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IRLMS1503TRPBF
30V Single N-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package
PD - 95762
International
Tart, Rectifier IRLMS1503PbF
HEXFET© Power MOSFET
o GenerationVTechnology
o Micr06 Package Style .5 D -
. Ultra Low RDSM) L I/ross - 30V
. N-Channel MOSFET 5ED
0 Lead-Free
4 S RDS(on)=0.1OS2
Description
Fifth Generation HEXFET© power MOSFETs from Top View
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance
per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that
HEXFET® power MOSFETs are well known for,
provides the designer with an extremely efficient and ffiiiiis
reliable device for use in a wide variety of applications. _ .
The Micr06TM package with its customized leadframe J‘J/
produces a HEXFET6 power MOSFET with RDSWD
60% less than a similar size SOT-23. This package is .
ideal for applications where printed circuit board space MicroeTM
is at a premium. It's uniquethermal design and RDS(on)
reduction enables a current-handling increase of
nearly 300% compared to the SOT-23.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 3.2
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 2.6 A
IDM Pulsed Drain Current C) 18
PD @TA = 25''C Power Dissipation 1.7 W
Linear Derating Factor 13 mW/“C
VGs Gate-to-Source Voltage , 20 V
dv/dt Peak Diode Recovery dv/dt © 5.0 V/ns
TJITSTG Junction and Storage Temperature Range -55 to + 150 "C
Thermal Resistance Ratings
Parameter Min. Typ. Max Units
ReJA Maximum Junction-to-Ambient © - - 75 °CNV
1
1/14/05
|RLMS1503PbF
International
TOR Rectifier
Electrical Characteristics @ Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 30 - - V Ves = 0V, ID = 250pA
AV(BR)DSs/ATJ Breakdown Voltage Temp. Coefficient - 0.037 - V/°C Reference to 25°C, ID = 1mA
RDSWO Static Drain-to-Source On-Resistance - - 0.100 Q VGS = 10V, ID = 2.2A ©
- - 0.20 Vss = 4.5V, ID = 1.1A ©
VGS(th) Gate Threshold Voltage 1 .0 - - V Vos = Ves, ID = 250PA
gfs Forward Transconductance 1.1 - - S bbs = 10V, ID = 1.1A
loss Drain-to-Source Leakage Current - - 1.0 pA l/ns f 24V, V65: 0V _ a
- - 25 Vos - 24V, Vcs - 0V, Tu - 125 C
less Gate-to-Source Forward Leakage - - -100 nA Ves = -20V
Gate-to-Source Reverse Leakage - - 100 Ves = 20V
(Ag Total Gate Charge - 6.4 9.6 ID = 2.2A
Qgs Gate-to-Source Charge - 1.1 1.7 nC Vos = 24V
di Gate-to-Drain ("Miller") Charge - 1.9 2.8 Vcs = 10V, See Fig. 6 and 9 C3)
tam) Turn-On Delay Time - 4.6 - VDD = 15V
tr Rise Time - 4.4 - ns ID = 2.2A
tdm) Turn-Off Delay Time - 10 - Rs = 6.09
tt FallTime - 2.0 - RD = 6.79, See Fig. 10 ©
Ciss Input Capacitance - 210 - Ves = 0V
Coss Output Capacitance - 90 - pF Vos = 25V
Crss Reverse Transfer Capacitance - 32 - f = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol D
(Body Diode) - - 1.7 A showing the
ISM Pulsed Source Current - - 1 8 integral reverse G
(Body Diode) OD p-n junction diode. s
VSD Diode Forward Voltage - - 1.2 V Tu = 25''C, Is = 2.2A, Vss = 0V S)
trr Reverse Recovery Time - 36 54 ns Tu = 25°C, h: = 2.2A
Qrr Reverse RecoveryCharge - 39 58 nC di/dt = 1OOA/ps ©
Notes:
co Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
© ISD S 2.2A, di/dt S 150A/ps, VDD S V(BR)DSS,
Tu s 150°C
co Pulse width 5 300ps; duty cycle s: 2%.
© Surface mounted on FR-4 board, t S Ssec.
