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IRLMS2002TRPBF
20V Single N-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package
International
TOR Rectifier
PD- 95675
lRLMS2002PbF
HEXFET® Power MOSFET
0 Ultra Low On-Resistance
o N-Channel MOSFET D l ' ,6 D
0 Surface Mount " L
0 Available in Tape & Reel r)rrj-' E 5E]:
0 2.5V Rated
0 Lead-Free GU13
Top View
VDSS = 20V
4 S RDS(on) = 0.030Q
Description
These N-Channel MOSFETs from International Rectifier
utilize advanced processing techniques to achieve the
extremely low on-resistance per silicon area. This benefit
provides the designer with an extremely efficient device for
use in battery and load management applications.
The Micro6TM package with its customized leadframe
produces a HEXFET© power MOSFET with RDS(on) 60%
less than a similar size SOT-23. This package is ideal for
applications where printed circuit board space is at a
premium. It's uniquethermaldesign and RDs(on) reduction
enables a current-handling increase of nearly 300%
compared to the SOT-23. MicroSTM
Absolute Maximum Ratings
Parameter Max. Units
VDs Drain- Source Voltage 20 V
ID © TA = 25°C Continuous Drain Current, Vai; @ 4.5V 6.5
ID © TA-- 70°C Continuous Drain Current, Vss © 4.5V 5.2 A
IDM Pulsed Drain Current (D 20
PD @TA = 25°C Power Dissipation 2.0 W
PD @TA = 70°C Power Dissipation 1.3
Linear Derating Factor 0.016 W/°C
Vss Gate-to-Source Voltage t 12 V
Tu, TSTG Junction and Storage Temperature Range -55 to + 150 ''C
Thermal Resistance
Parameter Max. Units
ROJA Maximum Junction-to-Ambient® 62.5 °CNV
1
1/18/05
IRLMS2002PbF International
TOR Rectifier
Electrical Characteristics © Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)Dss Drain-to-Source Breakdown Voltage 20 - - V VGs = 0V, ID = 250pA
AV(BR)DsS/ATJ Breakdown Voltage Temp. Coefficient - 0.016 - V/°C Reference to 25°C, ID = 1mA
Roam) Static Drain-to-Source On-Resistance - - 0.030 Q l/ss = 4.5V, ID = 6.5A co
- - 0.045 l/ss = 2.5V, ID = 5.2A ©
VGS(th) Gate Threshold Voltage 0.60 - 1.2 V Vos = Vss, lo = 250PA
gfs Forward Transconductance 13 - - S Vos = 10V, ID = 6.5A
loss Drain-to-Source Leakage Current - - 1 .0 p A Vros = 16V, Vss = 0V
- - 25 Vos = 16V, VGS = 0V, To = 70°C
less Gate-to-Source Forward Leakage - - -100 n A Vas = -12V
Gate-to-Source Reverse Leakage - - 100 VGs = 12V
% Total Gate Charge - 15 22 ID = 6.5A
Qgs Gate-to-Source Charge - 2.2 3.3 nC Vos = 10V
di Gate-to-Drain ("Miller") Charge - 3.5 5.3 Vss = 5.0V ©
Won) Turn-On Delay Time - 8.5 - VDD = 10V
t, Rise Time -- 11 -- ns ID =1.0A
tdwff) Turn-Off Delay Time - 36 - Rs = 6.09
tt Fall Time - 16 - RD =10S2 ©
Ciss Input Capacitance - 1310 - VGS = 0V
Coss Output Capacitance - 150 - pF I/os = 15V
Crss Reverse Transfer Capacitance - 36 - f = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol D
(Body Diode) - - 2.0 A showing the
ISM Pulsed Source Current - - 20 integral reverse G
(Body Diode) co p-n junction diode. s
l/so Diode Forward Voltage - - 1.2 V TJ = 25°C, Is = 1.7A, Vas = 0V ©
trr Reverse Recovery Time - 19 29 ns TJ = 25°C, IF = 1.7A
G, Reverse Recovery Charge - 13 20 nC di/dt = 1OOA/ps ©
Notes:
C) Repetitive rating; pulse width limited by © Surface mounted on FR-4 board, ts Ssec.
max. junction temperature. ( See fig. 11 )
C) Pulse width s: 400ps; duty cycle 3 2%.
2
