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IRLR3410TRLPBF
100V Single N-Channel HEXFET Power MOSFET in a D-Pak package
PD - 95087A
lRLlR/U3410PbF
International
Tart, Rectifier
0 Logic Level Gate Drive HEXFET® Power MOSFET
q Ultra Low On-Resistance
0 Surface Mount (IRLR3410) D
o Straight Lead (IRLU3410) Voss = 100V
q Advanced Process Technology
q Fast Switching ' A RDS(on) = 01059
q Fully Avalanche Rated G
o Lead-Free ID = 17A
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide
variety of applications.
D-PAK l-PAK
The D-PAK is designed for surface mounting using TO-252AA TO-251AA
vapor phase, infrared, or wave soldering techniques.
The straight lead version (IRFU series) is for through-
hole mounting applications. Power dissipation levels
up to 1.5 watts are possible in typical surface mount
applications.
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, Vas @ 10V 17
ID © Tc = 100°C Continuous Drain Current, Vas @ 10V 12 A
IDM Pulsed Drain Current C0(S) 60
PD @TC = 25°C Power Dissipation 79 W
Linear Derating Factor 0.53 W/°C
I/es Gate-to-Source Voltage * 16 V
EAS Single Pulse Avalanche Energy©S 150 mJ
IAR Avalanche CurrentC0© 9.0 A
EAR Repetitive Avalanche EnergyOS 7.9 mJ
dv/dt Peak Diode Recovery dv/dt © 5.0 V/ns
To Operating Junction and -55 to + 175
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Thermal Resistance
Parameter Typ. Max. Units
Flax: Junction-to-Case - 1 .9
ReJA Junction-to-Ambient (PCB mount) ** - 50 °C/W
RQJA Junction-to-Ambient - 1 10
1
12/7/04
lFlLR/U3410PbF International
TOR Rectifier
Electrical Characteristics © Tg = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(Bmpss Drain-to-Source Breakdown Voltage 100 - - V Vas = 0V, ID = 250pA
AV(BR,Dss/ATJ Breakdown Voltage Temp. Coefficient - 0.122 - V/°C Reference to 25°C, ID = 1 mA
- - 0.105 Vss=10V,lD=10A©
Roam) Static Drain-to-Source On-Resistance - - 0.125 w Vss = 5.0V, ID = 10A ©
- - 0.155 VGs = 4.0V, ID = 9.0A ©
Vegan) Gate Threshold Voltage 1.0 - 2.0 V Vos = Vas, ID = 250pA
gfs Forward Transconductance 7.7 - - S Vos = 25V, ID = 9.0A©
loss Drain-to-Source Leakage Current : _- Ji', pA VS: : :58:YV::S==03YTJ = 150°C
less Gate-to-Source Forward Leakage - - 100 n A VGS = 16V
Gate-to-Source Reverse Leakage -- - -100 l/tss = -16V
Qg Total Gate Charge - - 34 ID = 9.0A
Qgs Gate-to-Source Charge - - 4.8 nC Vos = 80V
di Gate-to-Drain ("Miller") Charge - - 20 Vas = 5.0V, See Fig. 6 and 13 ©©
tdwn) Turn-On Delay Time - 7.2 - l/oo = 50V
t, Rise Time - 53 - ns ID = 9.0A
tum) Turn-Off Delay Time - 30 - Rs = 6.09, l/ss = 5.0V
tf Fall Time 26 RD = 5.59, See Fig. 10 ©C0
. Between lead, D
u, Internal Drain Inductance - 4.5 - nH 6mm (0.25in.) E )
Ls Internal Source Inductance - 7.5 - from package . G
and center of die contact© s
Ciss Input Capacitance - 800 - Vss = 0V
Coss Output Capacitance - 160 - pF VDs = 25V
Crss Reverse Transfer Capacitance - 90 - f = 1.0MHz, See Fig. 5(5)
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 17 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current integral reverse G
(Body Diode) (NS) - - 60 p-n junction diode. s
VSD Diode Forward Voltage - - 1.3 V TJ = 25°C, IS = 9.0A, Vas = 0V ©
trr Reverse Recovery Time - 140 210 ns Tu = 25°C, IF =9.0A
a,, Reverse RecoveryCharge - 740 1100 nC di/dt = 100A/ps (4DCs)
ton Forward Turn-On Time Intrinsic tum-on time is negligible (turn-on is dominated by LS+LD)
Notes:
co Repetitive rating; pulse width limited by © Pulse width 3 300ps; duty cycle S 2%
max. junction temperature. ( See fig. 11 )
© VDD = 25V, starting Tu = 25°C, L = 3.1 mH (S) Uses IRL530N data and test conditions
RG = 259, IAS = 9.0A. (See Figure 12)
© ISD s 9.0A, di/dt S 540A/ps, VDD S V(BR)DSSv © This is applied for I-PAK, LS of D-PAK is measured between lead and
TJ S 175°C center of die contact
** When mounted on I" square PCB (FR-4 or G-10 Material ) .
For recommended footprint and soldering techniques refer to application note #AN-994
2
