IRLR2908TRPBF ,80V Single N-Channel HEXFET Power MOSFET in a D-Pak packageapplications.Absolute Maximum RatingsParameter Max. UnitsContinuous Drain Current, V @ 10V (Silicon ..
IRLR3103 ,30V Single N-Channel HEXFET Power MOSFET in a D-Pak packagePD - 91333EIRLR/U3103®HEXFET Power MOSFETl Logic-Level Gate DriveDl Ultra Low On-ResistanceV = 30VD ..
IRLR3103PBF ,30V Single N-Channel HEXFET Power MOSFET in a D-Pak packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
IRLR3103TR ,30V Single N-Channel HEXFET Power MOSFET in a D-Pak packagePD - 91333EIRLR/U3103®HEXFET Power MOSFETl Logic-Level Gate DriveDl Ultra Low On-ResistanceV = 30VD ..
IRLR3103TR ,30V Single N-Channel HEXFET Power MOSFET in a D-Pak packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
IRLR3103TRL ,30V Single N-Channel HEXFET Power MOSFET in a D-Pak packageapplications. D -PAK I-PAKThe D-PAK is designed for surface mounting using TO -252AA TO -251AAv ..
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IRLR2908TRPBF
80V Single N-Channel HEXFET Power MOSFET in a D-Pak package
International
TOR Rectifier
Features
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
PD - 95552B
llRLR2908PbF
IRLU2908PbF
Lead-Free
Description
Repetitive Avalanche Allowed up to ijax
HEXFET© Power MOSFET
VDSS = 80V
A RDS(0n) = 28mQ
I = 30A
This HEXFET © Power MOSFET utilizes the latest processing techniques
to achieve extreme
Iy low on-resistance per silicon area. Additional features
ofthis HEXFET power MOSFET are a 175°C junction operating temperature,
low ROJC, fast switching speed and improved repetitive avalanche rating.
These features combine to make this design an extremely efficient and
reliable device for use in a wide variety of applications.
The D-Pak is designed for surface mounting using vapor phase, infrared,
or wave soldering techniques. The straight lead version (IRFU series) is
for through-hole mounting applications. Power dissipation levels up to 1.5
watts are possible
Absolute Ma
in typical surface mount applications.
ximum Ratings
IRLR2908PbF IRLU2908PbF
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, Vss © 10V (Silicon Limited) 39 A
ID @ TC = 100°C Continuous Drain Current, Vss @ 10V (See Fig. 9) 28
ID @ TC = 25°C Continuous Drain Current, Vas @ 10V (Package Limited) 30
IDM Pulsed Drain Current C) 150
PD @Tc = 25°C Maximum Power Dissipation 120 W
Linear Derating Factor 0.77 W/°C
VGS Gate-to-Source Voltage 1 16 V
EAS Single Pulse Avalanche Energy (Thermally Limited) © 180 mJ
EAS (tested) Single Pulse Avalanche Energy Tested Value CO 250
IAR Avalanche Current CD See Fig.12a,12b,15,16 A
EAR Repetitive Avalanche Energy © m J
dv/dt Peak Diode Recovery dv/dt G) 2.3 V/ns
TJ Operating Junction and -55 to + 175 ''C
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Thermal Resistance
Parameter Typ. Max. Units
RBJC Junction-to-Case -- 1 .3 °C/W
ReJA Junction-to-Ambient (PCB Mount) - 40
ReJA Junction-to-Ambient - 110
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10/01/10
IRLR/U2908PbF
International
TOR Rectifier
Static © T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 80 - - V Vss = 0V, lo = 250pA
ABVDss/ATJ Breakdown Voltage Temp. Coefficient - 0.085 - V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance -- 22.5 28 mn Vss = 10V, ID = 23A ©
- 25 30 Vss = 4.5V, ID = 20A ©
VGS(th) Gate Threshold Voltage 1.0 - 2.5 V Vos = Vas, ID = 250pA
gfs Forward Transconductance 35 -- - S I/rss = 25V, ID = 23A
loss Drain-to-Source Leakage Current - - 20 pA Vos = 80V, Ves = 0V
- - 250 Vos = 80V, Vas = 0V, T, = 125°C
less Gate-to-Source Forward Leakage - - 200 nA Vss = 16V
Gate-to-Source Reverse Leakage - - -200 Vss = -16V
09 Total Gate Charge - 22 33 nC ID = 23A
095 Gate-to-Source Charge - 6.0 9.1 I/rss = 64V
di Gate-to-Drain ("Miller") Charge - 11 17 Vss = 4.5V
tam) Turn-On Delay Time - 12 - ns VDD = 40V
t, Rise Time - 95 - ID = 23A
td(off) Turn-Off Delay Time - 36 - Rs = 8.39
tf Fall Time - 55 - Vas = 4.5V ©
Lo Internal Drain Inductance - 4.5 - nH Between lead, a
6mm (0.25in.) K
Ls Internal Source Inductance - 7.5 - from package GXKQ>
and center of die contact s
Ciss Input Capacitance - 1890 --.- pF Vos = 0V
Coss Output Capacitance - 260 - Vos = 25V
Crss Reverse Transfer Capacitance - 35 - f = 1.0MHz, See Fig. 5
Coss Output Capacitance - 1920 - Vos = OV, Vos = 1.0V, f = 1.0MHz
Coss Output Capacitance - 170 - Vas = 0V, I/os = 64V, f = 1.0MHz
Coss eff. Effective Output Capacitance - 310 - Vas = 0V, Vos = 0V to 64V
Diode Characteristics
Parameter Min Typ. Max. Units Conditions
ls Continuous Source Current - --- 39 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - - 150 integral reverse G
(Body Diode) © p-n junction diode. S
Vso Diode Forward Voltage - - 1.3 V TJ = 25°C, ls = 23A, VGS = 0V ©
trr Reverse Recovery Time - 75 110 ns To = 25°C, IF = 23A, VDD = 25V
l Reverse Recovery Charge -- 210 310 nC di/dt = 1OOA/ps ©
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes co through are on page 11
HEXFET6 is a registered trademark of International Rectifier.
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