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IRLMS2002-IRLMS2002TR
20V Single N-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package
PD- 93758D
International
TOR Rectifier IFCMS2002
HEXFET© Power MOSFET
0 Ultra Low On-Resistance
o N-Channel MOSFET D
o Surface Mount VDSS = 20V
0 Available in Tape & Reel DE
0 2.5V Rated
GD] RDS(on) = 0.0309
Top View
Description
These N-Channel MOSFETs from International Rectifier
utilize advanced processing techniques to achieve the
extremely low on-resistance per silicon area. This benefit
provides the designer with an extremely efhcient device for
use in battery and load management applications.
The Micr06TM package with its customized leadframe
produces a HEXFET© power MOSFET with RDS(on) 60%
less than a similar size SOT-23. This package is ideal for
applications where printed circuit board space is at a
premium. It's uniquethermal design and RDs(on) reduction
enables a current-handling increase of nearly 300% .
compared to the SOT-23. Micro6TM
Absolute Maximum Ratings
Parameter Max. Units
l/os Drain- Source Voltage 20 V
In @ TA = 25°C Continuous Drain Current, VGS @ 4.5V 6.5
ID @ TA-- 70°C Continuous Drain Current, VGS @ 4.5V 5.2 A
IDM Pulsed Drain Current (D 20
PD @TA = 25°C Power Dissipation 2.0
PD @TA = 70°C Power Dissipation 1.3 W
Linear Derating Factor 0.016 W/°C
VGS Gate-to-Source Voltage * 12 V
Tu, TSTG Junction and Storage Temperature Range -55 to + 150 ''C
Thermal Resistance
Parameter Max. Units
ReJA Maximum Junction-to-Ambient® 62.5 °C/W
1
01/13/03
IRLMS2002
International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 20 - - V VGs = 0V, ID = 250pA
AV(BR)DSSIATJ Breakdown Voltage Temp. Coemcient - 0.016 - VI°C Reference to 25°C, ID = 1mA
Roam) Static Drain-to-Source On-Resistance - - 0.030 Q VGS = 4.5V, ID = 6.5A co
- - 0.045 VGS = 2.5V, ID = 5.2A ©
VGS(th) Gate Threshold Voltage 0.60 - 1.2 V Vos = VGs, ID = 250PA
gfs Forward Transconductance 13 - - S Vros = 10V, ID = 6.5A
loss Drain-to-Source Leakage Current - - 1.0 p A l/rss = 16V, VGS = 0V CF
- - 25 Vos = 16V, VGS = 0V, To = 70 C
less Gate-to-Source Forward Leakage - - -100 n A VGS = -12V
Gate-to-Source Reverse Leakage - - 100 VGs = 12V
Qg Total Gate Charge - 15 22 ID = 6.5A
Qgs Gate-to-Source Charge - 2.2 3.3 nC Vos = 10V
di Gate-to-Drain ("Miller") Charge - 3.5 5.3 N/ss = 5.0V ©
tam) Turn-On Delay Time - 8.5 - VDD = 10V
tr Rise Time - 11 - ns ID = 1.0A
tam) Turn-Off Delay Time - 36 - Rs = 6.on
tr Fall Time - 16 - RD = lon ©
Ciss Input Capacitance - 1310 - VGs = 0V
Coss Output Capacitance - 150 - pF Vos = 15V
Crss Reverse Transfer Capacitance - 36 - f = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol D
(Body Diode) - - 2.0 A showing the
ISM Pulsed Source Current - - 20 integral reverse G
(Body Diode) co p-n junction diode. s
VSD Diode Forward Voltage - - 1.2 v To = 25°C, Is = 1.7A, VGS = ov ©
trr Reverse Recovery Time - 19 29 ns To = 25°C, IF = 1.7A
Qrr Reverse Recovery Charge - 13 20 nC di/dt = 100A/ps ©
Notes:
C) Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
C) Pulse width 3 400ps; duty cycle 5 2%.
Surface mounted on FR-4 board, t S Ssec.
