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IRLR2905-IRLU2905
55V Single N-Channel HEXFET Power MOSFET in a D-Pak package
PD- 91334E
IRLR/U2905
HEXFET0 Power MOSFET
International
Tart, Rectifier
Logic-Level Gate Drive D
Ultra Low On-Resistance VDss = 55V
Surface Mount (IRLR2905)
Straight Lead (IRLU2905) - A RDS(on) = 00279
Advanced Process Technology G
Fast Switching Iro = 42AS
Fully Avalanche Rated s
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve the lowest possible on-resistance per
silicon area. This benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs are well known for,
provides the designer with an extremely efhcient device for use in a wide
variety of applications.
The D-PAK is designed for surface mounting using vapor phase, infrared, or D-Pak I-Pak
wave soldering techniques. The straight lead version (IRFU series) is for T0-252AA TO-MIAA
through-hole mounting applications. Power dissipation levels up to 1.5 watts
are possible in typical surface mount applications.
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, VGs @10V 42 ©
ID @ Tc = 100°C Continuous Drain Current, VGs @ 10V 30 A
IDM Pulsed Drain Current C) 160
Po @Tc = 25°C Power Dissipation 110 W
Linear Derating Factor 0.71 Wl°C
VGS Gate-to-Source Voltage 1 16 V
EAS Single Pulse Avalanche Energy© 210 m]
IAR Avalanche Current© 25 A
EAR Repetitive Avalanche Energy© 11 m]
dv/dt Peak Diode Recovery dv/dt © 5.0 V/ns
TJ Operating Junction and -55 to + 175
Tsms Storage Temperature Range cc
Soldering Temperature, for 1 0 seconds 300 (1 .6mm from case)
Thermal Resistance
Parameter Typ. Max. Units
ReJC Junction-to-Case - 1.4
ROJA Case-to-Ambient(PCB mount)" - 50 "CA/V
RQJA Junction-to-Ambient - 1 10
** When mounted on 1" square PCB (FR-4 or G-10 Material ) .
For recommended footprint and soldering techniques referto application note #AN-994
1
12/8/00
IRLR/U2905
International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source BreakdownVoltage 55 - - V VGs = 0V, ID = 250pA
AV
- - 0.027 VGS = 10V, ID = 25A ©
Roam) StaticDrain-to-Source On-Resistance - - 0.030 w Vss = 5_ov, k, = 25A ©
- - 0.040 VGs = 4.0V, ID = 21A ©
VGS(th) Gate Threshold Voltage 1.0 - 2.0 V Vos = Was, ID = 250pA
git Forward Transconductance 21 - - S Vos = 25V, ID = 25A©
loss Drain-to-Source LeakageCurrent _- _- Ji, pA x3: =- iix' V2: _- 8:: To = 1 50°C
less Gate-to-Source Forward Leakage - - 100 n A VGS = 16V
Gate-to-Source Reverse Leakage - - -100 VGs = -16V
% Total Gate Charge - - 48 ID = 25A
Qgs Gate-to-Source Charge - - 8.6 nC Vos = 44V
di Gate-to-Drain ("Miller")Charge - - 25 VGS = 5.0V, See Fig. 6 and 13 ©©
tom) Turn-On Delay Time - 11 - VDD = 28V
tr Rise Time - 84 - ns ID = 25A
td(off) Turn-Off Delay Time - 26 - Rs = 3.49, VGS = 5.0V
tf FallTime 15 RD: 1.19, See Fig. 10 COO)
u, Intemal Drain Inductance - 4.5 - nH 22:73:23: E D)
Ls IntemaISource Inductance - 7.5 - 22:1“ ciiizgfedie contact© s
Ciss InputCapacitance - 1700 - VGS = 0V
Coss OutputCapacitance - 400 - pF I/os = 25V
Crss Reverse Transfer Capacitance - 150 - f = 1.0MHz, See Fig. 50)
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol D
(Body Diode) - - 42 s A showing the
ISM Pulsed Source Current - - 160 integral reverse G
(Body Diode) (D p-n junction diode. s
VSD Diode Forward Voltage - - 1.3 V T: = 25°C, Is = 25A, VGS = 0V ©
trr Reverse Recovery Time - 80 120 ns T: = 25''C, IF = 25A
Q, Reverse RecoveryCharge - 210 320 nC di/dt = 100A/ps (90)
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by LS+LD)
Notes:
co Repetitive rating; pulse width limited by
max. junction temperature. ( See Rr 11 )
© VDD = 25V, starting TJ = 25°C, L =470pH
Rs = 259, IAS-- 25A. (See Figure 12)
© Iso S 25A, di/dt S 270Alps, VDD S V(BR)ross,
T J s: 175°C
© Pulse width 3 300ps; duty cycle 3 2%.
s Caculated continuous current based on maximum allowable
junction temperature;
Package limitation current = 20A.
© This is applied tor l-PAK, Ls of D-PAK is measured between
lead and center of die contact.
© Uses IRLZ44N data and test conditions.
