IRLML6344TRPBF ,30V Single N-Channel HEXFET Power MOSFET in a Micro 3 package HEXFET Power MOSFETV 30 VDSG 1V ± 12 VGS MaxRDS(on) max 3 D29mΩ(@V = 4.5V)GSTM2 SMic ..
IRLML6346TRPBF ,30V Single N-Channel HEXFET Power MOSFET in a Micro 3 packagePD - 97584AIRLML6346TRPbFHEXFET Power MOSFETV30 VDS
IRLML6344TRPBF
30V Single N-Channel HEXFET Power MOSFET in a Micro 3 package
International
Tatt. Rectifier
[lNl,lhll,fdhCtrIlNNld,
V03 30 V
Vas Max 1 12 V
RDS(on) max
RDS(on) max
(@Vss = 2.5V) 37 mn
Application(s)
q Load/ System Switch
Features and Benefits
HEXFET@ Power MOSFET
Micro3TM (SOT-23)
IRLML6344TRPbF
Low RDSon (<29mQ)
Industry-standard SOT-23 Package
RoHS compliant containing no lead, no bromide and no halogen
results in
MSL1, Consumer Qualification
Benefits
Lower Conduction Losses
Multi-vendor compatibility
Environmentally friendly
Increased Reliability
Base Part Number Package Type Foritandard Paguantity Orderable Part Number
IRLML6344TRPbF MicroSTM(SOT-23) Tape and Reel 3000 IRLML6344TRPbF
Absolute Maximum Ratings
Symbol Parameter Max. Units
VDS Drain-Source Voltage 30 V
ID @ T, = 25°C Continuous Drain Current, Vas @ 10V 5.0
ID @ T, = 70°C Continuous Drain Current, Vas @ 10V 4.0 A
IDM Pulsed Drain Current 25
Po @TA = 25°C Maximum Power Dissipation 1.3 W
PD OT, = 70°C Maximum Power Dissipation 0.8
Linear Derating Factor 0.01 W/°C
Vas Gate-to-Source Voltage i 12 V
TJ,TSTG Junction and Storage Temperature Range -55 to + 150 °C
Thermal Resistance
Symbol Parameter Typ. Max. Units
ReJA Junction-to-Ambient OD - 100
ReJA Junction-to-Ambient (t<10s) © - 99 "C/W
ORDERING INFORMATION:
See detailed ordering and shipping information on the last page of this data sheet.
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December 19, 2014
I‘SZ’R
|RLML6844TRPbF
Electric Characteristics tii) T J = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
V(Bmss Drain-to-Source Breakdown Voltage 30 - - V l/ss = 0V, ID = 250PA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.02 - V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance - 22 29 mn Vss = 4.5V, ID = 5.OA ©
- 27 37 vGS = 2.5V, ID = 4.0A ©
Vesm) Gate Threshold Voltage 0.5 0.8 1.1 V VDS = Vas, ID = 10pA
IDSS Drain-to-Source Leakage Current - - 1.0 pA Vos =24V, Vss = 0V
- - 150 Vos = 24v, l/ss = ov, T: = 125°C
less Gate-to-Source Forward Leakage - - 100 nA l/ss = 12V
Gate-to-Source Reverse Leakage - - -100 Vss = -12V
Rs Internal Gate Resistance - 1.7 - n
gfs Forward Transconductance 19 - - S VDS = 10V, ID = 5.0A
Q, Total Gate Charge - 6.8 - ID = 5.0A
Qgs Gate-to-Source Charge - 0.3 - nC Vos =15V
di Gate-to-Drain ("Miller") Charge - 2.4 - l/ss = 4.5V C)
tum) Turn-On Delay Time - 4.2 - l/oo =15V©
t, Rise Time - 5.6 -- ns ID = 1.0A
td(off) Turn-Off Delay Time - 22 - Rs = 6.89
tf Fall Time - 9.1 - I/ss = 4.5V
Ciss Input Capacitance - 650 - Ves = 0V
Cass Output Capacitance - 65 - PF Vos = 25V
Crss Reverse Transfer Capacitance - 46 - f = 1.0MHz
Source - Drain Ratings and Characteristics
Symbol Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - 1.3 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - _ 25 integral reverse s
(Body Diode) C) p-n junction diode.
l/so Diode Forward Voltage - - 1.2 V T, = 25°C, ls = 5.0A, Ves = 0V ©
tr, Reverse Recovery Time - IO 15 ns T, = 25°C, l/n = 15V, |F=1.3A
Qrr Reverse Recovery Charge - 3.8 5.7 nC di/dt = 1OOA/ps ©
Notes (D through 6) are on page 10
© 2014 International Rectifier
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December 19, 2014
