IRLR3303TRPBF ,30V Single N-Channel HEXFET Power MOSFET in a D-Pak packageapplications. Parameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ 1 ..
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IRLR3410TRLPBF ,100V Single N-Channel HEXFET Power MOSFET in a D-Pak packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
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IRLR3303TRPBF
30V Single N-Channel HEXFET Power MOSFET in a D-Pak package
International
Tart, Rectifier
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve the lowest possible on-resistance per
silicon area. This benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs are well known for,
provides the designer with an extremely efficient device for use in a wide
Logic-Level Gate Drive
Ultra Low On-Resistance
Surface Mount (IRLR3303)
Straight Lead (IRLU3303)
Advanced Process Technology
Fast Switching
Fully Avalanche Rated
Lead-Free
PD- 95086A
IRLR/U3303PbF
HEXFET© Power MOSFET
VDSS = 30V
RDS(on) = 0.031 Q
ID = 35AS
variety of applications.
The D-PAK is designed for surface mounting using vapor phase, infrared, or D-Pak
wave soldering techniques. The straight lead version (IRFU series) is for TO-252AA TO-251AA
through-hoie mounting applications. Power dissipation levels up to 1.5 watts
are possible in typical surface mount applications.
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, Vas @ 10V 35 s
ID © To = 100°C Continuous Drain Current, Vss @ 10V 25 A
IDM Pulsed Drain Current (D 140
pr, @Tc = 25°C Power Dissipation 68 W
Linear Derating Factor 0.45 W/°C
Ves Gate-to-Source Voltage 1 16 V
EAs Single Pulse Avalanche Energy© 130 mJ
IAR Avalanche CurrentCD 20 A
EAR Repetitive Avalanche Energy0) 6.8 mJ
dv/dt Peak Diode Recovery dv/dt © 5.0 V/ns
TJ Operating Junction and -55 to + 175
Tsms StorageTemperature Range °C
Soldering Temperature, for 1 0 seconds 300 (1 .6mm from case)
Thermal Resistance
Parameter Typ. Max. Units
Flax: Junction-to-Case - 2.2
ROJA Case-to-Ambient(PCB mount)" - 50 °CNV
RQJA Junction-to-Ambient - 110
** When mounted on 1" square PCB (FR-4 or G-1O Material ) .
For recommended footprint and soldering techniques refer to application note #AN-994
1
12/7/04
IRLR/U3303PbF
International
TOR Rectifier
Electrical Characteristics © Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 30 - - V Vas = 0V, ID = 250uA
AV(BR)DSS/ATJ Breakdown VoltageTemp. Coefficient - 0.035 - V/°C Reference to 25°C, ID = 1mA
. . . - - 0.031 Vas =10V,ID = 21A ©
Roam) StaticDraln-to-SourceOn-ReSIstance - _ 0045 Q Vss = 4.5V, ID = 17A ©
Vcuum) Gate Threshold Voltage 1.0 --- - V Vos = kss, ID = 250PA
gfs Forward Transconductance 12 __- __- S Vros = 25V, ID = 20A©
loss Drain-to-Source LeakageCurrent - - 25 PA VDS = 30V, Vss = 0V
- - 250 Vos = 24V, VGS = 0V, To = 150°C
less Gate-to-Source Forward Leakage - - 100 nA VGS = 16V
Gate-to-Source Reverse Leakage - - -100 Vss = -16V
% Total Gate Charge -- - 26 ID = 20A
095 Gate-to-Source Charge -- --- 8.8 nC VDs = 24V
di Gate-to-Drain ("Miller") Charge -_- --- 15 Viss = 4.5V, See Fig. 6 and 13 ©©
td(on) Turn-On Delay Time - 7.4 - VDD = 15V
ty Rise Time - 200 - ns ID = 20A
tdist) Turn-Off Delay Time - 14 - Rs = 6.59, Vas = 4.5V
tf FaIITime 36 RD = 0.709, See Fig. 10 (90)
. Between lead, D
u, IntemalDrain Inductance __- 4.5 -.-.- nH 6mm (0.25in.) E )
from package a
Ls InternaISourcelnductance - 7.5 - and center of die contact© S
Ciss InputCapacitance - 870 - Vss = 0V
Cass OutputCapacitance - 340 - pF Vos = 25V
Crss Reverse TransferCapacitance - 170 - f = 1.0MHz, See Fig. 50)
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol D
(Body Diode) - - 35 © A showing the
ISM Pulsed Source Current - - 140 integral reverse G
(Body Diode) (D p-n junction diode. s
VSD Diode Forward Voltage --.- --.- 1.3 V Tu = 25°C, Is = 20A, VGS = 0V 6)
tr, Reverse RecoveryTime - 72 110 ns To = 25°C, IF = 20A
Qrr Reverse RecoveryCharge - 180 280 nC di/dt = 100A/us (90)
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by LS+LD)
Notes:
co Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
© VDD = 15V, starting Tu = 25°C, L =470pH
Rs = 259., IAS-- 20A. (See Figure 12)
© Iso S 20A, di/dt S 140A/ps, VDD S V(BR)DSS:
TJs175°C
G) Pulse width 3 300ps; duty cycle S 2%.
(S) Caculated continuous current based on maximum allowable
junction temperature; Package limitation current = 20A.
© This is applied for l-PAK, LS of D-PAK is measured between
lead and center of die contact.
© Uses IRL3303 data and test conditions.
