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IRLMS1902TRPBF
20V Single N-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package
International
TOR Rectifier
Generation V Technology
Micr06 Package Style
Ultra Low RDS(on)
N-Channel MOSFET
Lead-Free
Description
Fifth Generation HEXFET6 power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per
silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that
HEXFET6 power MOSFETs are well known for,
provides the designer with an extremely efficient and
reliable device for use in a wide variety of applications.
The Micr06TM package with its customized leadframe
produces a HEXFET6 power MOSFET with RDS(on)
60% less than a similar size SOT-23. This package is
ideal for applications where printed circuit board space
is at a premium. It's unique thermal design and RDS(on)
reduction enables a current-handling increase of nearly
300% compared to the SOT-23.
Absolute Maximum Ratings
PD - 95359
IRLMS1902PbF
H EXFET® Power MOSFET
I ' " 6 D
DEJ L VDSS = 20V
2 E471 SDJD
GT Cs RDSW =0.10f2
Top View
Micr06TM
Parameter
Max. Units
ID @ TA = 25''C Continuous Drain Current, VGS @ 4.5V
lo @ TA = 70''C Continuous Drain Current, VGS @ 4.5V
IDM Pulsed Drain Current (D
PD @TA = 25''C PowerDissipation
LinearDerating Factor
1 3 mW/°C
I/ss Gate-to-Source Voltage
dv/dt Peak Diode Recovery dv/dt ©
5.0 V/ns
TJ, TSTG Junction and Storage Temperature Range
-55 to + 150 "C
Thermal Resistance Ratings
Parameter
Min. Typ. Max Units
' Maximum Junction-to-Ambient ©
1/18/05
IRLMS1902PbF
International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 20 - - V Ves = 0V, ID = 250pA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coefficient - 0.032 - V/°C Reference to 25°C, ID = 1mA
RDS(0n) StatiCDmin-to-SourceOn-Resistance - - 0.10 Q VGS = 4.5V, lo = 2.2A ©
-- - 0.17 VGs=2.7V,lo=1.1A©
VGsm Gate Threshold Voltage 0.70 -- - V Vos = VGs, lo = 250pA
gfs Forward Transconductance 3.2 - - s Wm = 10V, ID = 1.1A
loss Drain-to-Source LeakageCurrent - - 1.0 pA VDS: 16V, VGS I 0V - o
- - 25 Vos =16V,Vss - 0V, To - 125 C
less Gate-to-Source Forward Leakage - - 100 nA Veg = 12V
Gate-to-Source Reverse Leakage - - -100 VGS = -12V
% TotalGateCharge - 4.7 7.0 ID = 2.2A
Qgs Gate-to-Source Charge - 0.97 1.5 nC Vos = 16V
di Gate-to-Drain ("Miller")Charge - 1.8 2.6 VGS = 4.5V, See Fig. 6 and 9 ©
tum) Turn-On DelayTime - 7.0 - VDD = 10V
' Rise Time - 11 - ns ID = 2.2A
td(off) Turn-Off Delay Time - 12 - Rs = 6.09
tf FallTime - 4.0 - Ro = 4.49, See Fig. 10 ©
Ciss InputCapacitance - 300 - Veg = 0V
Cass OutputCapacitance - 120 - pF VDS = 15V
Crss Reverse TransferCapacitance - 50 - f = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol D
(Body Diode) - - 1.7 A showing the
ISM Pulsed Source Current - - 1 8 integral reverse G
(Body Diode) co p-njunction diode. s
Vso Diode Forward Voltage - - 1.2 V To = 25°C, ls = 2.2A, VGS = 0V ©
r, Reverse RecoveryTime - 40 60 ns T J = 25°C, IF = 2.2A
Q,, Reverse RecoveryCharge - 37 55 nC di/dt = 100A/ps ©
Notes:
OD Repetitive rating; pulse width limited by
max.junctiontemperature. ( See fig. 11 )
© 180:2.2A, di/dts110A/ps,VDD 5V(BR)DSS:
TJs150°c
© Pulse width I 300ps; duty cycle 3 2%.
© Surface mounted on FR-4 board, ts 5sec.
