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IRLR024-IRLR024TR
60V Single N-Channel HEXFET Power MOSFET in a D-Pak package
International
IééR Rectifier
PD-9.625A
IRLR024
HEXFETO Power MOSFET
0 Dynamic dv/dt Rating
0 Surface Mount (IRLR024)
q Straight Lead (IRLU024)
o Available in Tape & Reel
0 Logic-Level Gate Drive
o RDS(on) Specified at VGs=4V & 5V
o FastSwitching
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
IRLU024
RDS(on) =
ID = 14A
I/oss--- 60V
on-resistance and cost-effectiveness.
The D-Pak is designed for surface mounting using vapor phase, infrared, or
wave soldering techniques. The straight lead version (IRFU series) is for
through-hole mounting applications. Power dissipation levels up to 1.5 watts
are possible in typical surface mount applications.
'tif,"-'):
'e';''),
'I ”:1
D-PAK l-PAK
TO-252AA TO-251AA
Absolute Maximum Ratings
5 Parameter Max. Units
ID @ Tc = 25°C l Continuous Drain Current, I/ss © 5.0 v 14
[D @ Tc = 100°C Continuous Drain Current, Vas @ 5.0 V 9.2 A
IDM Pulsed Drain Current C) 56
Pro @ Tc = 25°C Power Dissipation 42 W
Po @ TA = 25°C Power Dissipation (PCB Mount)" 2.5
Linear Derating Factor 0.33 W PC
Linear Derating Factor (PCB Mount)" 0.020
VGs Gate-to-Source Voltage :10 V
EAs Single Pulse Avalanche Energy 2 91 md
dv/dt Peak Diode Recovery dv/dt co 4.5 V/ns
Tu, TSTG Junction and Storage Temperature Range -55 to +150 °C
Soldering Temperature, for 10 seconds 260 (1.6mm from case)
Thermal Resistance
Parameter Min. Typ. Max. Units
Rmc Junction-to-Case - - 3.0
Ram Junction-to-Ambient (PCB mount)" - - 50 °C/W
ROJA Junction-to-Ambient - - 110
** When mounted on 1" square PCB (FR-4 or G-1O Material).
For recommended footprint and soldering techniques refer to application note #AN-994.
IRLR024, IRLUO24
Electrical Characteristics Iii) To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Test Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 60 - - V Vss=OV, ID: 250PA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.068 - VPC Reference to 25°C, ID: 1mA
RDS(on) Static Drain-to-Source On-Resistance - - 0,10 n Vss---5.OV, Io-MMA ©
- - 0.14 VGs=4.0V, ln=7.0A co
VGS(th) Gate Threshold Voltage 1.0 - 2.0 V Vos=VGs, ID: 250PA
grs Forward Transconductance 7.3 - - S VDs=25V, 10:8.4A ©
loss Drain-to-Source Leakage Current - - 25 pA VDs--60V, Var-HN
- - 250 VDs=48V, VGs=0V, TJ=125°C
fess Gate-to-Source Fotward Leakage - ._. 100 n A Vas---10V
Gate-to-Source Reverse Leakage - - -100 Ves=-10V
th Total Gate Charge - - 18 19:17A
Qgs Gate-to-Source Charge - - 4.5 " Vos=48V
di Gate-to-Drain ("Miner") Charge - - 12 Ves=5.0V See Fig. 6 and 13 GD
tum) Turn-On Delay Time - 11 - VDD=30V
t, Rise Time - 110 - ns lo=17A
tdm Turn-Off Delay Time - 23 - Re=9.0§2
t1 Fall Time - 41 - Ro=1.7n See Figure 10 ©
Ln Internal Drain Inductance - 4.5 - tr11gi'0ntiti1nd.') Hi)
nH from package SQ:
Ls Internal Source Inductance - 7.5 - Ind center of
die contact s
Ciss Input Capacitance - 870 - Ves=0V
Coss Output Capacitance - 360 - PF Vns=25V
Crss Reverse Transfer Capacitance - 53 - f=1.0MHz See Figure 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
ls Continuous Source Current - - 14 MOSFET symbol D
(Body Diode) A showing the ',ri'r
ISM Pulsed Source Current - - 56 integral reverse G 11L
(Body Diode) Ci) p-n junction diode. s
Vso Diode Forward Voltage - - 1.5 V TJ=25°C, 15:14A. Vas=0V ©
tn Reverse Recovery Time - 130 260 ns TJ=25°C, |F=17A
er Reverse Recovery Charge - 0.75 1.5 wc di/dt=100A/ps ©
ton Forward Turn-On Time Intrinsic turn-on time is neglegible (turn-on is dominated by Ls+LD)
Notes:
C) Repetitive rating; pulse width limited by
max. junction temperature (See Figure 11)
Q) Voo=25V, starting TJ=25°C, L=541pH
RG=25§2. lAs=14A (See Figure 12)
© ISDS17A, di/dtS140A/us, VDDSV(BR)Dss,
TJS150°C
© Pulse width S. 300 us; duty cycle 52%.
