IRLMS6802TR ,-20V Single P-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) packagePD- 91848EIRLMS6802HEXFET Power MOSFET Ultra Low On-ResistanceA16D D P-Channel MOSFETV = -20V ..
IRLMS6802TRPBF ,-20V Single P-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) packagePD- 94897IRLMS6802PbFHEXFET Power MOSFET Ultra Low On-ResistanceA16D D P-Channel MOSFETV = -20V ..
IRLR014 ,60V Single N-Channel HEXFET Power MOSFET in a D-Pak packageapplications. D-PAK I-PAK
TO-252AA T0-251AA
Absolute Maximum Ratings
Parameter Max. Units
..
IRLR014N ,55V Single N-Channel HEXFET Power MOSFET in a D-Pak packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
IRLR014NTRPBF ,55V Single N-Channel HEXFET Power MOSFET in a D-Pak packageapplications. Parameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ 1 ..
IRLR014TR ,60V Single N-Channel HEXFET Power MOSFET in a D-Pak packagePD-9.624A
International
TOR Rectifier IRLR014
HEXFETOD Power MOSFET IR LU O1 4
q Dynamic ..
ISPLSI1048E-100LQN , In-System Programmable High Density PLD
ISPLSI1048E100LT , In-System Programmable High Density PLD
ISPLSI1048E-100LTN , In-System Programmable High Density PLD
ISPLSI1048E-50LT , In-System Programmable High Density PLD
ISPLSI1048E70LQ , In-System Programmable High Density PLD
ISPLSI1048E-70LQ , In-System Programmable High Density PLD
IRLMS6802-IRLMS6802TR
-20V Single P-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package
PD- 91848E
International
TOR Rectifier IFCMS6802
HEXFET© Power MOSFET
0 Ultra Low On-Resistance
o P-Channel MOSFET DD:1 ' -6 D
o Surface Mount J H L VDSS = -20V
0 Available in Tape & Reel DD :1! 5E] D
G[3 4 S RDS(on) = 0.0509
Top View
Description
These P-Channel MOSFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit
provides the designer with an extremely ethcient device for
use in battery and load management applications.
The Micr06TM package with its customized leadframe ..~ _
produces a HEXFET© power MOSFET with RDS(on) 60% ( 5‘s... . . "
less than a similar size SOT-23. This package is ideal for "irlii''''"
applications where printed circuit board space is at a
premium. The unique thermal design and RDS(on) reduction
enables a current-handling increase of nearly 300%
compared to the SOT-23. MicroGTM
Absolute Maximum Ratings
Parameter Max. Units
l/os Drain- Source Voltage -20 V
ID @ TA = 25°C Continuous Drain Current, VGS @ -4.5V -5.6
ID @ TA-- 70°C Continuous Drain Current, VGS @ -4.5V -4.5 A
IDM Pulsed Drain Current (D -45
PD @TA = 25°C Power Dissipation 2.0 W
PD @TA = 70°C Power Dissipation 1.3
Linear Derating Factor 0.016 W/°C
EAS Single Pulse Avalanche Energy@ 31 mJ
Ves Gate-to-Source Voltage * 12 V
TJ, TSTG Junction and Storage Temperature Range -55 to + 150 ''C
Thermal Resistance
Parameter Max. Units
ReJA Maximum Junction-to-Ambient® 62.5 °C/W
1
01/13/03
IRLMS6802
International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -20 - - V VGs = 0V, lo = -250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coemcient - -0.005 - V/°C Reference to 25°C, ID = -lmA
Roam) Static Drain-to-Source On-Resistance - - 0.050 Q VGS = M.5V, ID = -5.1A ©
- - 0.100 VGS = -2.5V, ID = -3.4A ©
VGS(th) Gate Threshold Voltage -0.60 - -1.2 V Vos = VGs, ID = -250pA
gfs Forward Transconductance 1.5 - - S Vros = -10V, ID = -0.80A
loss Drain-to-Source Leakage Current - - -1.0 pA l/rss = -16V, VGS = 0V cr
- - -25 Vos = -16V, VGs = 0V, To = 125 C
less Gate-to-Source Forward Leakage - - -100 n A VGS = -12V
Gate-to-Source Reverse Leakage - - 100 VGs = 12V
Qg Total Gate Charge - 11 16 ID = -4.5A
Qgs Gate-to-Source Charge - 2.2 3.3 nC Vos = -10V
di Gate-to-Drain ("Miller") Charge - 2.9 4.3 N/ss = -5.0V ©
tam) Turn-On Delay Time - 12 - VDD = -10V
tr Rise Time - 33 - ns ID = -1.0A
tam) Turn-Off Delay Time - 7O - Rs = 6.09
tr Fall Time - 72 - RD = lon ©
Ciss Input Capacitance - 1079 - VGs = 0V
Coss Output Capacitance - 220 - pF Vos = -10V
Crss Reverse Transfer Capacitance - 152 - f = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max Units Conditions
Is Continuous Source Current MOSFET symbol D
(Body Diode) - - -2.0 A showing the
ISM Pulsed Source Current - - -45 integral reverse e
(Body Diode) co p-n junction diode. S
l/so Diode Forward Voltage - - -1.2 v To = 25°C, Is = -1.6A, VGS = 0v ©
trr Reverse Recovery Time - 74 110 ns To = 25°C, IF = -3.0A
Qrr Reverse Recovery Charge - 45 67 nC di/dt = -100Alps ©
Notes:
C) Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
C) Pulse width 3 400ps; duty cycle 5 2%.
Surface mounted on FR-4 board, t S Ssec.
Starting Tu = 25°C, L = 6.8mH
Rs = 259, IAS = -3.0A. (See Figure 12)
