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IRLR3303-IRLR3303 TR-IRLR3303PBF-IRLR3303TR-IRLU3303-IRLU3303PBF
30V Single N-Channel HEXFET Power MOSFET in a D-Pak package
International
Tart, Rectifier
PD- 91316F
IRLR/U3303
HEXFET0 Power MOSFET
Logic-Level Gate Drive D
Ultra Low On-Resistance
Surface Mount (IRLR3303)
Straight Lead (IRLU3303) - A
Advanced Process Technology G
Fast Switching
Fully Avalanche Rated s
VDSS = 30V
RDS(on) = 0.0319
ID = MAS
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve the lowest possible on-resistance per
silicon area. This benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs are well known for,
provides the designer with an extremely efhcient device for use in a wide
variety of applications.
The D-PAK is designed for surface mounting using vapor phase, infrared, or D-Pak
wave soldering techniques. The straight lead version (IRFU series) is for T0-252AA TO-MIAA
through-hole mounting applications. Power dissipation levels up to 1.5 watts
are possible in typical surface mount applications.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @10V 35 s
ID @ Tc = 100°C Continuous Drain Current, VGS @10V 25 A
IDM Pulsed Drain Current C) 140
Po @Tc = 25°C Power Dissipation 68 W
Linear Derating Factor 0.45 Wl°C
VGS Gate-to-Source Voltage 1 16 V
EAS Single Pulse Avalanche Energy© 130 m]
IAR Avalanche Current© 20 A
EAR Repetitive Avalanche Energy© 6.8 mJ
dv/dt Peak Diode Recovery dv/dt © 5.0 V/ns
TJ Operating Junction and -55 to + 175
Tsms Storage Temperature Range cc
Soldering Temperature, for 1 0 seconds 300 (1 .6mm from case)
Thermal Resistance
Parameter Typ. Max. Units
ReJC Junction-to-Case - 2.2
ROJA Case-to-Ambient(PCB mount)" - 50 "CA/V
RQJA Junction-to-Ambient - 1 10
** When mounted on 1" square PCB (FR-4 or G-10 Material ) .
For recommended footprint and soldering techniques refer to application note #AN-994
9/28/98
IRLR/U3303
International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 30 - - V VGs = 0V, ID = 250PA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coemcient - 0.035 - W'C Reference to 25''C, ID = 1mA
. . . - - 0.031 sz=1ov, 10:21A@
Roam) StaticDrain-to-SourceOn-Resistance - _ 0.045 n VGS = 4.5V, ID = 17A ©
VGS(th) Gate Threshold Voltage 1.0 - - V Vos = VGs, ID = 250pA
gfs Fon/vard Transconductance 12 - - S VDs = 25V, ID = 20A©
loss Drain-to-Source Leakage Current - - 25 pA VDS = 30V, Vss = 0V
- - 250 Vos = 24V, VGs = 0V, TJ = 150°C
less Gate-to-Source Forward Leakage - - 100 nA VGS = 16V
Gate-to-Source Reverse Leakage - - -100 VGS = -16V
09 Total Gate Charge - - 26 ID = 20A
095 Gate-to-Source Charge - - 8.8 no VDs = 24V
di Gate-to-Drain ("Miller") Charge - - 15 VGS = 4.5V, See Fig. 6 and 13 (400)
tam) Turn-On Delay Time - 7.4 - VDD = 15V
tr Rise Time - 200 - ns ID = 20A
Idiom Turn-Off Delay Time - 14 - RG = 6.59, l/GS = 4.5V
t, Fall Time 36 RD = 0.709, See Fig. 10 C4)Cr)
. Between lead, D
Lo InternalDrainlnductance - 4.5 - nH 6mm (0.25in.) E )
from package G
Ls IntemaISourcelnductance - 7.5 - and center of die contact© s
Ciss InputCapacitance - 870 - VGS = 0V
Coss OutputCapacitance - 340 - pF Vos = 25V
Crss Reverse Transfer Capacitance - 170 - f = 1.0MHz, See Fig. 50)
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol D
(Body Diode) - - 35 s A showing the
ISM Pulsed Source Current - - 140 integral reverse G
(Body Diode) (D p-n junction diode. s
VSD Diode Forward Voltage - - 1.3 V T: = 25°C, Is = 20A, VGS = 0V ©
trr Reverse Recovery Time - 72 110 ns T: = 25''C, IF = 20A
Q, Reverse RecoveryCharge - 180 280 nC di/dt = 100A/ps (90)
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by LS+LD)
Notes:
co Repetitive rating; pulse width limited by
max. junction temperature. ( See Rr 11 )
© VDD =15V,starting TJ = 25°C, L =470pH
Rs = 259, IAS-- 20A. (See Figure 12)
© Iso S 20A, di/dt
Tus 175°C
© Pulse width s 300ps; duty cycle 3 2%.
s Caculated continuous current based on maximum allowable
junction temperature;
Package limitation current = 20A.
© This is applied tor l-PAK, Ls of D-PAK is measured between
lead and center of die contact.
© Uses IRL3303 data and test conditions.
