IRLR014NTRPBF ,55V Single N-Channel HEXFET Power MOSFET in a D-Pak packageapplications. Parameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ 1 ..
IRLR014TR ,60V Single N-Channel HEXFET Power MOSFET in a D-Pak packagePD-9.624A
International
TOR Rectifier IRLR014
HEXFETOD Power MOSFET IR LU O1 4
q Dynamic ..
IRLR014TR ,60V Single N-Channel HEXFET Power MOSFET in a D-Pak packageapplications. Power dissipation levels up to 1.5 watts
are possible In typical surface mount
IRLR014TRLPBF , Power MOSFET
IRLR014TRLPBF , Power MOSFET
IRLR014TRPBF , Power MOSFET
ISPLSI1048E-50LT , In-System Programmable High Density PLD
ISPLSI1048E70LQ , In-System Programmable High Density PLD
ISPLSI1048E-70LQ , In-System Programmable High Density PLD
ISPLSI1048E-70LQ , In-System Programmable High Density PLD
ISPLSI1048E-70LQ , In-System Programmable High Density PLD
ispLSI1048E-70LQI , In-System Programmable High Density PLD
IRLR014NTRPBF
55V Single N-Channel HEXFET Power MOSFET in a D-Pak package
International
TOR Rectifier
Logic-Level Gate Drive
PD - 95551 B
IRLR014NPbF
IRLU014NPbF
HEXFET© Power MOSFET
Surface Mount (IRLR024N)
Straight Lead (IRLU024N)
Advanced Process Technology
Fast Switching
Fully Avalanche Rated
Lead-Free
Description
VDSS = 55V
RDS(on) = 0.149
s ID--10A
Fifth Generation HEXFETs from International Rectifier utilize
advanced processing techniques to achieve the lowest
possible on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
device for use in a wide variety of applications.
The D-PAK is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU series) is for through-hole mounting
applications. Power dissipation levels up to 1.5 watts are
possible in typical surface mount applications.
Absolute Maximum Ratings
slf,i,)ti), sii,iit 's.
D-Pak l-Pak
lRLR014NPbF IRLU014NPbF
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, Vas © 10V 10
ID @ To = 100°C Continuous Drain Current, Vss © 10V 7.1 A
IDM Pulsed Drain Current (D 40
pr, ©Tc = 25''C Power Dissipation 28 W
Linear Derating Factor 0.2 W/°C
Ves Gate-to-Source Voltage 1 16 V
EAS Single Pulse Avalanche Energy© 35 md
IAR Avalanche CurrentCD 6.0 A
EAR Repetitive Avalanche EnergyC0 2.8 mJ
dv/dt Peak Diode Recovery dv/dt © 5.0 V/ns
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Thermal Resistance
Parameter Typ. Max. Units
ReJC Junction-to-Case - 5.3
ROJA Case-to-Ambient (PCB mount)" - 50 °CNV
RQJA Junction-to-Ambient - 1 10
** When mounted on 1" square PCB (FR-4 or G-10 Material ) .
For recommended footprint and soldering techniques refer to application note #AN-994
1
10/01/10
IRLR/U014NPbF
International
TOR Rectifier
Electrical Characteristics © Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55 - - V Vas = 0V, ID = 250pA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coefficient - 0.056 - V/°C Reference to 25°C, ID = 1mA
. . . - - 0.14 Vss--10V,lD=6A©
RDS(on) Static Drain-to-Source On-Resistance - - 0.21 Q l/ss = 4.5V, ID = 5 A 6)
Vegan) Gate Threshold Voltage 1.0 - -- V VDs = Vas, ID = 250uA
gfs Forward Transconductance 3.1 - - S Vos = 25V, ID = 6A©
loss Drain-to-Source Leakage Current _- _- 22550 pA [tt : ii") 'tt : g, TJ = 150°C
less Gate-to-Source Forward Leakage - - 100 n A I/ss = 16V
Gate-to-Source Reverse Leakage - - -100 Vss = -16V
% Total Gate Charge - - 7.9 ID = 6A
Qgs Gate-to-Source Charge - - 1.4 nC Vos = 44V
di Gate-to-Drain ("Miller") Charge - - 4.4 Vas = 5.0V, See Fig. 6 and 13 ©
tdon) Turn-On Delay Time - 6.5 - VDD = 28V
tr Rise Time - 47 - ns ID = 6A
tum) Turn-Off Delay Time - 12 - Rs = 6.29, l/ss = 5.0V
tf Fall Time 23 RD = 4.59, See Fig. 10 (4)
Between lead, D
u, Internal Drain Inductance - 4.5 - nH 6mm (0.25in.) E )
Ls Internal Source Inductance - 7.5 - from package . G
and center of die contact© s
Ciss Input Capacitance - 265 - l/ss = 0V
Coss Output Capacitance - 80 - pF Vros = 25V
Crss Reverse Transfer Capacitance - 38 - f = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol D
(Body Diode) - - 10 A showing the
ISM Pulsed Source Current - - 40 integral reverse G
(Body Diode) (D p-n junction diode. s
Vso Diode Forward Voltage - - 1.3 V Tu = 25°C, Is = 6A, Vss = 0V ©
trr Reverse Recovery Time - 37 56 nS To = 25°C, IF = 6A
Qrr Reverse RecoveryCharge - 48 71 nC di/dt = 1OOA/ps (9
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by LS+LD)
Notes:
co Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
© Starting TJ = 25°C, L = 1.96mH
Re = 259, 1A5: 6A. (See Figure 12)
© ISD S 6.0A, di/dt S 210A/ps, VDD S V(BR)DSSv
TJs175°C
(ii) Pulse width 5 300us; duty cycle 3 2%.
s This is applied for I-PAK, Ls of D-PAK is measured between
lead and center of die contact
