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IRLMS5703TRPBF
-30V Single P-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package
PD-94896
International
Tart, Rectifier lRLMS5703PbF
HEXFET6 Power MOSFET
Generation VTechnology
Micro6 Package Style D l . ,6 D
Ultra Low RDS(on) J r, VDSS = -30V
P-channel MOSFET sz m s
Lead-Free
GEES 4 S RDS(on) = 0.18Q
Top View
Description
Fifth Generation HEXFET® power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance
per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that
HEXFETQ power MOSFETs are well known for,
provides the designer with an extremely efficient and 1ttits
reliable device for use in a wide variety of applications. tiii,'''
The Micr06TM package with its customized leadframe
produces a HEXFETQ power MOSFET with RDS(on)
60% less than a similar size SOT-23. This package is MicroGTM
ideal for applications where printed circuit board space
is ata premium. It's uniquethermal design and RDS(on)
reduction enables a current-handling increase of
nearly 300% compared to the SOT-23.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TA = 25°C Continuous Drain Current, VGS @ -10V -2.4
In @ TA = 70°C Continuous Drain Current, VGS @- 10V -1.9 A
IDM Pulsed Drain Current © -13
PD @TA = 25''C Power Dissipation 1.7 W
Linear Derating Factor 13 mW/''C
VGs Gate-to-Source Voltage i 20 V
dv/dt Peak Diode Recovery dv/dt © 5.0 V/ns
TJITSTG Junction and Storage Temperature Range -55 to + 150 (
Thermal Resistance Ratings
Parameter Min. Typ. Max Units
ROJA Maximum Junction-to-Ambient co - - 75 "CA/V
1
1/18/05
IRLMS5703PbF
International
TOR Rectifier
Electrical Characteristics @ Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -30 - - V Ves = 0V, ID = -250pA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coefficient - 0.01 - V/°C Reference to 25°C, ID = -1mA
RDSWO Static Drain-to-Source On-Resistance - - 0.180 Q VGS = -10V, ID = M.6A ©
- - 0.325 Vss = -4.5V, ID = -0.80A G)
VGS(th) Gate Threshold Voltage -1.0 - - V Vos = VGS, ID = -250PA
gfs Forward Transconductance 1.1 - - S bbs = -10V, ID = -0.80A
loss Drain-to-Source Leakage Current - - -1 .0 pA l/ns : -24V, VGS: 0V _ o
- - -25 Vos - -24V, Vcs - 0V, Tu - 125 C
less Gate-to-Source Forward Leakage - - 100 n A Ves = -20V
Gate-to-Source Reverse Leakage - - -100 Ves = 20V
(Ag Total Gate Charge - 7.2 11 ID = -1.6A
Qgs Gate-to-Source Charge - 1.4 2.1 nC Vos = -24V
di Gate-to-Drain ("Miller") Charge - 2.3 3.4 Vcs = -10V, See Fig. 6 and 9 ©
tam) Turn-On Delay Time - 1O - VDD = -15V
tr Rise Time - 12 - ns ID = -1.6A
tdm) Turn-Off Delay Time - 20 - Rs = 6.29
tt FallTime - 8.4 - RD = 9.29, See Fig. 10 ©
Ciss Input Capacitance - 170 - Ves = 0V
Coss Output Capacitance - 89 - pF Vos = -25V
Crss Reverse Transfer Capacitance - 44 - f = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol D
(Body Diode) - - M. A showing the
ISM Pulsed Source Current - - -1 3 integral reverse G
(Body Diode) OD p-n junction diode. S
VSD Diode Forward Voltage - - -1.2 V Tu = 25°C, Is = -1.6A, Vss = 0V ©
trr Reverse Recovery Time - 29 44 ns Tu = 25°C, h: = -1.6A
Qrr Reverse RecoveryCharge - 27 41 nC di/dt = -100A/ps ©
Notes:
OD Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
© ISDS -1.6A, di/dt S -140/Vps, VDD S V(BR)nss,
Tu S150°C
C3) Pulse width S 300psi duty cycle s: 2%.
© Surface mounted on FR-4 board, ts Ssec.
