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IRLML6401GTRPBF
-12V Single P-Channel Lead Free HEXFET Power MOSFET in a Halogen Free Micro3 package
PD - 96160
IRLML640'IGPbF
HEXFET® Power MOSFET
International
Tait Rectifier
0 Ultra Low On-Resistance
o P-Channel MOSFET
o SOT-23 Footprint G
q Low Profile (<1.1mm) VDss = -12V
0 Available in Tape and Reel D
Fast Switching RDS = 0059
1.8V Gate Rated S (on)
Lead-Free
Halogen-Free
Description
These P-Channel MOSFETs from International Rectifier
utilize advanced processing techniques to achieve extremely
low on-resistance per silicon area. This benefit, combined
with the fast switching speed and ruggedized device design
that H EXFET© power MOSFETs are well known for, provides
the designer with an extremely efficient and reliable device
for use in battery and load management.
A thermally enhanced large pad leadframe has been Micro3
incorporated into the standard SOT-23 package to produce
a HEXFET Power MOSFET with the industry's smallest
footprint. This package, dubbed the Micro3TM, is ideal for
applications where printed circuit board space is at a
premium. The low profile (<1.1mm) of the Micr03 allows it
to fit easily into extremely thin application environments
such as portable electronics and PCMCIA cards. The thermal
resistance and power dissipation are the best available.
Absolute Maximum Ratings
Parameter Max. Units
VDS Drain- Source Voltage -12 V
ID @ TA = 25°C Continuous Drain Current, VGS @ -4.5V -4.3
ID @ TA-- 70°C Continuous Drain Current, VGS @ -4.5V -3.4 A
IDM Pulsed Drain Current co -34
PD @TA = 25°C Power Dissipation 1.3 W
PD @TA = 70°C Power Dissipation 0.8
Linear Derating Factor 0.01 W/°C
EAS Single Pulse Avalanche Energy© 33 mJ
Ves Gate-to-Source Voltage t 8.0 V
To,Tsrrs Junction and Storage Temperature Range -55 to + 150 °C
Thermal Resistance
Parameter Typ. Max. Units
ReJA Maximum Junction-to-Ambient® 75 100 "C/W
1
07/22/08
IRLML6401GPbF
International
TOR Rectifier
Electrical Characteristics @ To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(Bgmss Drain-to-Source Breakdown Voltage -12 - - V l/ss = 0V, ID = -250pA
AV
- - 0.050 Q Vias = -4.5V, lo = -4.3A ©
RDS(on) Static Drain-to-Source On-Resistance - - 0.085 Vias = -2.5V, ID = -2.5A ©
- - 0.125 Vss = -1.8V, ID = -2.0A ©
VGsOh) Gate Threshold Voltage -O.4O -O.55 -0.95 V VDs = Vss, ID = -250uA
gfs Forward Transconductance 8.6 - - S VDS = -1OV, ID = -4.3A
loss Drain-to-Source Leakage Current - - -1.0 pA Vos = -12V, Vas = 0V o
- - -25 Vos = -9.6V, Vas = 0V, TJ = 55 C
less Gate-to-Source Forward Leakage - - -100 nA Vss = -8.0V
Gate-to-Source Reverse Leakage - - 100 l/ss = 8.0V
% Total Gate Charge - 10 15 ID = -4.3A
Qgs Gate-to-Source Charge - 1.4 2.1 nC VDs = -10V
di Gate-to-Drain ("Miller") Charge - 2.6 3.9 VGS = -5.0V©
Won) Turn-On Delay Time - 11 - ns VDD = -6.0V
t, Rise Time - 32 - ID = -1.0A
td(ati) Turn-Off Delay Time - 250 - RD = 6.09
if Fall Time - 210 - Rs = 899 co
Ciss Input Capacitance - 830 - Vias = 0V
Coss Output Capacitance - 180 - pF VDs = -10V
Crss Reverse Transfer Capacitance - 125 - f = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - _ -1 3 MOSFET symbol D
(Body Diode) . A showing the
ISM Pulsed Source Current - _ -34 integral reverse G
(Body Diode) co p-n junction diode. s
VSD Diode Forward Voltage - - -1.2 V Tu = 25°C, ls = -1.3A, Vas = 0V ©
trr Reverse Recovery Time - 22 33 ns Tu = 25°C, IF = -1.3A
Qrr Reverse RecoveryCharge - 8.0 12 nC di/dt = -100A/ps ©
Notes:
co Repetitive rating; pulse width limited by
max. junction temperature.
© Pulse width 3 300ps; duty cycle S 2%.
Rs = 259, IAS = -4.3A.
© Surface mounted on 1" square single layer 102. copper FR4 board,
steady state.
co Starting Tu = 25°C, L = 3.5mH
