IRLR014 ,60V Single N-Channel HEXFET Power MOSFET in a D-Pak packageapplications. D-PAK I-PAK
TO-252AA T0-251AA
Absolute Maximum Ratings
Parameter Max. Units
..
IRLR014N ,55V Single N-Channel HEXFET Power MOSFET in a D-Pak packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
IRLR014NTRPBF ,55V Single N-Channel HEXFET Power MOSFET in a D-Pak packageapplications. Parameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ 1 ..
IRLR014TR ,60V Single N-Channel HEXFET Power MOSFET in a D-Pak packagePD-9.624A
International
TOR Rectifier IRLR014
HEXFETOD Power MOSFET IR LU O1 4
q Dynamic ..
IRLR014TR ,60V Single N-Channel HEXFET Power MOSFET in a D-Pak packageapplications. Power dissipation levels up to 1.5 watts
are possible In typical surface mount
IRLR014TRLPBF , Power MOSFET
ISPLSI1048E-100LTN , In-System Programmable High Density PLD
ISPLSI1048E-50LT , In-System Programmable High Density PLD
ISPLSI1048E70LQ , In-System Programmable High Density PLD
ISPLSI1048E-70LQ , In-System Programmable High Density PLD
ISPLSI1048E-70LQ , In-System Programmable High Density PLD
ISPLSI1048E-70LQ , In-System Programmable High Density PLD
IRLR014-IRLR014TR
60V Single N-Channel HEXFET Power MOSFET in a D-Pak package
PD-9.624A
International
TOR Rectifier lRLF1014
HEXFETO Power MOSFET |RLUO1 4
o Dynamic dv/dt Rating
o Surface Mount (IRLRO14) D -
o Straight Lead (IRLU014) VDSS - 60V
0 Available in Tape & Reel
0 Logic-Level Gate Drive
© RDS(on) Specified at Ves=4V & 5V
0 Fast Switching
RDS(on) = 0.20n
s ID = 7.7A
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness. r-r-aa'""
. _ tistiib'
The D-Pak is designed for surface mounting using vapor phase, infrared, or r” E "sr"(i',is"iii,iiii)
wave soldering techniques. The straight lead version (IRFU series) is for
through-hole mounting applications. Power dissipation levels up to 1.5 watts 'F, 'F, 'R)iiiik,
are possible m typical surface mount applications. D-PAK I-PAK
TO-252AA TO-251AA
Absolute Maximum Ratings
Parameter Max. Units
Io @ Tc = 25°C Continuous Drain Current, Vas © 5.0 V 7.7
Io © Tc = 100°C Continuous Drain Current, Vas @ 5.0 V 4.9 A
IDM Pulsed Drain Current (i) 31
P0 © Tc = 25°C Power Dissipation 25 W
PD @ TA = 25°C Power Dissipation (PCB Mount)" 2.5
Linear Derating Factor 0.20 W PC
Linear Derating Factor (PCB Mount)" 0.020
Vss Gate-to-Source Voltage :10 _ V
EAS Single Pulse Avalanche Energy © 47 mJ
dv/dt Peak Diode Recovery dv/dt G) 4.5 V/ns
To, Tsre Junction and Storage Temperature Range -55 to +150 QC
Soldering Temperature, for 10 seconds 260 (1.6mm from case)
Thermal Resistance
Parameter Min. Typ. Max. Units
Redo Junction-to-Case - - 5.0
Rm Junction-to-Ambient (PCB mount)" - - 50 °C/W
Ra, Junction-to-Ambient - - 1 1O
** When mounted on 1" square PCB (FR-4 or G-1O Material).
For recommended footprint and soldering techniques refer to application note #AN-994.
IRLRO14, IRLUO14
Electrical Characteristics @ TU = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Test Conditions
V(anmss Drain-to-Source Breakdown Voltage 60 - - V VGs=0V, lo: 250PA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coefficient - 0.073 - VPC Reference to 25°C, ID: 1mA
RDS(on) Static Drain-to-Source On-Resistance - - 0,20 n Vos=5.OV, b---4.6A ©
- - 0.28 VGs=4.0V, |D=3.9A CO
VGS(1h) Gate Threshold Voltage 1.0 - 2.0 V VDs=VGs, ID: 250PA
Ws Fon/vard Transconductance 3.4 - - S Vos=25V, |D=4.6A ©
loss Drain-to-Source Leakage Current - - 25 WA Vtss=60V, Vas=OV
- - 250 Vos=48V, VGs=0V, TJ=125°C
less Gate-to-Source Forward Leakage - - 1 00 n A Ves=10V
Gate-to-Source Reverse Leakage - - -100 VGs=-1OV
Qg Total Gate Charge - - 8.4 |D=10A
Qgs Gate-to-Source Charge - - 3.5 " Vos=48V
di Gate-to-Drain ("Miller") Charge - - 6.0 VGS=5.0V See Fig. 6 and 13 (4)
td(on) Turn-On Delay Time - 9.3 - VDD=30V
tr Rise Time - 110 - ns 19:1 0A
tum) Turn-Off Delay Time - 17 - Rs=12n
tf Fall Time - 26 - RD=2.8§2 See Figure 10 ©
LB Internal Drain Inductance - 4.5 - (httT. ttei. ') ty
nH from package (3Q
Ls Internal Source Inductance - 7.5 - Ind center of
die contact s
Ciss Input Capacitance - 400 - Vss--0V
Coss Output Capacitance - 170 - pF Vos=25V
Crss Reverse Transfer Capacitance - 42 - f=1.0MHz See Figure 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
Is Continuous Source Current - - 7 7 MOSFET symbol D
(Body Diode) . A showing the Fir)
ISM Pulsed Source Current - - 31 integral reverse G (trl,l
(Body Diode) (l) p-n junction diode, s
Vso Diode Forward Voltage - - 1.6 V TJ=25°C, ls=7.7A, VGs=0V ©
tn Reverse Recovery Time - 65 130 ns TJ=25°C, IF=10A
er Reverse Recovery Charge - 0.33 0.65 wc di/dt=100A/ps ©
ton Forward Turn-On Time Intrinsic turn-on time is neglegible (turn-on is dominated by Ls+LD)
Notes:
C) Repetitive rating; pulse width limited by
max. junction temperature (See Figure 11)
© VDD=25V, starting TJ=25°C, L=924pH
RG=259, tAs=7.7A (See Figure 12)
TJS150°C
co ISDS1OA, di/de90/Vpts, VDDSV(BR)Dss,
(D Pulse width S 300 us; duty cycle S2%.
