IRLR024ZTRLPBF ,55V Single N-Channel HEXFET Power MOSFET in a D-Pak packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
IRLR110 ,100V Single N-Channel HEXFET Power MOSFET in a D-Pak packagePD-9.633A
IRLRHO
IlRLU110
lLe'taatitrmal
TOR Rectifier
HEXFET6 Power MOSFET
. Dynamic ..
IRLR110A ,Power MOSFET
IRLR110A ,Power MOSFET
IRLR110TR ,100V Single N-Channel HEXFET Power MOSFET in a D-Pak packageapplications.
Absolute Maximum Ratings
D-PAK
T0-252AA
l- PAK
TO-251AA
Parameter Max. ..
IRLR120 ,100V Single N-Channel HEXFET Power MOSFET in a D-Pak packageapplications.
Absolute Maximum Ratings
IRLU120
D- PAK
TO,252AA
l-PAK
TO-251AA
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ISPLSI2032-110LT44 , In-System Programmable High Density PLD
ISPLSI2032-110LT44 , In-System Programmable High Density PLD
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ISPLSI2032-135LJ , In-System Programmable High Density PLD
ISPLSI2032-135LJ , In-System Programmable High Density PLD
IRLR024ZTRLPBF
55V Single N-Channel HEXFET Power MOSFET in a D-Pak package
International
152R Rectifier
Features
Logic Level
Lead-Free
Description
This HEXFET6 Power MOSFET utilizes the latest
processing techniques to achieve extremely low on-
resistance per silicon area. Additional features ofthis
design area175°Cjunction operatingtemperature,
fast switching speed and improved repetitive
avalanche rating .These features combine to make
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to ijax
PD - 95773B
IRLR024ZPbF
IRLU024ZPbF
HEXFET®PowerMOSFET
VDSS = 55V
RDS(on) = 58mQ
ID: 16A
tiii,,)),
this design an extremely efficientand reliabledevice D-Pak l-Pak
for use in a wide variety of applications. IRLR024ZPbF IRLU024ZPbF
Absolute Maximum Ratings
Parameter Max. Units
ID © Tc = 25°C Continuous Drain Current, Vas @ 10V (Silicon Limited) 16
ID @ To = 100°C Continuous Drain Current, Vas @ 10V 11 A
IDM Pulsed Drain Current CD 64
PD @TC = 25°C Power Dissipation 35 W
Linear Derating Factor 0.23 W/°C
VGS Gate-to-Source Voltage i 16 V
EAS(Therrnaoyvmited) Single Pulse Avalanche Energy© 25 mJ
EAS(Tested ) Single Pulse Avalanche Energy Tested Value © 25
IAR Avalanche Current C) See Fig.12a, 12b, 15, 16 A
EAR Repetitive Avalanche Energy © mJ
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range "C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Thermal Resistance
Parameter Typ. Max. Units
ReJC Junction-to-Case -- 4.28
ReJA Junction-to-Ambient (PCB mount) © - 40 °C/W
ReJA Junction-to-Ambient - 110
HEXFET® is a registered trademark of International Rectifier.
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IRLR/U024ZPbF
International
TOR Rectifier
Electrical Characteristics tti) To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55 - - V Vas = 0V, ID = 250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.053 - V/°C Reference to 25°C, ID = 1mA
- 46 58 Vos = 10V, ID = 9.6A ©
RDS(on) Static Drain-to-Source On-Resistance - - 80 mn Vss = 5.0V, ID = 5.0A ©
- - 100 Vas = 4.5V, b = 3.0A ©
VGS(th) Gate Threshold Voltage 1.0 - 3.0 V Vos = Vss, ID = 250pA
gfs Forward Transconductance 7.4 - - S Vos = 25V, ID = 9.6A
loss Drain-to-Source Leakage Current - --- 20 PA Vos = 55V, Ves = 0V
- - 250 Vos = 55V, Vas = 0V, T, = 125°C
less Gate-to-Source Forward Leakage - - 200 nA Vss = 16V
Gate-to-Source Reverse Leakage - - -200 Vss = -16V
A Total Gate Charge - 6.6 9.9 b = 5.0A
Qgs Gate-to-Source Charge - 1.6 - nC Vos = 44V
di Gate-to-Drain ("Miller") Charge - 3.9 - Vas = 5.0V (3)
tom Turn-On Delay Time - 8.2 - VDD = 28V
t, Rise Time - 43 - ID = 5.0A
tom Turn-Off Delay Time - 19 - ns Rs = 28 Q
t, Fall Time - 16 - Vss = 5.0V ©
u, Internal Drain Inductance - 4.5 - Between lead, D
nH 6mm (0.25in.) ir, "
Ls Internal Source Inductance - 7.5 - from package 63L - "
and center of die contact s
Ciss Input Capacitance - 380 - Vas = 0V
Coss Output Capacitance - 62 - Vos = 25V
Crss Reverse Transfer Capacitance - 39 - pF f = 1.0MHz
Coss Output Capacitance --.- 180 --.- l/ss = OV, Vos = 1.0V, f = 1 .OMHz
Coss Output Capacitance - 50 - Vas = 0V, Vos = 44V, f = 1.0MHz
Coss eff. Effective Output Capacitance - 81 - Vas = 0V, VDS = 0V to 44V Cr)
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current - - 16 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - - 64 integral reverse G
(Body Diode) © p-n junction diode. S
VSD Diode Forward Voltage - - 1.3 V TJ = 25°C, ls = 9.6A, vss = 0V ©
trr Reverse Recovery Time - 16 24 ns TJ = 25°C, IF = 9.6A, VDD = 28V
Qrr Reverse Recovery Charge - 11 17 nC di/dt = 100A/ps ©
ton Forward Turn-On Time Intrinsic turn-on time is negligible (tum-on is dominated by LS+LD)
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