IRLMS6802TRPBF ,-20V Single P-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) packagePD- 94897IRLMS6802PbFHEXFET Power MOSFET Ultra Low On-ResistanceA16D D P-Channel MOSFETV = -20V ..
IRLR014 ,60V Single N-Channel HEXFET Power MOSFET in a D-Pak packageapplications. D-PAK I-PAK
TO-252AA T0-251AA
Absolute Maximum Ratings
Parameter Max. Units
..
IRLR014N ,55V Single N-Channel HEXFET Power MOSFET in a D-Pak packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
IRLR014NTRPBF ,55V Single N-Channel HEXFET Power MOSFET in a D-Pak packageapplications. Parameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ 1 ..
IRLR014TR ,60V Single N-Channel HEXFET Power MOSFET in a D-Pak packagePD-9.624A
International
TOR Rectifier IRLR014
HEXFETOD Power MOSFET IR LU O1 4
q Dynamic ..
IRLR014TR ,60V Single N-Channel HEXFET Power MOSFET in a D-Pak packageapplications. Power dissipation levels up to 1.5 watts
are possible In typical surface mount
ISPLSI1048E-100LQN , In-System Programmable High Density PLD
ISPLSI1048E100LT , In-System Programmable High Density PLD
ISPLSI1048E-100LTN , In-System Programmable High Density PLD
ISPLSI1048E-50LT , In-System Programmable High Density PLD
ISPLSI1048E70LQ , In-System Programmable High Density PLD
ISPLSI1048E-70LQ , In-System Programmable High Density PLD
IRLMS6802TRPBF
-20V Single P-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package
PD- 94897
International
TOR Rectifier lRLMS6802PbF
HEXFET® Power MOSFET
0 Ultra Low On-Resistance
o P-Channel MOSFET DD:1 ' -6 D
0 Surface Mount J H r, VDss = -20V
0 Available in Tape & Reel Orr-'' m_l C] D
o Lead-Free
GE 4 s RDS(on) = 0.0509
Top View
Description
These P-Channel MOSFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit
provides the designer with an extremely efficient device for
use in battery and load management applications.
The MicroSTM package with its customized leadframe t,tliiiirs
produces a HEXFET© power MOSFET with RDS(on) 60% tcer,
less than a similar size SOT-23. This package is ideal for 'iii))''''
applications where printed circuit board space is at a
premium. The uniquethermal design and RDS(on) reduction
enables a current-handling increase of nearly 300%
compared to the SOT-23. Micr06TM
Absolute Maximum Ratings
Parameter Max. Units
VDS Drain- Source Voltage -20 V
ID © TA = 25°C Continuous Drain Current, Vai; @ -4.5V -5.6
ID © TA-- 70°C Continuous Drain Current, I/ss © -4.5V -4.5 A
IDM Pulsed Drain Current (D -45
PD @TA = 25°C Power Dissipation 2.0 W
PD @TA = 70°C Power Dissipation 1.3
Linear Derating Factor 0.016 W/°C
EAs Single Pulse Avalanche Energy© 31 mJ
Vss Gate-to-Source Voltage i 12 V
To, TSTG Junction and Storage Temperature Range -55 to + 150 °C
Thermal Resistance
Parameter Max. Units
ROJA Maximum Junction-to-Ambient® 62.5 °CNV
1
1/18/05
IRLMS6802PbF
International
TOR Rectifier
Electrical Characteristics © Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)Dss Drain-to-Source Breakdown Voltage -20 - - V VGs = 0V, lo = -250pA
AV(BR)DsS/ATJ Breakdown Voltage Temp. Coefficient - -0.005 - V/°C Reference to 25°C, ID = -1mA
Roam) Static Drain-to-Source On-Resistance - - 0.050 g l/ss = M.51/, ID = -5.1A ©
- - 0.100 l/ss = -2.5V, ID = -3.4A ©
VGS(th) Gate Threshold Voltage -0.60 - -1.2 V Vos = kss, ID = -250pA
gfs Forward Transconductance 1.5 - - S Vos = -1OV, ID = -0.80A
loss Drain-to-Source Leakage Current - - -1.0 pA Vros = -16V, Vss = 0V
- - -25 Vos = -16V, Vas = 0V, Tu = 125°C
less Gate-to-Source Forward Leakage - - -100 n A Vas = -12V
Gate-to-Source Reverse Leakage - - 100 VGs = 12V
% Total Gate Charge - 11 16 ID = -4.5A
Qgs Gate-to-Source Charge - 2.2 3.3 nC Vos = -10V
di Gate-to-Drain ("Miller") Charge - 2.9 4.3 Vss = -5.0V ©
td(on) Turn-On Delay Time - 12 - VDD = -10V
t, Rise Time -- 33 -- ns ID = -1.0A
tdwff) Turn-Off Delay Time - 70 - Rs = 6.09
tt Fall Time - 72 - RD = 109 ©
Ciss Input Capacitance - 1079 - VGS = 0V
Coss Output Capacitance - 220 - pF I/os = -10V
Crss Reverse Transfer Capacitance - 152 - f = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max Units Conditions
Is Continuous Source Current MOSFET symbol D
(Body Diode) - - -2.0 A showing the
ISM Pulsed Source Current - - -45 integral reverse G
(Body Diode) co p-n junction diode. S
l/so Diode Forward Voltage - - -1.2 V TJ = 25°C, Is = -1.6A, 1/ss = 0V ©
trr Reverse Recovery Time - 74 110 ns TJ = 25°C, IF = -3.0A
G, Reverse Recovery Charge - 45 67 nC di/dt = -100A/ps ©
Notes:
C) Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
C) Pulse width s: 400ps; duty cycle 3 2%.
Surface mounted on FR-4 board, ts Ssec.
Starting Tu = 25°C, L = 6.8mH
Rs = 259., MS = -3.0A. (See Figure 12)
