Cr)
Source-Drain Ratings and Characteristics
Parameter Min Typ. Max. Units Conditions
Is Continuous Source Current - - 42 MOSFET symbol D
(Body Diode) A showing the C,-,
ISM Pulsed Source Current - - 360 integral reverse G E
(Body Diode) CD p-n junction diode. fl
VSD Diode Forward Voltage -- -- 1.3 V TJ = 25°C, ls = 42A, VGS = 0V ©
trr Reverse Recovery Time - 21 42 ns TJ = 25°C, IF = 42A, VDD = 28V
Qrr Reverse Recovery Charge - 14 28 nC di/dt = 100A/ps ©
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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