IRLR120 ,100V Single N-Channel HEXFET Power MOSFET in a D-Pak packageapplications.
Absolute Maximum Ratings
IRLU120
D- PAK
TO,252AA
l-PAK
TO-251AA
__-, ..
IRLR120N ,N-channel power MOSFET / 100V / 10APD - 91541BIRLR/U120N®HEXFET Power MOSFETl Surface Mount (IRLR120N)Dl Straight Lead (IRLU120N)V = 1 ..
IRLR120NTR ,100V Single N-Channel HEXFET Power MOSFET in a D-Pak packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
IRLR120TR ,100V Single N-Channel HEXFET Power MOSFET in a D-Pak packageInternational
IEQR
Rectifier
PD-9.636A
|RLR120
HEXFET® Power MOSFET
. Dynamic dv/ ..
IRLR130A ,Power MOSFET
IRLR230A ,Power MOSFET
ISPLSI2032-110LT48 , In-System Programmable High Density PLD
ISPLSI2032-135LJ , In-System Programmable High Density PLD
ISPLSI2032-135LJ , In-System Programmable High Density PLD
ISPLSI2032-135LT44 , In-System Programmable High Density PLD
ISPLSI2032-135LT44 , In-System Programmable High Density PLD
ISPLSI2032-150LJ , In-System Programmable High Density PLD
IRLR120-IRLR120TR
100V Single N-Channel HEXFET Power MOSFET in a D-Pak package
International
Rectifier
HEXFET® Power MOSFET
- . I‘K‘Hhs': ' 75-»-
-9.636A
TILR120
IRLU120
0 Dynamic dv/dt Rating
o Repetitive Avalanche Rated V - 100V
o Surface Mount (IRLR120) DSS -
0 Straight Lead (IRLU120)
0 Available in Tape & Reel RDS(on) = 0.279
0 Logic-Level Gate Drive'
0 RDs(0n)Specified at Ves=4V & 5V ID = 7.7A
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness,
The D-Pak is designed for surface mounting using vapor phase, infrared, or
wave soldering techniques. The straight lead version (IRFU series) is for
through-hole mounting applications. Power dissipation levels up to 1.5 watts
are possible in typical surface mount applications. D-PAK l-PAK
TO,252AA TO-251AA
Absolute Maximum Ratings
'----i-e-r-----s-- am - Paramei Mgg‘fiéf+"i - 571%”
lo @ To = 25°C Centihuous Drain Current, l/ss © 5.0 v 7.7
ID @ To = 100°C Continuous Drain Current, l/ss @ 5.0 V 4.9 A
m Pulsed DrEEEUEEEwt Ci) - 31
33 g .19 ___--fyjffi_2'.tvttr Dissipation 42 W
PD @ TA: 25°C Power Dissipation (PCB Mount)" 2.5 -
a_v_| .Li.near Derating Factor H 0.33 W P C
Linear Derating Factor (PCB Mount) 0.020
Vai; Gate-to-Source Volt_alg_e_ $10 V
EAS Single Pulse Avalanche Energy © 210 ml
|AR Avalanche Current (f) 7.7 A
EAR - Repetitive Avalanche Energy (D 4.2 mJ
dv/dt Peak Diode Recovery dv/dt O 5.5 V/ns
Tv, Tsrs Junction and Storage Temperature Range -55 to +150 0 C
Soldering Temperature, for 10 seconds 260 (1.6mm from case) i __]
Thermal Resistance
Firm¥Vfr.r.—k7 Parameter Min. Typ. Max. Units
Redo Junction-to-Case - - 3.0
3% ---_-_-_-. :I_L£1_ct_icih-to-Ambient (PCB mount)" - - 50 °C/W
RBJA - Junction-to-Ambient - - 1 110
.. When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994.
20, |RLU120
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter -- lrhip., It, Ma): £nit_s Test Conditions
meoss Drain-to-Source Breakdown Voltage 100 4 - - V VGS=0V, ID: 250PA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.18 :W )ffTr_fVorence to 25°C, 10: 1mA
RDS(on) Static Drain-to-Source On-Resistance - - 0.27 Q _ _r(ese-Et1, b=4.6A co
- - 0.38 VG3=4.OV, 10:3.9A ©
l/asm Gate Threshold Voltage 1.0 - 2.0 V VD3=VGS, lo: 250HA
gts Forward Transconductance 4.4 - - S VDs=50V, 10:4.6A co
loss Drain-to-Source Leakage Current - - 25 11A VDs=100V, VGS=OV
- - 250 VDs=80V, VGs=0V, TJ=125°C
less Gate-to-Source F_rothviy1t,-ek_aSe - - 100 n A Vss--10V
Gate-to-Source Reverse Leakage - - -1OO Vss=-10V
'R-ir-'""'-"-)--;''''; "er-GF--" _ '1' _ “I "IST''":..;'.';
Qgs Gate-to-Source Charge - - 3.0 nC Vos=80V
di Gate-to-Drain ("MilltrlLCErCe, - - 7.1 VGs=5.OV See Fig. 6 and 13 ©
E(on) Turn-On Delay Time _ -,_r-rr_.d,rf, _-:__ Voo=50V
t, Rise Time ___I "“fi_fi_ -- 64 - ns lo=9.2A
Idiom Turn-Off Delay Time - 21 - Rs=9.0n
tr Fall Time - 27 1 - RD=5.2Q See Figure 10 ©
Lo Internal Drain inductance - 4.5 - , $3 g1: ') l D
nH from package (3Q
Ls Internal Source Inductance - 7.5 - and center of
die contact s
Gigs Input Capacitance - 490 - VGs=0V
Coss Output Capacitance - 150 - pF Vos=251/
Crss Reverse Transfer Capacitance - 30 - f=1.0MHz See Figure 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units 1 Test Conditions
Is Continugus Source Current - - 7.7 MOSEET symbol D
(Body Diode) A showing the (ri)
ISM Pulsed Source Current __ _ 31 integral 5""Y G trl
(Body Diode) CO p-n junction diode. s
Vso Diode Forward Voltage - - 2.5 V TJ=25°C, Is=7.7A, Veszov ©
tn Reverse Recovery Time - 110 140 ns TJ=250C, IF=9.2A
Orr Reverse Recovery Charge - 0.80 1.0 11C di/dt=100A/ws ©
ton Forward Turn-On Time Intrinsic turn-on time is neglegibie (turn-on is dominated by Ls+LD)
Notes:
co Repetitive rating; pulse width limited by
max. junction temperature (See Figure 11)
C2) VDD=25V, starting TJ=25°C, L=5.3mH
Re=25§2, IAs=7.7A (See Figure 12)
TJS150°C
© ISDSQ2A, di/de110/Ws, VDDSV(BR)Dss,
CO Pulse width C 300 Vs; duty cycle 32%.
