IRLR3114ZTRPBF ,40V Single N-Channel HEXFET Power MOSFET in a D-Pak packageapplications.D-PakI-PakIRLR3114ZPbFIRLU3114ZPbFAbsolute Maximum RatingsParameter Max. UnitsI @ T = ..
IRLR3303 ,30V Single N-Channel HEXFET Power MOSFET in a D-Pak packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
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IRLR3303PBF ,30V Single N-Channel HEXFET Power MOSFET in a D-Pak packagePD- 91316FIRLR/U3303®HEXFET Power MOSFETl Logic-Level Gate DriveDl Ultra Low On-Resistance V = 30VD ..
IRLR3303TR ,30V Single N-Channel HEXFET Power MOSFET in a D-Pak packageapplications. D-Pak I-PakThe D-PAK is designed for surface mounting using vapor phase, infrare ..
IRLR3303TRPBF ,30V Single N-Channel HEXFET Power MOSFET in a D-Pak packageapplications. Parameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ 1 ..
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IRLR3114ZTRPBF
40V Single N-Channel HEXFET Power MOSFET in a D-Pak package
PD - 97284A
lF1LF13114ZPbF
lF1LU3114ZPbF
International
TOR Rectifier
Features ©
. Advanced Process Technology H EXFET Power MOSFET
175°C Operating Temperature
Fast Switching Voss = 40V
Repetitive Avalanche Allowed up to Tjmax
Logic Level G RDS(on) = 4.9mQ
Description
This HEXFETO PowerMOSFET utilizesthe latest s
processing techniques to achieve extremely low
on-resistance persilicon area. Additional features
Ultra Low On-Resistance D
of this design are a 175°C junction operating 1tiaiiit,
temperature, fast switching speed and improved Ri' l
repetitive avalanche rating. Thesefeatures combine l P
to make this design an extremely efficient and .
reliable device for use in a wide variety of
applications. D-Pak l-Pak
lfRLR3114ZPbF IRLU3114ZPbF
Absolute Maximum Ratings
Parameter Max. Units
'0 @ To = 25°C Continuous Drain Current, Vas @ 10V (Silicon Limited) 130
ID @ To = 100°C Continuous Drain Current, Vas @ 10V (Silicon Limited) 89 A
ID @ To = 25°C Continuous Drain Current, Vas @ 10V (Package Limited) 42
'DM Pulsed Drain Current CD 500
PD @T0 = 25°C Power Dissipation 140 W
Linear Derating Factor 0.95 w/oc
VGS Gate-to-Source Voltage t16 V
EAS(ThermaIIyIimited) Single Pulse Avalanche Energy© 130 mJ
EAs(Tested ) Single Pulse Avalanche Energy Tested Value © 260
IAR Avalanche Current CO See Fig.12a, 12b, 15, 16 A
EAR Repetitive Avalanche Energy S mJ
To Operating Junction and -55 to + 175
TSTG Storage Temperature Range I
Reflow Soldering Temperature, for 10 seconds 300
Mounting Torque, 6-32 or M3 screw 10 Ibf-in (1.1N-m)
Thermal Resistance
Parameter Typ. Max. Units
Roc Junction-to-Case - 1.05
Ro, Junction-to-Ambient (PCB mount) C000 - 40 °CNV
Ro, Junction-to-Ambient - 110
HEXFET® is a registered trademark of International Rectifier.
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|RLR/U3114ZPbF
International
TOR Rectifier
Electrical Characteristics © T., = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)Dss Drain-to-Source Breakdown Voltage 40 - - V VGS = 0V, ID = 250uA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.032 - V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance - 3.9 4.9 mf2 VGS = 10V, ID = 42A ©
- 5.2 6.5 VGS = 4.5V, ID = 42A ©
Vesuh) Gate Threshold Voltage 1.0 - 2.5 V Vos = Vas, ID = 100pA
gfs Forward Transconductance 98 - - S Vos = 10V, ID = 42A
loss Drain-to-Source Leakage Current - - 20 PA Vos = 40V, Vas = 0V
- - 250 I/os = 40V, Vas = OV, T, = 125°C
less Gate-to-Source Forward Leakage - - 100 nA Vas = 16V
Gate-to-Source Reverse Leakage - - -100 I/ss = -16V
q, Total Gate Charge - 40 56 ID = 42A
As Gate-to-Source Charge - 12 - nC Vos = 20V
di Gate-to-Drain ("Miller") Charge - 18 - Vas = 4.5V a
tum) Turn-On Delay Time - 25 - VDD = 20V
t, Rise Time - 140 - ID = 42A
tum) Turn-Off Delay Time --.- 33 - ns Rs = 3.79
t, Fall Time -- 50 -- Vas = 4.5V oo
Lo Internal Drain Inductance -- 4.5 -- Between lead, D
nH 6mm (0.25in.) C -)
Ls Internal Source Inductance -- 7.5 -- from package 6% 1
and center of die contact s
Ciss Input Capacitance - 3810 - Vss = OV
Coss Output Capacitance - 650 - Vos = 25V
Crss Reverse Transfer Capacitance - 350 - pF f = 1.0MHz
Cass Output Capacitance - 2390 - Vss = 0V, Vrss = 1.0V, f = 1.0MHz
Cass Output Capacitance - 580 - Vss = 0V, Vrss = 32V, f = 1.0MHz
Cass eff. Effective Output Capacitance - 820 - Vss = 0V, VDS = 0V to 32V ©
Source-Drain Ratings and Characteristics
Parameter Min Typ. Max. Units Conditions
Is Continuous Source Current - - 130 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - - 500 integral reverse G
(Body Diode) CD p-n junction diode. S
VSD Diode Forward Voltage - - 1.3 V TJ = 25°C, Is = 42A, Vas = 0V ©
trr Reverse Recovery Time - 30 45 ns Tu = 25°C, IF = 42A, VDD = 20V
Qrr Reverse Recovery Charge - 27 41 nC di/dt = 100A/ps ©
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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