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IRLML6401TRPBF
-12V Single P-Channel HEXFET Power MOSFET in a Micro 3 package
International
TOR Rectifier M96]
Ultra Low On-Resistance HEXFETID Power MOSFET
P-Channel MOSFET
SOT-23 Footprint
Low Profile (<1.1mm) G
Available in Tape and Reel
Fast Switching D
1.8V Gate Rated S RDS(on) = 0.059
Lead-Free
RoHS Compliant, Halogen-Free
VDSS = -12V
Description
These P-Channel MOSFETs from International Rectifier utilize advanced
processing techniques to achieve extremely low on-resistance persilicon area.
This benefit, combined with the fast switching speed and ruggedized device
design that HEXFET® power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device for use in battery and
load management.
A thermally enhanced large pad leadframe has been incorporated into the
standard SOT-23 package to produce a HEXFET Power MOSFET with the
industry's smallest footprint. This package, dubbed the MicroSTM, is ideal for
applications where printed circuit board space is ata premium. The low profile MicroSW
(<1.1mm) of the Micro allows it to fit easily into extremely thin application
environments such as portable electronics and PCMCIA cards. The thermal
resistance and power dissipation are the best available.
Standard Pack
Base Part Number Package Type Form Quantity Orderable Part Number
IRLML6401TRPbF MicroSTM (SOT-23) Tape and Reel 3000 IRLML6401TRPbF
Absolute Maximum Ratings
Parameter Max. Units
1hos Drain- Source Voltage -12 V
ID @ TA = 25°C Continuous Drain Current, Vas @ -4.5V -4.3
ID @ TA-- 70°C Continuous Drain Current, Vas @ -4.5V -3.4 A
IDM Pulsed Drain Current (D -34
PD @TA = 25°C Power Dissipation 1.3 W
PD @TA = 70°C Power Dissipation 0.8
Linear Derating Factor 0.01 W/°C
EAS Single Pulse Avalanche Energy© 33 mJ
Vas Gate-to-Source Voltage , 8.0 V
Tu,Tsrrs Junction and Storage Temperature Range -55 to + 150 ''C
Thermal Resistance
Parameter Typ. Max. Units
ROJA Maximum Junction-to-Ambient® 75 100 "CIW
il © 2014 International Rectifier Submit Datasheet Feedback April 28, 2014
1(lihR, Iitll,Nl,arttillNAp
Electrical Characteristics @ To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(Bgmss Drain-to-Source Breakdown Voltage -12 - - V l/ss = 0V, ID = -250pA
M(BmDSSIATJ Breakdown Voltage Temp. Coefficient - -0.007 - V/°C Reference to 25°C, ID = -1mA
- - 0.050 C2 Vias = -4.5V, lo = -4.3A ©
RDS(on) Static Drain-to-Source On-Resistance - - 0.085 Vias = -2.5V, ID = -2.5A ©
- - 0.125 Vss = -1.8V, ID = -2.0A ©
VGsOh) Gate Threshold Voltage -O.4O -O.55 -0.95 V VDs = Vss, ID = -250uA
gfs Forward Transconductance 8.6 - - S VDS = -1OV, ID = -4.3A
loss Drain-to-Source Leakage Current - - -1.0 pA Vos = -12V, Vas = 0V o
- - -25 Vos = -9.6V, Vas = 0V, TJ = 55 C
less Gate-to-Source Forward Leakage - - -100 nA Vss = -8.0V
Gate-to-Source Reverse Leakage - - 100 l/ss = 8.0V
% Total Gate Charge - 10 15 ID = -4.3A
Qgs Gate-to-Source Charge - 1.4 2.1 nC VDs = -10V
di Gate-to-Drain ("Miller") Charge - 2.6 3.9 VGS = -5.0V©
Won) Turn-On Delay Time - 11 - ns VDD = -6.0V
t, Rise Time - 32 - ID = -1.0A
td(ati) Turn-Off Delay Time - 250 - RD = 6.09
if Fall Time - 210 - Rs = 899 co
Ciss Input Capacitance - 830 - Vias = 0V
Coss Output Capacitance - 180 - pF VDs = -10V
Crss Reverse Transfer Capacitance - 125 - f = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - _ -1 3 MOSFET symbol D
(Body Diode) . A showing the
ISM Pulsed Source Current - _ -34 integral reverse G
(Body Diode) co p-n junction diode. s
VSD Diode Forward Voltage - - -1.2 V Tu = 25°C, ls = -1.3A, Vas = 0V ©
trr Reverse Recovery Time - 22 33 ns Tu = 25°C, IF = -1.3A
Qrr Reverse RecoveryCharge - 8.0 12 nC di/dt = -100A/ps ©
Notes:
co Repetitive rating; pulse width limited by © Surface mounted on 1" square single layer 102. copper FR4 board,
max. junction temperature. steady state.
© Pulse width S 300ps; duty cycle S 2%. co Starting Tu = 25°C, L = 3.5mH
Rs = 259, IAS = -4.3A.
© 2014 International Rectifier Submit Datasheet Feedback April 28, 2014
