IRLMS4502TR ,-12V Single P-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) packageapplications where printed circuit board space is at apremium. It's unique thermal design and R ..
IRLMS5703 ,-30V Single P-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) packageapplications where printed circuit board spaceis at a premium. It's unique thermal design and RDS( ..
IRLMS5703TR ,-30V Single P-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) packagePD - 91413EIRLMS5703®HEXFET Power MOSFETl Generation V TechnologyA16l Micro6 Package Style DDV = -3 ..
IRLMS5703TRPBF ,-30V Single P-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) packageIRLMS5703PbF®HEXFET Power MOSFET A 16D D ..
IRLMS6702TR ,-20V Single P-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) packageIRLMS6702®HEXFET Power MOSFET A1 6DD V = -20V ..
IRLMS6702TRPBF ,-20V Single P-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) packageIRLMS6702PbF®HEXFET Power MOSFET A1 6DD V = -2 ..
ISPLSI1032E-80LT , In-System Programmable High Density PLD
ISPLSI1032E-80LTI , In-System Programmable High Density PLD
ISPLSI1032E-80LTN , In-System Programmable High Density PLD
ISPLSI1032E-90LT , In-System Programmable High Density PLD
ISPLSI1032E-90LTI , In-System Programmable High Density PLD
ISPLSI1032E-90LTN , In-System Programmable High Density PLD
IRLMS4502TR
-12V Single P-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package
PD- 937598
International
TOR Rectifier IR-MS4502
HEXFET© Power MOSFET
o Ultra Low On-Resistance
o P-Channel MOSFET DEE“ '6 D
0 Surface Mount J _ r, VDSS = -12V
0 Available in Tape & Reel DE DE C] D
GEES 4 s RDSM = 0.0429
Top View
Description
These P-Channel MOSFETs from International Rectifier
utilize advanced processing techniques to achieve the
extremely low on-resistance per silicon area. This benefit
provides the designer with an extremely efficient device for
use in battery and load management applications.. , P. V
The Micr06 package with its customized leadframe _ iii'"
produces a HEXFET power MOSFET with Rds(on) 60%
less than a similar size SOT-23. This package is ideal for
applications where printed circuit board space is at a
premium. It's uniquethermaldesign and Roam) reduction Micr06TM
enables a current-handling increase of nearly 300%
compared to the SOT-23.
Absolute Maximum Ratings
Parameter Max. Units
Vos Drain- Source Voltage -12 V
lo @ TA = 25°C Continuous Drain Current, VGs @ -4.5V -5.5
ID © TA-- 70°C Continuous Drain Current, VGS @ -4.5V -4.4 A
IDM Pulsed Drain Current C) -44
PD @TA = 25°C Power Dissipation 1.7
Po @TA = 70°C Power Dissipation 1.1 W
Linear Derating Factor 0.013 W/“C
EAs Single Pulse Avalanche Energy) 28 mJ
l/ss Gate-to-Source Voltage * 12 V
TJ, TSTG Junction and Storage Temperature Range -55 to + 150 ''C
Thermal Resistance
Parameter Max. Units
ReJA Maximum Junction-to-Ambient® 75 'C/W
1
01/13/03
IRLMS4502 International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -12 - - V VGS = 0V, ID = -250pA
AV(BR)DSSIATJ Breakdown Voltage Temp. Coemcient - -0.003 - V/°C Reference to 25''C, ID = -1mA
Roam) Static Drain-to-Source On-Resistance - - O.042 g I/ss = -4.5V, ID = -5.5A ©
- - 0075 V35 = -2.5V, ID = -4.7A C)
VGS(th) Gate Threshold Voltage -0.60 - - V Vos = VGS. ID = -250PA
gfs Fon/vard Transconductance 8.8 - - S Vos = -10V, ID = -5.5A
bss Drain-to-Source Leakage Current - - -1.0 pA I/css = -12V, VGS = 0V 0
- - -25 Vros = -9.6V, VGs = 0V, To = 125 C
less Gate-to-Source Forward Leakage - - -100 n A VGS = -12V
Gate-to-Source Reverse Leakage - - 100 VGS = 12V
% Total Gate Charge - 22 33 ID = -5.5A
Qgs Gate-to-Source Charge - 3.9 5.8 nC VDS = -10V
di Gate-to-Drain ("Miller") Charge - 11 16 VGS = -5.0V co
tam) Turn-On Delay Time - 18 - VDD = -6.0V
tr Rise Time - 460 - ns lo = -1.0A
td(off) Turn-Off Delay Time - 130 - Rs = 4.59
tt Fall Time - 250 - RD = 6.09 ©
Ciss Input Capacitance - 1820 - VGS = 0V
Coss Output Capacitance - 1110 - pF I/rss = -10V
Crss Reverse Transfer Capacitance - 1070 - f = 1.0kHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol D
(Body Diode) - - M. A showing the
ISM Pulsed Source Current - - -44 integral reverse G
(Body Diode) (D p-n junction diode. s
VSD Diode Forward Voltage - - ~12 V Tu = 25°C, Is = -1.7A, VGS = 0V ©
trr Reverse Recovery Time - 31 46 ns Tu = 25°C, IF = -5.5A
G, Reverse Recovery Charge - 21 32 nC di/dt = -100Alps ©
Notes:
co Repetitive rating; pulse width limited by co Surface mounted on FR-4 board, ts Ssec.
max. junction temperature. ( See fig. 11 )
C) Pulse width 5 400ps; duty cycle S 2%. © Starting To = 25°C, L = 1.8mH
Rs = 259. IAS = -5.5A. (See Figure 12)
2
