IRLML6346TRPBF ,30V Single N-Channel HEXFET Power MOSFET in a Micro 3 packagePD - 97584AIRLML6346TRPbFHEXFET Power MOSFETV30 VDS
IRLML6346TRPBF
30V Single N-Channel HEXFET Power MOSFET in a Micro 3 package
International
TOR Rectifier
PD - 97584A
IRLML6346TRPbF
H EXFET© Power MOSFET
Vas Max
RDS(on) max
(@ Vss = 4.5V)
RDS(on) max
(@ l/ss = 2.5V)
Micro3TM (SOT-23)
IRLML6346TRPbF
Application(s)
. Load/ System Switch
Features and Benefits
Features
Industry-standard SOT-23 Package
RoHS compliant containing no lead, no bromide and no halogen
MSL1, Consumer Qualification
Absolute Maximum Ratings
Benefits
results in
Multi-vendor compatibility
c) Environmentally friendly
Increased Reliability
Symbol Parameter Max. Units
Vos Drain-Source Voltage 30 V
In @ T, = 25°C Continuous Drain Current, Ves @ 10V 3.4
ID @ TA = 70°C Continuous Drain Current, Vas @ 10V 2.7 A
IDM Pulsed Drain Current 17
Pro @TA = 25°C Maximum Power Dissipation 1.3 W
PD @TA = 70°C Maximum Power Dissipation 0.8
Linear Derating Factor 0.01 W/°C
l/ss Gate-to-Source Voltage i 12 V
Tv, TSTG Junction and Storage Temperature Range -55 to + 150 ''C
Thermal Resistance
Symbol Parameter Typ. Max. Units
ROJA Junction-to-Ambient G) - 100 °CNV
ROJA Junction-to-Ambient (t<10s) © - 99
ORDERING INFORMATION:
See detailed ordering and shipping information on the last page of this data sheet.
Notes co through © are on page 10
1
03/09/12
IRLML6346TRPbF
International
TOR Rectifier
Electric Characteristics @ To = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
V(BR)Dss Drain-to-Source Breakdown Voltage 30 - - V Ves = 0V, ID = 250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.02 - V/°C Reference to 25°C, ID = 1mA
. . . -- 46 63 Vss = 4.5V, ID = 3.4A ©
RDSM Static Drain-to-Source On-Resistance mf2
- 59 80 l/ss = 2.5V, ID = 2.7A ©
VGS(th) Gate Threshold Voltage 0.5 0.8 1.1 V Vos = Vas, ID = 10pA
bss Drain-to-Source Leakage Current - - 1.0 pA Vos =24V, Vss = 0V
- - 150 l/rss = 24V, l/ss = OV, T, = 125°C
less Gate-to-Source Forward Leakage - - 100 nA Vss = 12V
Gate-to-Source Reverse Leakage - - -100 l/ss = -12V
Re Internal Gate Resistance - 3.9 - Q
gfs Forward Transconductance 9.5 - - S Vos = 10V, b = 3.4A
q, Total Gate Charge - 2.9 - ID = 3.4A
Qgs Gate-to-Source Charge - 0.13 - nC Vos =15V
di Gate-to-Drain ("Miller") Charge - 1.1 - Ves = 4.5V ©
td(on) Turn-On Delay Time - 3.3 - VDD =15V©
t, Rise Time - 4.0 - ID = 1.0A
tam) Turn-Off Delay Time -- 12 -- ns Rs = 6.89
t, Fall Time - 4.9 - l/ss = 4.5V
Ciss Input Capacitance - 270 - Vss = 0V
Cass Output Capacitance - 32 - pF Vos = 24V
Crss Reverse Transfer Capacitance -- 21 - f = 1.0MHz
Source - Drain Ratings and Characteristics
Symbol Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - _ 1 3 MOSFET symbol D
(Body Diode) . A showing the
ISM Pulsed Source Current - _ 17 integral reverse G
(Body Diode) CD p-n junction diode. S
Vso Diode Forward Voltage - - 1.2 V T: = 25°C, ls = 3.4A, Vss = 0V ©
tn Reverse Recovery Time - 8.8 13 ns T, = 25°C, VF. = 24V, |F=1.3A
a,, Reverse Recovery Charge - 2.7 4.1 nC di/dt = 100/Vps ©
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