IRLR2703TRPBF ,30V Single N-Channel HEXFET Power MOSFET in a D-Pak packageapplications. Parameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ 1 ..
IRLR2703TRPBF ,30V Single N-Channel HEXFET Power MOSFET in a D-Pak package Logic-Level Gate Drive Ultra Low On-ResistanceDV = 30V ..
IRLR2705 ,55V Single N-Channel HEXFET Power MOSFET in a D-Pak packageapplications. Parameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ 1 ..
IRLR2705PBF ,55V Single N-Channel HEXFET Power MOSFET in a D-Pak packageapplications. D-Pak I-PakThe D-PAK is designed for surface mounting using vapor phase, infrare ..
IRLR2705TR ,55V Single N-Channel HEXFET Power MOSFET in a D-Pak packageapplications. Power dissipation levels up to 1.5 wattsare possible in typical surface mount
IRLR2705TRL ,55V Single N-Channel HEXFET Power MOSFET in a D-Pak package Logic-Level Gate DriveD Ultra Low On-Resistance V = 55VDS ..
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IRLR2703TRPBF
30V Single N-Channel HEXFET Power MOSFET in a D-Pak package
International
Tart, Rectifier
Lead-Free
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve the lowest possible on-resistance per
silicon area. This benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs are well known for,
provides the designer with an extremely efficient device for use in a wide
Logic-Level Gate Drive
Ultra Low On-Resistance
Surface Mount (IRLR2703)
Straight Lead (IRLU2703)
Advanced Process Technology
Fast Switching
Fully Avalanche Rated
PD- 95083A
IRLR/U2703PbF
HEXFET© Power MOSFET
VDSS = 30V
A RDS(on) = 0.045Q
s ID = 23AS
variety of applications.
The D-PAK is designed for surface mounting using vapor phase, infrared, or D-Pak
wave soldering techniques. The straight lead version (IRFU series) is for TO-252AA TO-251AA
through-hoie mounting applications. Power dissipation levels up to 1.5 watts
are possible in typical surface mount applications.
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, Vas @ 10V 23 s
ID @ To = 100°C Continuous Drain Current, Vss © 10V 16 A
IDM Pulsed Drain Current Ci) 96
pr, ©Tc = 25''C Power Dissipation 45 W
Linear Derating Factor 0.30 W/°C
Ves Gate-to-Source Voltage 1 16 V
EAS Single Pulse Avalanche Energy© 77 m]
IAR Avalanche CurrentCD 14 A
EAR Repetitive Avalanche Energy© 4.5 mJ
dv/dt Peak Diode Recovery dv/dt © 5.0 V/ns
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Thermal Resistance
Parameter Typ. Max. Units
Flax: Junction-to-Case - 3.3
ROJA Case-to-Ambient (PCB mount)" - 50 °C/W
RQJA Junction-to-Ambient - 1 10
** When mounted on 1" square PCB (FR-4 or G-10 Material ) .
For recommended footprint and soldering techniques refer to application note #AN-994
1
12/6/04
IRLR/U2703PbF
International
TOR Rectifier
Electrical Characteristics © Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 30 - - V Vas = 0V, ID = 250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.030 - V/°C Reference to 25°C, ID = 1mA
. _ . - - 0.045 Vas =10V, ID =14A ©
RDS(on) Static Drain-to-Source On-Resistance - - 0.065 Q Vss = 4.5V, ID = 12A (9
Vegan) Gate Threshold Voltage 1.0 - - V Vos = Vas, ID = 250PA
gfs Forward Transconductance 6.4 - - S Vros = 25V, ID = 14A©
loss Drain-to-Source Leakage Current - - 25 pA VDS = 30V, Vss = 0V
- - 250 Vos = 24V, Vas = 0V, TJ = 150°C
less Gate-to-Source Forward Leakage - - 100 nA VGS = 16V
Gate-to-Source Reverse Leakage - - -100 l/ss = -16V
% Total Gate Charge - - 15 ID = 14A
095 Gate-to-Source Charge - - 4.6 nC VDs = 24V
di Gate-to-Drain ("Miller") Charge .--- -- 9.3 Viss = 4.5V, See Fig. 6 and 13 ©©
tdem) Turn-On Delay Time - 8.5 - VDD = 15V
tr Rise Time - 140 - ns ID = 14A
td(0ff) Turn-Off Delay Time - 12 - Rs = 129, Vas = 4.5V
tf Fall Time 20 RD = 1.09, See Fig. 10 (90)
. Between lead, D
u, Internal Drain Inductance --.- 4.5 --.- nH 6mm (0.25in.) E )
from package a
Ls Internal Source Inductance - 7.5 - and center of die contact© S
Ciss Input Capacitance - 450 - Vss = 0V
Cass Output Capacitance - 210 - pF Vos = 25V
Crss Reverse Transfer Capacitance - 110 - f = 1.0MHz, See Fig. 5©
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol D
(Body Diode) - - 23 © A showing the
ISM Pulsed Source Current integral reverse G
(Body Diode) (D - - 96 p-n junction diode. s
VSD Diode Forward Voltage - - 1.3 V Tu = 25°C, Is = 14A, Vss = 0V G)
trr Reverse Recovery Time - 65 97 ns To = 25°C, IF = 14A
Qrr Reverse RecoveryCharge - 140 210 nC di/dt = 1OOA/ps (9()
ton Forward Turn-On Time Intrinsic turn-on time is negligible (tum-on is dominated by LS+LD)
Notes:
co Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
© VDD = 15V, starting TJ = 25°C, L =570pH
Rs = 259, IAS = 14A. (See Figure 12)
© ISDS 14A, di/dt S 140/Vps, VDD S V(BH)DSS:
Tus 175°C
© Pulse width 3 300ps; duty cycle S 2%.
(S) Caculated continuous current based on maximum allowable
junction temperature;
Package limitation current = 20A.
© This is applied for I-PAK, Ls of D-PAK is measured
lead and center of die contact.
between
© Uses IRL2703 data and test conditions.
