IRLML6246TRPBF ,20V Single N-Channel HEXFET Power MOSFET in a Micro 3 packagePD - 97529AIRLML6246TRPbFHEXFET Power MOSFETV 20 VDSG 1V ± 12 VGS MaxRDS(on) max 3 D46 m
IRLML6246TRPBF
20V Single N-Channel HEXFET Power MOSFET in a Micro 3 package
International
TOR Rectifier
PD - 97529A
IRLML6246TRPbF
H EXFET© Power MOSFET
Vos 20 V
Vas Max i 12 V G
RDS(on) max
46 m9 3 D
(@VGS = 4.5V)
RDS(on) max 66 m9 s Micro3TM (SOT-23)
(@Ves = 2.5V) IRLML6246TRPbF
Application(s)
. Load/ System Switch
Features and Benefits
Features Benefits
Industry-standard SOT-23 Package Multi-vendor compatibility
RoHS compliant containing no lead, no bromide and no halogen results in Environmentally friendly
Absolute Maximum Ratings
Symbol Parameter Max. Units
Vos Drain-Source Voltage 20 V
ID @ T, = 25°C Continuous Drain Current, Vss @ 10V 4.1
ID @ T, = 70°C Continuous Drain Current, Vas @ 10V 3.3 A
IDM Pulsed Drain Current 16
PD @TA = 25°C Maximum Power Dissipation 1.3 W
PD @TA = 70°C Maximum Power Dissipation 0.8
Linear Derating Factor 0.01 W/°C
Vss Gate-to-Source Voltage i 12 v
T J, TSTG Junction and Storage Temperature Range -55 to + 150 °C
Thermal Resistance
Symbol Parameter Typ. Max. Units
Rasa Junction-to-Ambient © - 100 °CNV
Ram Junction-to-Ambient (t<10s) © - 99
ORDERING INFORMA TION:
See detailed ordering and shipping information on the last page of this data sheet.
Notes co through © are on page 10
1
10/1 2/12
IRLML6246TRPbF
International
TOR Rectifier
Electric Characteristics @ T, = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 20 - - V Vas = 0V, ID = 250PA
AVmmzss/ATu Breakdown Voltage Temp. Coefficient - 0.03 - V/°C Reference to 25°C, ID = 1mA
Roswn) Static Drain-to-Source On-Resistance - 30 46 m9 Vas = 4.5V, ID = 4.IA g)
- 45 66 Vos = 2.5V, ID = 3.3A <2)
Vegan) Gate Threshold Voltage 0.5 0.8 1.1 V VDS = Vos, ID = 5pA
loss - - 1.0 Vos =16V, 1/ss = OV
Drain-to-Source Leakage Current - - 10 HA Vos = 16V, vGS = 0V, To = 55°C
- - 150 Vos =16V,VGS = 0V, To = 125°C
less Gate-to-Source Forward Leakage - - 100 n A Vas = 12V
Gate-to-Source Reverse Leakage - - -100 Vas = -12V
Ro Internal Gate Resistance - 4.0 - Q
gfs Forward Transconductance 10 - - S Vos = 10V, ID = 4.1A
Q, Total Gate Charge - 3.5 - ID = 4.1A
Qus Gate-to-Source Charge - 0.26 - nC Vos =10V
qu Gate-to-Drain ("Milled') Charge - 1.7 - Vas = 4.5V (2)
tdmn, Tum-On Delay Time - 3.6 - Va, =10V2)
t, Rise Time - 4.9 - ns ID = 1.0A
taro") Tum-Off Delay Time - 11 - Ra = 6.89
t, Fall Time -- 6.0 - Vos = 4.5V
Ciss Input Capacitance - 290 - Vos = 0V
Coss Output Capacitance - 64 - PF Vos = 16V
Crss Reverse Transfer Capacitance - 41 - f = 1.0MHz
Source - Drain Ratings and Characteristics
Symbol Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 1.3 MOSFET symbol D
(Body Diode) A showing the G
ISM Pulsed Source Current - - 16 integral reverse s
(Body Diode) Cf) p-n junction diode.
VSD Diode Forward Voltage -- - 1.2 V Tu = 25°C, Is = 4.1A, Vos = 0V <2)
tr, Reverse Recovery Time - 8.6 13 ns Tu = 25°C, Vs, = 15V, IF=1.3A
Q,, Reverse Recovery Charge - 2.8 4.2 nC di/dt = 100A/ps (2)
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