IRLML6302 ,-20V Single P-Channel HEXFET Power MOSFET in a Micro 3 package
IRLML6302 ,-20V Single P-Channel HEXFET Power MOSFET in a Micro 3 package
IRLML6344TRPBF ,30V Single N-Channel HEXFET Power MOSFET in a Micro 3 package HEXFET Power MOSFETV 30 VDSG 1V ± 12 VGS MaxRDS(on) max 3 D29mΩ(@V = 4.5V)GSTM2 SMic ..
IRLML6346TRPBF ,30V Single N-Channel HEXFET Power MOSFET in a Micro 3 packagePD - 97584AIRLML6346TRPbFHEXFET Power MOSFETV30 VDS
IRLML6302
-20V Single P-Channel HEXFET Power MOSFET in a Micro 3 package
. PD - 91259G
International
TOR Rectifier IRLML6302
HEXFET© Power MOSFET
q Generation V Technology
q Ultra Low On-Resistance
. P-Channel MOSFET G E I/ross = -20V
q SOT-23 Footprint
. Low Profile (<1.1mm) D
q Available in Tape and Reel R = 0.609
q Fast Switching S DS(on)
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designerwith an extremely efficient
and reliable device for use in a wide variety of applications.
A customized leadframe has been incorporated into the MicroSTM
standard SOT-23 package to produce a HEXFET Power
MOSFET with the industry's smallest footprint. This
package, dubbed the Micro3, is ideal for applications
where printed circuit board space is at a premium. The low
profile (<1.1mm) of the Micro3 allows it to fit easily into
extremely thin application environments such as portable
electronics and PCMCIA cards.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TA = 25°C Continuous Drain Current, VGs @ -4.5V -O.78
ID @ TA = 70°C Continuous Drain Current, VGS @ -4.5V -0.62 A
IDM Pulsed Drain Current (D -4.9
PD@TA = 25°C Power Dissipation 540 mW
Linear Derating Factor 4.3 mW/'C
Vas Gate-to-Source Voltage 1 12 V
dv/dt Peak Diode Recovery dv/dt © -5.0 V/ns
TJITSTG Junction and Storage Temperature Range -55 to + 150 'C
Thermal Resistance
Parameter Typ. Max. Units
Ram Maximum Junction-to-Ambient BD - 230 "CMI I
1
12/14/11
IRLML6302
International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -20 - - V l/tss = 0V, ID = -250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - -4.9 - mV/°C Reference to 25°C, ID = -1mA
. . . - - 0.60 Vss = -4.5V, ID = -0.61A ©
RDS(ON) Static Drain-to-Source On-Resistance - - 0.90 n Vss = -2.7V, '0 = -0BI A ©
Vssim) Gate Threshold Voltage -O.70 - -1.5 V VDs = VGs, ID = -250pA
gfs Forward Transconductance 0.56 - - S VDs = -10V, ID = -0.31A
loss Drain-to-Source Leakage Current - - -1.0 pA Vrvs = -16V, VGS = 0V
- - -25 Vros = -16V, VGs = 0V, Tu = 125°C
less Gate-to-Source Forward Leakage - - -100 nA Vss = -12V
Gate-to-Source Reverse Leakage - - 100 l/ss = 12V
% Total Gate Charge - 2.4 3.6 ID = -0.61A
Qgs Gate-to-Source Charge - 0.56 0.84 nC VDs = -16V
di Gate-to-Drain ("Miller") Charge - 1.0 1.5 Vss = -4.5V, See Fig. 6 and 9 ©
td(on) Turn-On Delay Time - 13 - VDD = -10V
tr Rise Time - 18 - ID = -0.61A
tdm Turn-Off Delay Time - 22 - ns R9 = 6.29
tt FaIITime - 22 - RD =16f2,See Fig. 10 ©
Ciss Input Capacitance - 97 - l/ss = 0V
Cass Output Capacitance - 53 - l pF VDs = -15V
Crss Reverse Transfer Capacitance - 28 - l f = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current MOSFET symbol D
. - - -O.54 _
(Body Diode) A showmg the
ISM Pulsed Source Current - - -4.9 - integral reverse G
(Body Diode) (D . p-n junction diode. s
Vso Diode Forward Voltage - - -1.2 V To = 25°C, Is = -0.61A, Vss = 0V ©
trr Reverse Recovery Time - 35 53 ns To = 25°C, I; = -0.61A
Qrr Reverse RecoveryCharge - 26 39 nC di/dt = 100A/ps ©
Notes:
(O Repetitive rating; pulse width limited by (3 Pulse width s: 300ps; duty cycle f 2%.
max. junction temperature. ( See fig. 11 )
© Isro S -0.61A, di/dt s 76A/ps, VDD s V(BR)DSS: 60 Surface mounted on FR-4 board, ts Ssec.
Tu f 150°C
