IRLML9303TRPBF ,-30V Single P-Channel HEXFET Power MOSFET in a Micro3 packagePD - 97519BIRLML9303TRPbFHEXFET Power MOSFETV-30 VDSV± 20 VGS Max
IRLML9303-IRLML9303TRPBF
-30V Single P-Channel HEXFET Power MOSFET in a Micro3 package
Infernoti
IEER Rectifier
PD - 97519B
IRLML9303TRPbF
H EXFET© Power MOSFET
Vas Max
RDS(on) max
(@VGS = -101/)
165 mn
RDS(on) max
(@Vss = -4.5V)
270 mn
Micro3TM (SOT-23)
Application(s)
IRLML9303TRPbF
. System/Load Switch
Features and Benefits
Features
Industry-standard pi
Compatible with existing Surface Mount Techniques
RoHS compliant containing no lead, no bromide and no halogen
MSL1, Consumer qualification
Absolute Maximum Ratings
Benefits
Multi-vendor compatibility
results in Easier manufacturing
=r Environmentally friendly
Increased reliability
Symbol Parameter Max. Units
Vos Drain-Source Voltage -30 V
ID @ TA = 25°C Continuous Drain Current, Vas @ 10V -2.3
ID © TA = 70°C Continuous Drain Current, l/ss @ 10V -1.8 A
IDM Pulsed Drain Current -12
PD @TA = 25°C Maximum Power Dissipation 1.25 W
PD @TA = 70°C Maximum Power Dissipation 0.80
Linear Derating Factor 0.01 W/°C
Ves Gate-to-Source Voltage t 20 V
TJ, TSTG Junction and Storage Temperature Range -55 to + 150 "C
Thermal Resistance
Symbol Parameter Typ. Max. Units
ROJA Junction-to-Ambient © - 100 °C/W
ROJA Junction-to-Ambient (t<10s) © - 99
ORDERING INFORMA TION:
See detailed ordering and shipping information on the last page of this data sheet.
Notes C) through Ci) are on page 10
1
03/09/12
IRLML9303TRPbF International
TOR Rectifier
Electric Characteristics © To = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -30 - - V Ves = 0V, ID = -250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - -3.7 - mV/°C Reference to 25°C, ID = -1mA
Roswn) Static Drain-to-Source On-Resistance T, :23: :75: mf2 x: : -s-,'i'yi,-yj,j',AAf'j,,'
VGS(th) Gate Threshold Voltage -1.3 - -2.4 V Vros = Vas, ID = -10pA
loss . - - 1.0 l/rss = -24V, Vss = 0V
Drain-to-Source Leakage Current PA
-- - 150 vDS = -24v, Vss = OV, T, = 125°C
less Gate-to-Source Forward Leakage - - -100 Veg = -20V
Gate-to-Source Reverse Leakage - - 100 nA l/ss = 20V
Re Internal Gate Resistance - 21 - Q
gfs Forward Transconductance 2.3 - - S Vos = -10V, lo =-2.3A
q, Total Gate Charge - 2.0 - ID = -2.3A
Qgs Gate-to-Source Charge - 0.57 - nC Vros =-15V
di Gate-to-Drain ("Miller") Charge -- 1.2 -- l/ss = -4.5V ©
tom Turn-On Delay Time - 7.5 - VDD =-15V©
t, Rise Time - 14 - ID = -1.0A
tam) Turn-Off Delay Time - 9.0 - ns Rs = 6.89
t, Fall Time - 8.6 - Ves = -4.5V
Ciss Input Capacitance - 160 - Ves = 0V
Coss Output Capacitance - 39 - pF Vros = -25V
Crss Reverse Transfer Capacitance -- 25 -- f = 1.0KHz
Source - Drain Ratings and Characteristics
Symbol Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current _ _ -1 3 MOSFET symbol D
(Body Diode) . A showing the
ISM Pulsed Source Current - - -12 integral reverse G
(Body Diode) C) p-n junction diode. S
Vso Diode Forward Voltage - - -1.2 V T, = 25°C, ls = -1.3A, Vas = 0V ©
tn Reverse Recovery Time -- 12 18 ns T: = 25°C, l/n = -24V, IF=-1.3A
l Reverse Recovery Charge - 5.3 8.0 nC di/dt = 100A/ps ©
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