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IRLML6401-IRLML6401 TR-IRLML6401PBF-IRLML6401TR
-12V Single P-Channel HEXFET Power MOSFET in a Micro 3 package
PD - 93756D
IRLML6401
HEXFET® Power MOSFET
International
Tait Rectifier
0 Ultra Low On-Resistance
o P-Channel MOSFET
o SOT-23 Footprint
o Low Profile (<1.1mm) VDSS = -12V
Available in Tape and Reel D
Fast Switching =
1.8V Gate Rated s RDS(on) 0.05Q
Description
These P-Channel MOSFETs from International Rectifier
utilize advanced processing techniques to achieve extremely
low on-resistance per silicon area. This benefit, combined
with the fast switching speed and ruggedized device design
that HEXFET© power MOSFETs are well known for, provides
the designer with an extremely efMient and reliable device
for use in battery and load management.
A thermally enhanced large pad leadframe has been
incorporated into the standard SOT-23 package to produce
a HEXFET Power MOSFET with the industry's smallest MicrosTM
footprint. This package, dubbed the MicroSTM, is ideal for
applications where printed circuit board space is at a
premium. The low profile (<1.1mm) of the Micro3 allows it
to fit easily into extremely thin application environments
such as portable electronics and PCMCIA cards. The thermal
resistance and power dissipation are the best available.
Absolute Maximum Ratings
Parameter Max. Units
Vros Drain- Source Voltage -12 V
ID @ TA = 25°C Continuous Drain Current, Ves @ -4.5V -4.3
ID @ TA-- 70''C Continuous Drain Current, Vss @ -4.5V -3.4 A
IDM Pulsed Drain Current (D -34
PD @TA = 25°C Power Dissipation 1.3 W
Po @TA = 70°C Power Dissipation 0.8
Linear Derating Factor 0.01 Wl°C
EAs Single Pulse Avalanche Energy© 33 ml
VGS Gate-to-Source Voltage l 8.0 V
TJ,TSTG Junction and Storage Temperature Range -55 to + 150 ''C
Thermal Resistance
Parameter Typ. Max. Units
RQJA Maximum Junction-to-Ambient© 75 100 "C/W
1
04/29/03
IRLML6401
International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BRpss Drain-to-Source Breakdown Voltage -12 - - V VGS = 0V, ID = -250PA
AV
- - 0.050 Q VGs = -4.5V, ID = -4.3A ©
Roam) Static Drain-to-Source On-Resistance - - 0.085 Vss = -2.5V, ID = -2.5A ©
- - 0.125 N/ss = -1.8V, ID = -2.0A ©
Vegan) Gate Threshold Voltage -0.40 -0.55 -0.95 V Vros = VGs, ID = -250pA
git Forward Transconductance 8.6 - - S VDS = -10V, ID = -4.3A
loss Drain-to-Source Leakage Current - - -1.0 pA Vos i -12V, VGS It,/ - o
- - -25 Vos - -9.6V, VGS - 0V, TJ - 55 C
less Gate-to-Source Forward Leakage - - -100 nA VGS = -8.0V
Gate-to-Source Reverse Leakage - - 100 VGS = 8.0V
09 Total Gate Charge - 10 15 lo = -4.3A
Qgs Gate-to-Source Charge - 1.4 2.1 nC Vros = -10V
di Gate-to-Drain ("Miller") Charge - 2.6 3.9 VGS = -5.0V©
td(on) Turn-On Delay Time - 11 - ns VDD = -6.0V
tr Rise Time - 32 - ID = -1.0A
td(off) Turn-Off Delay Time - 250 - Ro = 6.09
tr Fall Time - 210 - Rs = 899 co
Ciss Input Capacitance - 830 - VGs = 0V
Coss Output Capacitance - 180 - pF VDs = -10V
Crss Reverse Transfer Capacitance - 125 - f = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - -1 3 MOSFET symbol D
(Body Diode) . A showing the
ISM Pulsed Source Current - _ -34 integral reverse G
(Body Diode) co p-n junction diode. s
VSD Diode Forward Voltage - - -1.2 V TJ = 25°C, ls = -1.3A, VGS = 0V ©
trr Reverse Recovery Time - 22 33 ns TJ = 25°C, IF = -1.3A
Qrr Reverse RecoveryCharge - 8.0 12 nC di/dt = -100/Ups ©
Notes:
co Repetitive rating; pulse width limited by
max. junction temperature.
© Pulse width S 300ps; duty cycle 3 2%.
Rs = 259, IAS = -4.3A.
© Surface mounted on 1" square single layer 102. copper FR4 board,
steady state.
© Starting Tu = 25°C, L = 3.5mH
