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IRLR2905TRLPBF-IRLR2905TRPBF
55V Single N-Channel HEXFET Power MOSFET in a D-Pak package
International
Tart, Rectifier
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve the lowest possible on-resistance per
silicon area. This benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs are well known for,
provides the designer with an extremely efficient device for use in a wide
Ultra Low On-Resistance
Surface Mount (IRLR2905)
Straight Lead (IRLU2905)
Advanced Process Technology
Fast Switching
Fully Avalanche Rated
Lead-Free
Logic-Level Gate Drive
PD- 95084A
IRLR/U2905PbF
HEXFET© Power MOSFET
VDSS = 55V
A RDS(on) = 0.02752
ID = 42AS
variety of applications.
The D-PAK is designed for surface mounting using vapor phase, infrared, or D-Pak
wave soldering techniques. The straight lead version (IRFU series) is for TO-252AA TO-251AA
through-hoie mounting applications. Power dissipation levels up to 1.5 watts
are possible in typical surface mount applications.
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, Vas @ 10V 42 s
ID © To = 100°C Continuous Drain Current, Vss @ 10V 30 A
IDM Pulsed Drain Current (D 160
pr, @Tc = 25°C PowerDissipation 110 W
Linear Derating Factor 0.71 W/°C
Ves Gate-to-Source Voltage 1 16 V
EAs Single Pulse Avalanche Energy© 210 m]
IAR Avalanche CurrentCD 25 A
EAR Repetitive Avalanche Energy0) 11 mJ
dv/dt Peak Diode Recovery dv/dt © 5.0 V/ns
TJ Operating Junction and -55 to + 175
Tsms StorageTemperature Range °C
Soldering Temperature, for 1 0 seconds 300 (1 .6mm from case)
Thermal Resistance
Parameter Typ. Max. Units
Flax: Junction-to-Case - 1 .4
ROJA Case-to-Ambient(PCB mount)" - 50 °CNV
RQJA Junction-to-Ambient - 110
** When mounted on 1" square PCB (FR-4 or G-10 Material ) .
For recommended footprint and soldering techniques refer to application note #AN-994
12/7/04
IRLR/U2905PbF
International
TOR Rectifier
Electrical Characteristics @ To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55 - - V Vss = 0V, ID = 250PA
AV
--- __- 0.027 Vss = 10V, ID = 25A (4)
Rosm) StaticDrain-to-Source On-Resistance _ _ 0.030 w Vss = 5.0V, ID = 25A ©
- - 0.040 l/ss = 4.0V, ID = 21A ©
VGS(th) Gate Threshold Voltage 1.0 - 2.0 V VDs = Vas, ID = 250pA
git Forward Transconductance 21 - - S Vos = 25V, ID = 25A©
loss Drain-to-Source LeakageCurrent : T, Ji, PA V: : 15:3 V2: : g, To = 1 50°C
less Gate-to-Source Forward Leakage - - 100 n A Vss = 16V
Gate-to-Source Reverse Leakage - - -1OO Vss = -16V
Qg Total Gate Charge - - 48 ID = 25A
Qgs Gate-to-Source Charge - - 8.6 nC Vos = 44V
di Gate-to-Drain ("Miller")Charge - - 25 Vss = 5.0V, See Fig. 6 and 13 COO)
tdmn) Turn-On Delay Time --.- 11 __.- VDD = 28V
t, Rise Time - 84 - ns ID = 25A
td(0ff) Turn-Off Delay Time - 26 - Ra = 3.49, l/tss = 5.0V
tf FallTime 15 RD=1.1Q,See Fig.10(9©
Lo Internal Drain Inductance - 4.5 - nH 22:73:23: E D)
from package G
Ls IntemaISource Inductance __- 7.5 --- and center of die contact© S
Ciss InputCapacitance - 1700 - VGs = 0V
Coss OutputCapacitance - 400 - pF VDs = 25V
Crss Reverse TransferCapacitance - 150 - f = 1.0MHz, See Fig. 5©
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol D
(Body Diode) - - 42 © A showing the
ISM Pulsed Source Current - - 160 integral reverse G
(Body Diode) (D p-n junction diode. s
VSD Diode Forward Voltage --.- --.- 1.3 V Tu = 25°C, Is = 25A, VGS = 0V 6)
tr, Reverse RecoveryTime - 80 120 ns To = 25°C, IF = 25A
Qrr Reverse RecoveryCharge - 210 320 nC di/dt = 100A/us (90)
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by LS+LD)
Notes:
co Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
© VDD = 25V,starting Tu = 25°C, L =470pH
Rs = 259., IAS-- 25A. (See Figure 12)
© Iso S 25A, di/dt S 270A/ps, VDD S V(BR)DSS:
TJs175°C
G) Pulse width 3 300ps; duty cycle S 2%.
(S) Caculated continuous current based on maximum allowable
junction temperature;
Package limitation current = 20A.
© This is applied for l-PAK, LS of D-PAK is measured between
lead and center of die contact.
© Uses IRL244N data and test conditions.
