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IRLML6402GTRPBF
-20V Single P-Channel Lead Free HEXFET Power MOSFET in a Halogen Free Micro3 package
International
TOR Rectifier
Ultra Low On-Resistance
PD- 96161A
IRLML6402GPbF
HEXFET® Power MOSFET
P-Channel MOSFET
SOT-23 Footprint G El:
Low Profile (<1.1mm)
Available in Tape and Reel
Fast Switching
Lead-Free S
Halogen-Free
VDSS = -20V
RDSM = 0.0659
Description
These P-Channel MOSFETs from International Rectifier utilize
advanced processing techniques to achieve extremely low on-
resistance per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that HEXFET©
power MOSFETs are well known for, provides the designer with
an extremely efficient and reliable device for use in battery and
load management.
Athermally enhanced large pad leadframe has been incorporated MicroaTM
into the standard SOT-23 package to produce a HEXFET Power
MOSFET with the industry's smallest footprint. This package,
dubbed the Micro3TM, is ideal for applications where printed
circuit board space is at a premium. The low profile (<1.1mm)
of the Micro3 allows it to fit easily into extremely thin application
environments such as portable electronics and PCMCIA cards.
The thermal resistance and power dissipation are the best
available.
Absolute Maximum Ratings
Parameter Max. Units
VDs Drain- Source Voltage -20 V
ID @ TA = 25°C Continuous Drain Current, Vss @ -4.5V -3.7
ID @ TA-- 70°C Continuous Drain Current, Vss @ -4.5V -2.2 A
IDM Pulsed Drain Current (D -22
PD @TA = 25°C Power Dissipation 1.3 W
Po @TA = 70°C Power Dissipation 0.8
Linear Derating Factor 0.01 W/°C
EAS Single Pulse Avalanche Energy) 11 mJ
Vas Gate-to-Source Voltage i 12 V
TJ,TSTG Junction and Storage Temperature Range -55 to + 150 "C
Thermal Resistance
Parameter Typ. Max. Units
ReJA Maximum Junction-to-Ambient© 75 "C/W
1
12/14/11
IRLML6402GPbF International
TOR Rectifier
Electrical Characteristics © To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -20 - - V Vas = 0V, ID = -250pA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coefficient - -0.009 - V/°C Reference to 25°C, lo = -1mA ©
Roam) Static Drain-to-Source On-Resistance - O.050 O.065 Q Vss = M.5V, ID = -3.7A ©
- 0.080 0.135 VGs = -2.5V, ID = -3.1A ©
Vesuh) Gate Threshold Voltage -O.4O -O.55 -1.2 V Vos = Vas, ID = -250pA
gfs Forward Transconductance 6.0 - - S Vos = -10V, ID = -3.7A ©
loss Drain-to-Source Leakage Current _- _- If PA x2: : Cg,' x: : g, TJ = 70°C
less Gate-to-Source Forward Leakage - - -100 n A Vas = -12V
Gate-to-Source Reverse Leakage - - 100 Vas = 12V
09 Total Gate Charge - 8.0 12 ID = -3.7A
Qgs Gate-to-Source Charge - 1.2 1.8 no Vos = -10V
di Gate-to-Drain ("Miller") Charge - 2.8 4.2 Vss = -5.0V ©
tam”) Turn-On Delay Time - 350 - VDD = -10V
t, Rise Time - 48 - ns ID = -3.7A
td(off) Turn-Off Delay Time - 588 - Rs = 899
tt Fall Time - 381 - RD = 2.79
Ciss Input Capacitance - 633 - Vas = 0V
Coss Output Capacitance - 145 - pF VDs = -10V
Crss Reverse Transfer Capacitance - 110 - f = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - _ -1 3 MOSFET symbol D
(Body Diode) . A showing the
ISM Pulsed Source Current - _ -22 integral reverse G
(Body Diode) co p-n junction diode. s
VSD Diode Forward Voltage - - -1.2 V Tu = 25°C, ls = -1.0A, Vas = 0V ©
trr Reverse Recovery Time - 29 43 ns Tu = 25°C, IF = -1.0A
0,, Reverse RecoveryCharge - 11 17 nC di/dt = -100A/ps ©
Notes:
co Repetitive rating; pulse width limited by © Surface mounted on 1" square single layer 102. copper FR4 board,
max. junction temperature. steady state.
© Pulse width 3 400ps; duty cycle f 2%. co Starting Tu = 25°c, L = 1.65mH
Rs = 259, IAS = -3.7A.
** For recommended footprint and soldering techniques refer to application note #AN-994.
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