IRLR110 ,100V Single N-Channel HEXFET Power MOSFET in a D-Pak packagePD-9.633A
IRLRHO
IlRLU110
lLe'taatitrmal
TOR Rectifier
HEXFET6 Power MOSFET
. Dynamic ..
IRLR110A ,Power MOSFET
IRLR110A ,Power MOSFET
IRLR110TR ,100V Single N-Channel HEXFET Power MOSFET in a D-Pak packageapplications.
Absolute Maximum Ratings
D-PAK
T0-252AA
l- PAK
TO-251AA
Parameter Max. ..
IRLR120 ,100V Single N-Channel HEXFET Power MOSFET in a D-Pak packageapplications.
Absolute Maximum Ratings
IRLU120
D- PAK
TO,252AA
l-PAK
TO-251AA
__-, ..
IRLR120N ,N-channel power MOSFET / 100V / 10APD - 91541BIRLR/U120N®HEXFET Power MOSFETl Surface Mount (IRLR120N)Dl Straight Lead (IRLU120N)V = 1 ..
ISPLSI2032-110LT44 , In-System Programmable High Density PLD
ISPLSI2032-110LT44 , In-System Programmable High Density PLD
ISPLSI2032-110LT48 , In-System Programmable High Density PLD
ISPLSI2032-135LJ , In-System Programmable High Density PLD
ISPLSI2032-135LJ , In-System Programmable High Density PLD
ISPLSI2032-135LT44 , In-System Programmable High Density PLD
IRLR110-IRLR110TR
100V Single N-Channel HEXFET Power MOSFET in a D-Pak package
ktterrtationall
1:212 Rectifier
HEXFET® Power MOSFET
o Dynamic dv/dt Rating
0 Repetitive Avalanche Rated
0 Surface Mount (IRLR1 10)
0 Straight Lead (lfRLU110)
o Available in Tape & Reel
0 Logic-Level Gate Drive
0 RDs(on) Specified at VGs=4V & 5V
Description
Third Generation HEXFETS from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
PD-9.633A
IRLRHO
"RLU110
RDS(on) =
S lo =4.3A
l/DSS = 100V
on-resistance and cost-effectiveness.
The D-Pak is designed for surface mounting using vapor phase, infrared, or
wave soldering techniques. The straight lead version (IRFU series) is for
through-hole mounting applications Power dissipation levels up to 1.5 watts
r-tasf))
are possible in typical surface mount applications. D-PAK LPAK
T0-252AA TO-251AA
Absolute Maximum Ratings
Parameter Max. Units
lo @ To T'.'." 25°C Continuous Drain Current, VGS @ 5.0 V 4.3
In © Tc = 100°C Continuous Drain Current, Vas © 5.0 V 2.7 A
IDM Pulsed Drain Current Ci) 17
Po @ Tc = 25°C Power Dissipation 25 W
Po © TA = 25°C Power Dissipation (PCB Mount)" 2.5
Linear Derating Factor 0.20 W /° C
Linear Derating Factor (PCB Mount)" 0.020
Vas Gate-to-Source Voltage :10 V
EAS Single Pulse Avalanche Energy © 100 mJ
IAR Avalanche Current co 4.3 A
EAR Repetitive Avalanche Energy C) 2.5 md
dv/dt Peak Diode Recovery dv/dt © 5.5 V/ns
TJ, TSTG Junction and Storage Temperature Range -55 to +150 "C
Soldering Temperature, for 10 seconds 260 (1.6mm from case) l
Thermal Resistance
Parameter Min. - Typ, Max. Units
Rac Junction-to-Case - - 5.0
Rm Junction-to-Ambient (PCB mount)" - 50 °C/W
Ram Junction-to-Ambient - - 1 10
** When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques referto application note #AN-994.
IO, iRLU110
Electrical Characteristics © TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Test Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 100 - - V VGs=0V, ID: 250pA
AV(BR)DSs/ATJ Breakdown Voltage Temp. Coefficient - 0.12 - VPC Reference to 25°C, Ire. 1mA
RDS(on) Static Drain-to-Source On-Resistance - - 0.54 Q Vt3s--5.OV, br.2.6A ©
- - th76 Vss=4.0V, |D=2.2A ©
VGS(th) Gate Threshold Voltage 1 .0 - 2.0 V N/osr=Vss, ID: 25OWA
gfs Forward Transconductance 2.3 - - S Vos=50V, b=2.6A co
loss Drain-to-Source Leakage Current - - 25 WA VDS=1OOV’ Vss=OV
- -...'. 250 VDs=80V, Ves=0V, TJ=125°C
'less Gate-to-Source Forward Leakage - - 100 n A VGS=10V
Gate-to-Source Reverse Leakage - - -100 VGs=-10V
ch Total Gate Charge - - 6.1 b--G.6A
Qgs Gate-to-Source Charge - - 2.0 nC Vos=80V
di Gate-to-Drain ("Miller") Charge - - 3.3 Ves=5.0V See Fig. 6 and 13 ©
tdwn) Turn-On Delay Time - 9.3 - VDD=50V
tr Rise Time - 47 - ns |D=5.6A
tam) Turn-Off Delay Time - 16 - Rs--12n
tr Fall Time - 17 - Ro=8.4£2 See Figure 10 (9
Ln Internal Drain Inductance - 4.5 - E (mfg 2'21 ') D
nH from package G@>
Ls Internal Source Inductance - 7.5 - Ind center of
die contact s
Ciss Input Capacitance - 250 - 1/tasr--OV
%ss Output Capacitance - 80 - pF Vos=25V
Crss Reverse Transfer Capacitance - 15 - f=1.0MHz See Figure 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
Is Continuous Source Current - - 4 3 MOSFET symbol D
(Body Diode) . A showing the a if“)
ISM Pulsed Source Current - _ 17 integral reverse t3 (tod,
(Body Diode) G) p-n junction diode. s
VsD Diode Forward Voltage - - 2.5 V TJ=25°C, Is=4.3A, Vss=0V ©
tn Reverse Recovery Time - 100 _ 130 ns TJ=25°C, IF=5.6A "
l Reverse Recovery Charge - 0.50 0.65 no dildt=100Alps G)
ton Forward Turn-On Time Intrinsic turn-on time is neglegible (turn-on is dominated by Ls+LD)
Notes:
OD Repetitive rating; pulse width limited by
max. junction temperature (See Figure 11)
© VDD=25V, starting TJ=25°C, L=8.1mH
RG=25§2, |As=4.3A (See Figure 12)
© ISDSSBA, di/dts140A/us, VDDSV(BR)Dss,
TJS150°C
(40 Pulse width s; 300 us; duty cycle 32%.
