IRLR3105 ,55V Single N-Channel HEXFET Power MOSFET in a D-Pak packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
IRLR3105TRPBF ,55V Single N-Channel HEXFET Power MOSFET in a D-Pak packageFeatures
IRLR3105
55V Single N-Channel HEXFET Power MOSFET in a D-Pak package
International
TOR Rectifier
Features
Logic-Level Gate Drive
Advanced Process Technology
Ultra Low On-Resistance
AUTOMOTIVE MOSFET
PD - 94510B
IRLR3105
lRLU3105
Fast Switching G
l 175°C Operating Temperature
Repetitive Avalanche Allowed up to Tjmax
Description
HEXFET® Power MOSFET
VDSS = 55V
A RDS(on) = 0.037Q
s ID = 25A
Specifically designed for Automotive applications, this HEXFET® Power
MOSFET utilizes the latest processing techniques to achieve extremely
low on-resistance per silicon area. Additional features of this design are
a 175°C junction operating temperature, fast switching speed and im-
proved repetitive avalanche rating . These features combine to make this
design an extremely efflcient and reliable device for use in Automotive
applications and a wide variety of other applications.
The D-Pak is designed for surface mounting using vapor phase, infrared, D-Pak I-Pak
or wave soldering techniques. The straight lead version (IRLU series) is IRLR3105 IRLU3105
for through-hole mounting applications. Power dissipation levels up to
1.5 watts are possible in typical surface mount applications.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 25
ID @ TC = 100°C Continuous Drain Current, I/ss @ 10V 18 A
IDM Pulsed Drain Current (D 100
Po @Tc = 25°C Power Dissipation 57 W
Linear Derating Factor 0.38 W/°C
VGS Gate-to-Source Voltage i 16 V
EAS Single Pulse Avalanche Energy© 61 mJ
EAS (tested) Single Pulse Avalanche Energy Tested Value© 94
IAR Avalanche Currents See Fig.12a, 12b, 15, 16 A
EAR Repetitive Avalanche Energy© mJ
dv/dt Peak Diode Recovery dv/dt © 3.4 V/ns
To Operating Junction and -55 to + 175
TSTG Storage Temperature Range "C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Thermal Resistance
Parameter Typ. Max. Units
ReJC Junction-to-Case - 2.65
ReJA Junction-to-Ambient (PCB mount)' - 50 "C/W
RQJA Junction-to-Ambient - 110
1
05/01 /03
IRLR/U3105
International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55 - - V VGS = 0V, ID = 250pA
AV
. . . - 30 37 1/Gs=10V,lD=15A ©
Roswn) Static Drain-to-Source On-Resistance - 35 43 mn VGS = 5.0V, ID = 13A ©
Vegan) Gate Threshold Voltage 1.0 - 3.0 V Vros = Was, ID = 250pA
9ts Forward Transconductance 15 - - S Vos = 25V, ID = 15A©
loss Drain-to-Source Leakage Current _- _- 22500 PA "),t . 22:17:; g, To = 150°C
Gate-to-Source Forward Leakage - - 200 VGS = 16V
less Gate-to-Source Reverse Leakage - - -200 nA VGs = -16V
% Total Gate Charge - - 20 ID = 15A
Qqs Gate-to-Source Charge - - 5.6 nC Vros = 44V
di Gate-to-Drain ("Miller") Charge - - 9.0 VGs = 5.0V, See Fig. 6 and 13
tdwn) Turn-On Delay Time - 8.0 - Yoo = 28V
tr Rise Time - 57 - ID = 15A
tdmff) Turn-Off Delay Time - 25 - Rs = 249
t, Fall Time - 37 - VGS = 5.0V, See Fig. 10 ©
u, Internal Drain Inductance - 4.5 - Between Igad, D
6mm (0.25in.)
nH G )
from package Q:
LS Internal Source Inductance© - 7.5 - and center of die contact S
Ciss Input Capacitance - 710 - VGs = 0V
Coss Output Capacitance - 150 - I/os = 25V
Crss Reverse Transfer Capacitance - 28 - pF f = 1.0MHz, See Fig. 5
Cass Output Capacitance - 890 - VGS = 0V, Vos = 1.0V, f = 1.0MHz
Coss Output Capacitance - 110 - VGs = 0V, Vos = 44V, f = 1.0MHz
Cass eff. Effective Output Capacitance © - 210 - Vss = 0V, Vros = 0V to 44V
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - 25 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - - 100 integral reverse G
(Body Diode) OD p-n junction diode. s
VSD Diode Forward Voltage - - 1.3 V To = 25°C, Is = 15A, VGS = 0V (D
trr Reverse Recovery Time - 52 78 ns T: = 25°C, IF = 15A, va, = 28V
Qrr Reverse RecoveryCharge - 82 120 nC di/dt = 100A/ps ©
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by LS+LD)
* When mounted on 1" square PCB (FR-4 or G-10 Material) .
For recommended footprint and soldering techniques refer to application note #AN-994
Notes co
through are on page 11
