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IRLMS6702TRPBF
-20V Single P-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package
PD - 95224
International
TOR Rectifier IRLMS6702PbF
HEXFET© Power MOSFET
Generation V Technology
Micr06 Package Style DII‘ ' ' 6 D
Ultra Low RDS(on) J _ r,
P-Channel MOSFET BED (tl, 5
Lead-Free
G [3 4 S RDS(on) = 0.209
VDSS = -20V
Description
Fifth Generation HEXFET6 power MOSFETs from Top View
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance
per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that
HEXFET® power MOSFETs are well known for,
provides the designer with an extremely efficient and ffiiiiis
reliable device for use In a wide variety of applications. tc,er1,
The Micro6TM package with its customized leadframe 'iii)''''''
produces a HEXFET® power MOSFET with Rrosom
60% less than a similar size SOT-23. This package is . TM
ideal for applications where printed circuit board space Micr06
is at a premium. It's uniquethermal design and RDSWD
reduction enables a current-handling increase of
nearly 300% compared to the SOT-23.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TA = 25''C Continuous Drain Current, Vss @ -4.5V -2.4
ID @ TA = 70°C Continuous Drain Current, Ves @ -4.5V -1.9 A
IDM Pulsed Drain Current (D -13
PD @TA = 25°C Power Dissipation 1.7 W
Linear Derating Factor 13 mW/°C
Vss Gate-to-Source Voltage 1 12 V
dv/dt Peak Diode Recovery dv/dt © 5.0 V/ns
Tu,Tsrs Junction and Storage Temperature Range -55 to + 150 (
Thermal Resistance Ratings
Parameter Min. Typ. Max Units
ROUA Maximum Junction-to-Ambient © - - 75 "CIW
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IRLMS6702PbF
International
TOR Rectifier
Electrical Characteristics @ Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -20 - - V Ves = 0V, ID = -250pA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coefficient - -0.005 - V/°C Reference to 25°C, ID = -1mA
RDSWO Static Drain-to-Source On-Resistance - - 0.200 Q VGS = -4EV, ID = M.6A ©
- - 0.375 Vss = -2.7V, ID = -0.80A ©
VGS(th) Gate Threshold Voltage -0.70 - - V Vos = VGS, ID = -250PA
gfs Forward Transconductance 1.5 - - S bbs = -10V, ID = -0.80A
loss Drain-to-Source Leakage Current - - -1 .0 pA l/ns : -16V, VGS: 0V _ o
- - -25 Vos - -16V, Vcs - OV, Tu - 125 C
less Gate-to-Source Forward Leakage - - -100 nA Ves = -12V
Gate-to-Source Reverse Leakage - - 100 Ves = 12V
(Ag Total Gate Charge - 5.8 8.8 ID = -1.6A
Qgs Gate-to-Source Charge - 1.8 2.6 nC Vos = -16V
di Gate-to-Drain ("Miller") Charge - 2.1 3.1 Vcs = -4.5V, See Fig. 6 and 9 ©
tam) Turn-On Delay Time - 13 - VDD = -10V
tr Rise Time - 20 - ns ID = -1.6A
tdm) Turn-Off Delay Time - 21 - Rs = 6.09
tt FallTime - 18 - RD = 6.19, See Fig.10 ©
Ciss Input Capacitance - 210 - Ves = 0V
Coss Output Capacitance - 130 - pF Vos = -15V
Crss Reverse Transfer Capacitance - 73 - f = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol D
(Body Diode) - - M. A showing the
ISM Pulsed Source Current - - -1 3 integral reverse e
(Body Diode) OD p-n junction diode. S
VSD Diode Forward Voltage - - -1.2 V Tu = 25°C, Is = -1.6A, Vss = 0V ©
trr Reverse Recovery Time - 25 37 ns Tu = 25°C, h: = -1.6A
Qrr Reverse RecoveryCharge - 15 22 nC di/dt = -100A/ps ©
Notes:
co Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
© ISD S -1.6A, di/dt S -100/Ups, VDD S V(BR)DSS:
TJ: 150°C
6) Pulse width S 300ps; duty cycle f 2%.
© Surface mounted on FR-4 board, ts: Ssec.
