IRLML9301TRPBF ,-30V Single P-Channel HEXFET Power MOSFET in a Micro3 packagePD - 96310CIRLML9301TRPbFHEXFET Power MOSFETV -30 VDSV± 20 V G 1GS MaxRDS(on) max 64 3 DmΩ(@V = - ..
IRLML9303 ,-30V Single P-Channel HEXFET Power MOSFET in a Micro3 packageFeatures and Benefits
IRLML9303TRPBF ,-30V Single P-Channel HEXFET Power MOSFET in a Micro3 packagePD - 97519BIRLML9303TRPbFHEXFET Power MOSFETV-30 VDSV± 20 VGS Max
IRLML9301TRPBF
-30V Single P-Channel HEXFET Power MOSFET in a Micro3 package
Infernoti
IEER Rectifier
PD - 96310C
IRLML9301TRPbF
H EXFET© Power MOSFET
Vas Max
RDS(on) max
(@VGS = -10V)
RDS(on) max
(@VGS = -4.5V)
103 mn
Micro3TM (SOT-23)
Application(s)
IRLML9301TRPbF
. System/Load Switch
Features and Benefits
Features
Low RDS(on) ( S 64mf2)
Industry-standard pinout
Compatible with existing Surface Mount Techniques
RoHS compliant containing no lead, no bromide and no halogen
MSL1, Consumer qualification
Benefits
Lower switching losses
Multi-vendor compatibility
results in Easier manufacturing
=> Environmentally friendly
Increased reliability
Symbol Parameter Max. Units
Vos Drain-Source Voltage -30 V
ID @ T, = 25°C Continuous Drain Current, Vss @ 10V -3.6
ID @ T, = 70°C Continuous Drain Current, VGS @ 10V -2.9 A
IDM Pulsed Drain Current -15
PD @TA = 25°C Maximum Power Dissipation 1.3 W
Pro or, = 70°C Maximum Power Dissipation 0.8
Linear Derating Factor 0.01 W/°C
Vas Gate-to-Source Voltage * 20 V
To, TSTG Junction and Storage Temperature Range -55 to + 150 ''C
Thermal Resistance
Symbol Parameter Typ. Max. Units
ReJA Junction-to-Ambient © - 100 °C/W
ReJA Junction-to-Ambient (t<10s) © -- 99
ORDERING INFORMA TION:
See detailed ordering and shipping information on the last page of this data sheet.
Notes C) through Ci) are on page 10
1
02/09/12
|RLML9301TRPbF
International
TOR Rectifier
Electric Characteristics @ To = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
V(snmss Drain-to-Source Breakdown Voltage -30 - - V Vss = 0V, ID = -250uA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.02 - V/°C Reference to 25°C, ID = -1mA
RDSM Static Drain-to-Source On-Resistance - 51 64 mn l/ss = -10V, lo = -3.6A ©
- 82 103 I/ss = -4.5V, ID = -2.9A ©
VGS(th) Gate Threshold Voltage -1.3 - -2.4 V Vrrs = Vas, ID = -10pA
IDSS Drain-to-Source Leakage Current -- -- 1 pA Vos =-24V, Vss = 0V
- - 150 Vos = -24V, Vss = 0V, T, = 125°C
less Gate-to-Source Forward Leakage - - -100 nA Vss = -20V
Gate-to-Source Reverse Leakage - - 100 VGS = 20V
Re Internal Gate Resistance - 12 - Q
gfs Forward Transconductance 5.0 - - S Vos = -10V, ID =-3.6A
09 Total Gate Charge - 4.8 - ID = -3.6A
Qgs Gate-to-Source Charge - 1.2 - nC Vos =-15V
di Gate-to-Drain ("Miller") Charge - 2.5 - l/ss = -4.5v ©
tam) Turn-On Delay Time - 9.6 - VDD =-15V©
t, Rise Time - 19 - ID = -1A
tron Turn-Off Delay Time -- 16 -- ns Rs = 6.89
t, Fall Time - 15 - Vss = -4.5V
Ciss Input Capacitance - 388 - Vss = 0V
Coss Output Capacitance - 93 - pF Vrss = -25V
Crss Reverse Transfer Capacitance - 65 - f = 1.0KHz
Source - Drain Ratings and Characteristics
Symbol Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current _ _ -1 3 MOSFET symbol D
(Body Diode) . A showing the
ISM Pulsed Source Current - _ -15 integral reverse s
(Body Diode) (D p-n junction diode.
Vso Diode Forward Voltage - - -1.2 V Tu = 25°C, Is = -1.3A, Vss = 0V ©
tn Reverse Recovery Time - 14 21 ns TJ = 25°C, VR = -24V, |F=-1.3A
er Reverse Recovery Charge - 7.2 11 nC di/dt = 100A/ps ©
2
