IRLR3110ZTRPBF ,100V HEXFET Power MOSFET in a D-Pak packageFeatures®HEXFET Power MOSFET
IRLR3110Z-IRLR3110ZTRPBF
100V HEXFET Power MOSFET in a D-Pak package
PD - 97175B
lF1LF13110ZPbF
F t lF1LU3110ZPbF
. Advanced Process Technology H EXFET© Power MOSFET
Ultra Low On-Resistance D
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
International
TOR Rectifier
VDSS = 100V
Description G
Specifically designed for Industrial applications,
this HEXFET8 Power MOSFET utilizes the latest s
processing techniques to achieve extremely low
on-resistance persilicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating . These features com-
bine to make this design an extremely efficient and
reliable device for use in Industrial applications
and a wide variety of other applications. D-Pak I-Pak
lRLR3110ZPbF IRLU3110ZPbF
Absolute Maximum Ratings
Parameter Max. Units
ID @ To = 25°C Continuous Drain Current, Vss @ 10V (Silicon Limited) 63
ID @ To = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited) 45 A
ID @ To = 25°C Continuous Drain Current, l/ss @ 10V (Package Limited) 42
'DM Pulsed Drain Current © 250
PD @T0 = 25°C Power Dissipation 140 W
Linear Derating Factor 0.95 W/°C
VGS Gate-to-Source Voltage t16 V
EAS (Thermally limited) Single Pulse Avalanche Energy© 110 mJ
EAS (Tested ) Single Pulse Avalanche Energy Tested Value © 140
'AR Avalanche Current CD See Fig.12a, 12b, 15, 16 A
EAR Repetitive Avalanche Energy co mJ
Tu Operating Junction and -55 to + 175
TSTG Storage Temperature Range I
Reflow Soldering Temperature, for 10 seconds 300
Mounting Torque, 6-32 or M3 screw 10 lbein (1.1N'm)
Thermal Resistance
Parameter Typ. Max. Units
Roc Junction-to-Case - 1.05
Ro, Junction-to-Ambient (PCB mount) ©© - 40 °C/W
ReJA Junction-to-Ambient - 110
HEXFET® is a registered trademark of International Rectifier.
1
11/30/09
Downloaded from: http://www.datasheetcata|o_q.com/
IRLR/U3rl0ZPbF
International
TOR Rectifier
Electrical Characteristics @ T, = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 100 - - V Vas = 0V, ID = 250uA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.077 - V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance - 11 14 mn Vas = 10V, b = 38A ©
- 12 16 Ves=4.5V, lro=32A ©
VGS(th) Gate Threshold Voltage 1.0 - 2.5 V Vos = Vas, ID = 100pA
gfs Forward Transconductance 52 - - S Vos = 25V, ID = 38A
loss Drain-to-Source Leakage Current - - 20 PA Vos = 100V, Vas = 0V
- - 250 I/os = 100V, Vas = ov, To = 125°C
less Gate-to-Source Forward Leakage - - 200 nA I/as = 16V
Gate-to-Source Reverse Leakage - - -200 Ves = -16V
q, Total Gate Charge - 34 48 ID = 38A
ths Gate-to-Source Charge - 10 - nC Vos = 50V
di Gate-to-Drain ("Miller") Charge - 15 - Ves = 4.5V ©
td(on) Turn-On Delay Time - 24 - VDD = 50V
t, Rise Time - 110 - lo = 38A
td(off) Turn-Off Delay Time --.- 33 - ns Rs = 3.70
tr Fall Time -- 48 - Vss = 4.5V ©
Lo Internal Drain Inductance -- 4.5 -- Between lead, D
nH 6mm (0.25in.) C -)
Ls Internal Source Inductance -- 7.5 -- from package 6%!
and center of die contact s
Ciss Input Capacitance - 3980 - Vss = 0V
Coss Output Capacitance - 310 - Vrvs = 25V
Crss Reverse Transfer Capacitance - 130 - pF f = 1.0MHz
Coss Output Capacitance - 1820 - Vss = 0V, Vrss = 1.0V, f = 1.0MHz
Coss Output Capacitance - 170 - Vas = 0V, Vos = 80V, f = 1.0MHz
Coss eff. Effective Output Capacitance - 320 - Vas = 0V, VDS = 0V to 80V ©
Source-Drain Ratings and Characteristics
Parameter Min Typ. Max. Units Conditions
Is Continuous Source Current - - 63 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - - 250 integral reverse G
(Body Diode) OD p-n junction diode. S
VSD Diode Forward Voltage - - 1.3 V TJ = 25°C, Is = 38A, l/ss = 0V ©
trr Reverse Recovery Time - 34 51 ns Tu = 25°C, IF = 38A, VDD = 50V
A, Reverse Recovery Charge - 42 63 nC di/dt = 100A/ps ©
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
Downloaded from: http://www.datasheetcata|o_q.com/
