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IRLMS1902TR
20V Single N-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package
International
TOR Rectifier
Generation V Technology
Micr06 Package Style
Ultra Low RDS(on)
N-Channel MOSFET
Description
Fifth Generation HEXFETO power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per
silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that
HEXFET© power MOSFETs are well known for,
provides the designer with an extremely efficient and
reliable device for use in a wide variety of applications.
The Micr06TM package with its customized leadframe
produces a HEXFETO power MOSFET with RDSWD
60% less than a similar size SOT-23. This package is
ideal for applications where printed circuit board space
is at a premium. It's uniquethermal design and RDS(on)
reduction enables a current-handling increase of nearly
300% compared to the SOT-23.
Absolute Maximum Ratings
PD - 91540C
|R-MS1902
HEXFET® Power MOSFET
DEJ :H
VDSS = 20V
RDS(on) = 0.109
Top View
Micr06TM
Parameter
Max. Units
ID @ TA = 25''C Continuous Drain Current, VGS @ 4.5V
lo @ TA = 70''C Continuous Drain Current, VGS @ 4.5V
IDM Pulsed Drain Current (D
PD @TA = 25''C PowerDissipation
LinearDerating Factor
1 3 mW/°C
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ©
TJ, TSTG
Junction and Storage Temperature Range
-55 to + 150
Thermal Resistance Ratings
Parameter
Maximum Junction-to-Ambient ©
3/1 8/04
IRLMS1902
International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 20 - - V Ves = 0V, ID = 250pA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coefficient - 0.032 - V/°C Reference to 25°C, ID = 1mA
RDS(0n) StatiCDmin-to-SourceOn-Resistance - - 0.10 Q VGS = 4.5V, lo = 2.2A ©
-- - 0.17 VGs=2.7V,lo=1.1A©
VGsm Gate Threshold Voltage 0.70 -- - V Vos = VGs, lo = 250pA
gfs Forward Transconductance 3.2 - - s Wm = 10V, ID = 1.1A
loss Drain-to-Source LeakageCurrent - - 1.0 pA VDS: 16V, VGS I 0V - o
- - 25 Vos =16V,Vss - 0V, To - 125 C
less Gate-to-Source Forward Leakage - - 100 nA Veg = 12V
Gate-to-Source Reverse Leakage - - -100 VGS = -12V
% TotalGateCharge - 4.7 7.0 ID = 2.2A
Qgs Gate-to-Source Charge - 0.97 1.5 nC Vos = 16V
di Gate-to-Drain ("Miller")Charge - 1.8 2.6 VGS = 4.5V, See Fig. 6 and 9 ©
tum) Turn-On DelayTime - 7.0 - VDD = 10V
' Rise Time - 11 - ns ID = 2.2A
td(off) Turn-Off Delay Time - 12 - Rs = 6.09
tf FallTime - 4.0 - Ro = 4.49, See Fig. 10 ©
Ciss InputCapacitance - 300 - Veg = 0V
Cass OutputCapacitance - 120 - pF VDS = 15V
Crss Reverse TransferCapacitance - 50 - f = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol D
(Body Diode) - - 1.7 A showing the
ISM Pulsed Source Current - - 1 8 integral reverse G
(Body Diode) co p-njunction diode. s
Vso Diode Forward Voltage - - 1.2 V To = 25°C, ls = 2.2A, VGS = 0V ©
r, Reverse RecoveryTime - 40 60 ns T J = 25°C, IF = 2.2A
Q,, Reverse RecoveryCharge - 37 55 nC di/dt = 100A/ps ©
Notes:
OD Repetitive rating; pulse width limited by
max.junctiontemperature. ( See fig. 11 )
© ISDgzzA, di/dts110A/ps,VDD 5V(BR)DSS:
TJs150°c
© Pulse width I 300ps; duty cycle 3 2%.
© Surface mounted on FR-4 board, ts 5sec.
