IRLR3705Z ,Specifically designed for Automotive applications,this HEXFET Power MOSFETapplications.IRLR3705Z IRLU3705ZAbsolute Maximum RatingsParameter Max. Units(Silicon Limited)I @ T ..
IRLR3705ZTRPBF ,55V Single N-Channel HEXFET Power MOSFET in a D-Pak packageapplications.D-Pak I-PakIRLR3705ZPbF IRLU3705ZPbFAbsolute Maximum RatingsParameter Max. Units(Silic ..
IRLR3714 ,20V Single N-Channel HEXFET Power MOSFET in a D-Pak packageApplicationsV R max I High Frequency Isolated DC-DCDSS DS(on) D Converters with Synchronous Rect ..
IRLR3714TR ,20V Single N-Channel HEXFET Power MOSFET in a D-Pak packagePD - 94266IRLR3714SMPS MOSFETIRLU3714®HEXFET Power MOSFET
IRLR3714TRPBF ,20V Single N-Channel HEXFET Power MOSFET in a D-Pak packageApplications High Frequency Isolated DC-DCV R max IDSS DS(on) D Converters with Synchronous Rect ..
IRLR3714TRPBF ,20V Single N-Channel HEXFET Power MOSFET in a D-Pak packagePD - 95554AIRLR3714PbFSMPS MOSFETIRLU3714PbFHEXFET Power MOSFET
ISPLSI2032A-80LT48I , In-System Programmable High Density PLD
ISPLSI2032A-80LT48I , In-System Programmable High Density PLD
ISPLSI2032E-110LJ44 , In-System Programmable SuperFAST High Density PLD
ISPLSI2032E-110LT48 , In-System Programmable SuperFAST High Density PLD
ISPLSI2032E-180LJ44 , In-System Programmable SuperFAST High Density PLD
ISPLSI2032E-180LT44 , In-System Programmable SuperFAST High Density PLD
IRLR3705Z
Specifically designed for Automotive applications,this HEXFET Power MOSFET
PD - 96896
International
TOR. Rectifier AUTOMOTIVE MOSFET lRLR3705Z
IRLU3705Z
Features
oLogic Level HEXFET® Power MOSFET
.Advanced Process Technology
.Ultra Low On-Resistance D
175°C 0 eratin Tem erature VDSS = 55V
. p g p
.Fast Switching
eRepetitive Avalanche Allowed up to TImax G ~ A RDS(on) = 8.0mf2
Description
Specifically designed for Automotive applications, s ID = 42A
this HEXFET6 Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating 14it 1(,it
temperature, fast switching speed and improved Ri' l, - V
repetitive avalanche rating . These features com- I.
bine to make this design an extremely efficient and
reliable device for use in Automotive applications D Pak I Pak
and a wide variety of other applications. IRLR37052 IRLU37052
Absolute Maximum Ratings
Parameter Max. Units
ID @ To = 25°C Continuous Drain Current, Vas @ 10V (Silicon Limited) 89
ID @ To = 100°C Continuous Drain Current, Vas @ 10V 63 A
lo © To = 25°C Continuous Drain Current, Vos @ 10V (Package Limited) 42
lu, Pulsed Drain Current co 360
Po @Tc = 25°C Power Dissipation 130 w
Linear Derating Factor 0.88 W/°C
Vas Gate-to-Source Voltage 1 16 V
EAsuThermaoyiirnited) Single Pulse Avalanche Energy© 110 mJ
EAS (Tested ) Single Pulse Avalanche Energy Tested Value © 190
|AR Avalanche Current (D See Fig.12a, 12b, 15, 16 A
EAR Repetitive Avalanche Energy s mJ
To Operating Junction and -55 to + 175
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting Torque, 6-32 or M3 screw 10 Ibtoin (1.1N°m)
Thermal Resistance
Parameter Typ. Max. Units
Reuc Junction-to-Case - 1.14
ReJA Junction-to-Ambient (PCB mount) ©© - 40 °C/W
' Junction-to-Ambient - 110
HEXFET® is a registered trademark of International Rectifier.
1
9/29/04
|RLR/U3705Z
International
IEER Rectifier
Electrical Characteristics © T,, = 25°C (unless otherwise specified)
Parameter Min. va. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55 - - V Ves = 0V, ID = 250pA
AV(.3R)E,SS/ATJ Breakdown Voltage Temp. Coefficient - 0.053 - V/°C Reference to 25°C, ID = 1mA
Rrosom Static Drain-to-Source On-Resistance - 6.5 8.0 mn I/ss = 10V, ID = 42A ©
- - 11 l/ss = 5.0V, ID = 34A co
- - 12 Vas=4.5V, ID=21A ©
Vegan) Gate Threshold Voltage 1.0 - 3.0 V Vos = Vss, ID = 250pA
gfs Forward Transconductance 89 - - S Vos = 25V, ID = 42A
loss Drain-to-Source Leakage Current - - 20 pA Vos = 55V, I/ss = 0V
- - 250 Vrys = 55V, I/ss = OV, T J = 125°C
less Gate-to-Source Forward Leakage - - 200 nA Ves = 16V
Gate-to-Source Reverse Leakage - - -200 Vss = -16V
q, Total Gate Charge - 44 66 ID = 42A
Qgs Gate-to-Source Charge - 13 -- nC Vos = 44V
di Gate-to-Drain ("Miller") Charge - 22 - Ves = 5.0V ©
tum") Turn-On Delay Time - 17 - VDD = 28V
t, Rise Time - 150 - ID = 42A
tam) Turn-Off Delay Time - 33 - ns Rs = 4.2 Q
tf Fall Time - 7O - Vss = 5.0V Cs)
LD Internal Drain Inductance - 4.5 -- Between lead, /”"é
nH 6mm (0.25in.) J, :1
Ls Internal Source Inductance - 7.5 - from package 'l,
and center of die contact
Ciss Input Capacitance - 2900 - Vss = 0V
Coss Output Capacitance - 420 - VDS = 25V
Crss Reverse Transfer Capacitance - 230 - pF f = 1.0MHz
Cass Output Capacitance - 1550 - Vss = 0V, Vos = 1.0V, f = 1.0MHz
Coss Output Capacitance - 320 - Vas = 0V, Vos = 44V, f = 1.0MHz
Coss eff. Effective Output Capacitance - 500 - Vss = 0V, l/rss = 0V to 44V CO
Source-Drain Ratings and Characteristics
Parameter Min Typ. Max. Units Conditions
ls Continuous Source Current - - 42 MOSFET symbol 0
(Body Diode) A showing the fir
ISM Pulsed Source Current - - 360 integral reverse 6 :3;
(Body Diode) C) p-n junction diode. V e
VSD Diode Forward Voltage - - 1.3 v T J = 25°C, IS = 42A, l/ss = OV ©
trr Reverse Recovery Time - 21 42 ns T J = 25°C, IF = 42A, VDD = 28V
Qrr Reverse Recovery Charge - 14 28 nC di/dt = 100A/ps ©
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
