IRLR3105TRPBF ,55V Single N-Channel HEXFET Power MOSFET in a D-Pak packageFeatures
IRLR3105TRPBF
55V Single N-Channel HEXFET Power MOSFET in a D-Pak package
PD - 95553B
International
TOR Rectifier IF1LR3105PbF
- llRLU3105PbF
Features HEXFET® Power MOSFET
Logic-Level Gate Drive
Advanced Process Technology D
Ultra Low On-Resistance VDSS = 55V
175°C Operating Temperature
Fast Switching - A RDS(on) = 0.0379
Repetitive Avalanche Allowed up to ijax G
Lead-Free ID = 25A
Description
This HEXFEI® Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per silicon
area. Additional features of this design are a 175°C junction
operating temperature, fast switching speed and improved 14iit _1(,i,it
repetitive avalanche rating. These features combine to make this 'ctr l, ‘5 s"'
design an extremely efficient and reliable device for use in a wide l, N '
variety of applications.
The D-Pak is designed for surface mounting using vapor phase,
infrared, or wave soldering techniques. The straight lead version D-Pak I-Pak
(IRLU series) is for through-hole mounting applications. Power IRLR3105PbF lRLU3105PbF
dissipation levels up to 1.5 watts are possible in typical surface
mount applications.
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, Vss @ 10V 25
ID @ To = 100°C Continuous Drain Current, l/ss © 10V 18 A
IDM Pulsed Drain Current (D 100
PD ©Tc = 25°C Power Dissipation 57 W
Linear Derating Factor 0.38 W/°C
Vss Gate-to-Source Voltage 1 16 V
EAS Single Pulse Avalanche Energy© 61 mJ
EAs (tested) Single Pulse Avalanche Energy Tested Value© 94
IAR Avalanche Current© See Fig.12a, 12b, 15, 16 A
EAR Repetitive Avalanche Energy© mJ
dv/dt Peak Diode Recovery dv/dt © 3.4 V/ns
To Operating Junction and -55 to + 175
TSTG Storage Temperature Range "C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Thermal Resistance
Parameter Typ. Max. Units
Rout: Junction-to-Case - 2.65
ROJA Junction-to-Ambient (PCB mount)* - 50 °C/W
RQJA Junction-to-Ambient - 1 10
1
10/01/10
IRLR/U3105PbF
International
TOR Rectifier
Electrical Characteristics © Tg = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55 - - V Vss = 0V, ID = 250PA
M(BmDSS/ATJ Breakdown Voltage Temp. Coefficient - 0.056 - V/°C Reference to 25°C, ID = 1mA
. . . - 30 37 Vas =10V,ID = 15A ©
RDS(on) Static Drain-to-Source On-Resistance - 35 43 mf2 Vas = 5.0V, ID = 13A ©
Vesuh) Gate Threshold Voltage 1.0 - 3.0 V I/ras = VGS, ID = 250pA
gts Forward Transconductance 15 - - S I/os = 25V, ID = 15A©
loss Drain-to-Source Leakage Current : : 225% HA VS: __- i,tf,' V2: __- g, To = 150°C
Gate-to-Source Forward Leakage - - 200 Vss = 16V
less Gate-to-Source Reverse Leakage - - -200 nA Vas = -16V
% Total Gate Charge - - 20 ID = 15A
Qos Gate-to-Source Charge - - 5.6 nC I/ras = 44V
di Gate-to-Drain ("Miller") Charge - - 9.0 Vss = 5.0V, See Fig. 6 and 13
mm) Turn-On Delay Time - 8.0 - VDD = 28V
t, Rise Time - 57 -- ID = 15A
tdem) Turn-Off Delay Time - 25 - Rs = 249
tf Fall Time - 37 - Ves = 5.0V, See Fig. 10 ©
u, Internal Drain Inductance --- 4.5 -.-.- Between tad., D
6mm (0.25in.)
nH from package SQ: )
Ls Internal Source Inductance© - 7.5 - .
and center of die contact s
Ciss Input Capacitance - 710 - Vas = 0V
Coss Output Capacitance - 150 - Vos = 25V
Crss Reverse Transfer Capacitance - 28 - pF f = 1.0MHz, See Fig. 5
Cass Output Capacitance - 890 - Ves = 0V, I/os = 1.0V, f = 1.0MHz
Coss Output Capacitance - 110 - Vias = 0V, Vos = 44V, f = 1.0MHz
Cogs eff. Effective Output Capacitance s - 210 - VGs = 0V, 1has = 0V to 44V
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol D
. - - 25 .
(Body Diode) A showing the
ISM Pulsed Source Current - - 100 integral reverse G
(Body Diode) OD p-n junction diode. s
VSD Diode Forward Voltage - - 1.3 V Tu = 25°C, Is = 15A, Vss = 0V (D
trr Reverse Recovery Time -- 52 78 ns Tu = 25°C, IF = 15A, VDD = 28V
Qrr Reverse RecoveryCharge - 82 120 no di/dt = 1OOA/ps ©
ton Forward Turn-On Time Intrinsic turn-on time is negligible (tum-on is dominated by L3+LD)
* When mounted on 1" square PCB (FR-4 or G-10 Material) .
For recommended footprint and soldering techniques refer to application note #AN-994
Notes O)
through are on page 11
